The United States of America As Represented by the National Security Agency

The United States of America As Represented by the National Security

John J Hudak

Pramod Chintaman Karulkar

Thomas R Neal

A method of thinning a non-SOI device using an SOI thinning process that includes the steps of receiving an SOI starting wafer, where the SOI starting wafer includes a silicon substrate and an oxide layer thereon; selecting a non-SOI fabrication process for fabricating the non-SOI device; forming a layer of device quality silicon on the oxide layer of the SOI starting wafer to a sufficient thickness and doping profile to realize the non-SOI device; fabricating the non-SOI device in the device quality silicon layer using the non-SOI fabrication process selected; forming a support layer on the device quality silicon layer having the non-SOI device fabricated therein; and thinning the result of the last step using the SOI thinning process.

Method of fabricating a non-SOI device on an SOI starting wafer and thinning the same

A precision linear tuning circuit having particular utility to applications employing superconductors in a supercooled environment. Two capacitors, one fixed and one variable, are connected in parallel by an arrangement of shared, concentric electrodes. The variable capacitor includes one electrode and a movable facing dielectric which are tapered such that displacement of the dielectric results in a linear variation in tuning frequency.

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Columbia, MD, United States of America

John J Hudak