Freescale Semiconductor,inc.

John J Hackenberg

Suresh Venkatesan

Leo Mathew

Tab Allen Stephens

Vishal P Trivedi

Paul Grudowski

Rode R Mora

Toni D Van Gompel

Ross Edward Noble

David C Sing

Jill C Hildreth

Daniel G Tekleab

Hunter J Martinez

Darren V Goedekc

A method for making a transistor is provided which comprises (a) providing a semiconductor structure having a gate () overlying a semiconductor layer (), and having at least one spacer structure () disposed adjacent to said gate; (b) removing a portion of the semiconductor structure adjacent to the spacer structure, thereby exposing a portion () of the semiconductor structure which underlies the spacer structure; and (c) subjecting the exposed portion of the semiconductor structure to an angled implant ().

Method to improve source/drain parasitics in vertical devices

A method of forming a semiconductor layer, which in one embodiment is part of a photodetector, includes forming a silicon shape, applying ozonated water, removing the first oxide layer at a temperature below 600 degrees Celsius, and epitaxially growing germanium. The silicon shape has a top surface that is exposed. The ozonated water is applied to the top surface and causes formation of a first oxide layer on the top surface. The germanium is grown on the top surface.

Method of forming a semiconductor layer

A method for forming a semiconductor isolation trench includes forming a pad oxide layer over a substrate and forming a barrier layer over the substrate. A masking layer is formed over the barrier layer and is patterned to form at least one opening in the masking layer. At least a part of the barrier layer and at least a part of the pad oxide layer are etched through the at least one opening resulting in a trench pad oxide layer. Etching of the trench pad oxide layer stops substantially at a top surface of the substrate within the isolation trench. An oxide layer is grown by diffusion on at least the top surface of the substrate corresponding to the at least one isolation trench. The method further includes etching the oxide layer and at least a portion of the substrate to form at least one isolation trench opening.

Method of forming a semiconductor isolation trench

A method is provided for making a semiconductor device. In accordance with the method, a substrate () is provided which has first () and second () gate structures thereon. A first stressor layer () is formed over the substrate, and a sacrificial layer () is formed over the first stressor layer. A second stressor layer () is formed over the sacrificial layer.

Stressor integration and method thereof

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Austin, TX, United States of America

John J Hackenberg