International Business Machines Corporation

Globalfoundries U.S. Inc.

Globalfoundries Inc.

Eastman-kodak Company

Omnivision Technologies, Inc.

Globalfoundries U.S. 2 LLC

International Business Machines Corporataion

John J Ellis-Monaghan

Jeffrey P Gambino

Steven M Shank

Kirk David Peterson

Mark David Jaffe

James William Adkisson

Anthony K Stamper

Vibhor Jain

Jed Hickory Rankin

Siva P Adusumilli

Edward J Nowak

Andres Bryant

John Joseph Pekarik

Brent A Anderson

Alain F Loiseau

Rajendran Krishnasamy

Richard John Rassel

Jeffrey Bowman Johnson

James Albert Slinkman

Mark Levy

Qizhi Liu

Sebastian Theodore Ventrone

William F Clark, Jr

Richard A Phelps

Alvin Jose Joseph

Marwan H Khater

Edward William Kiewra

Jerome Brett Lasky

Steven H Voldman

Michel J Abou-Khalil

Michael Joseph Zierak

Terence B Hook

Xuefeng Liu

James Spiros Nakos

Toshiharu Furukawa

Robert Russell Robison

Kerry Bernstein

Wilbur David Pricer

Alan Bernard Botula

James A Culp

Randy Lee Wolf

Max Gerald Levy

Clement Hsingjen Wann

Arne Watson Ballantine

Cyril Cabral, Jr

Zhijiong Luo

Christian Lavoie

Zhong-Xiang He

Robert Mark Rassel

Robert K Leidy

Jason Scott Orcutt

David Louis Harame

Minh H Tong

Sunfei Fang

Bruce Walter Porth

Johnatan A Kantarovsky

Effendi Leobandung

Robert J Gauthier, Jr

Dureseti Chidambarrao

Kevin K Chan

Timothy Dooling Sullivan

JunJun Li

Norman Jay Rohrer

Yun Shi

Nazmul Habib

Theodore James Letavic

Fariborz Assaderaghi

Frank G Kuechenmeister

Edward P Maciejewski

Zhihong Zhang

Daniel Nelson Maynard

Nicholas A Polomoff

Michal Rakowski

Jack Allan Mandelman

Claude Louis Bertin

William R Tonti

Jeffrey W Sleight

Yusheng Bian

Herbert Lei Ho

Shreesh Narasimha

Brian Joseph Greene

Francois Hebert

Jagar Singh

Steven J Bentley

Peter Anton Habitz

Wagdi William Abadeer

Randy William Mann

Richard Quimby Williams

Tom C Lee

William Joseph Murphy

William M Green

Renata A Camillo-Castillo

Erik L Hedberg

Howard Smith Landis

Mark B Ketchen

Robert Michael Geffken

Jeffrey C Maling

Sunil Kumar Singh

Rosemary A Previti-Kelly

Jens Hofrichter

A photodiode and a related method of manufacture are disclosed. The photodiode includes a transfer gate and a floating diffusion adjacent to the transfer gate. In addition, the photodiode includes an upper terminal; an intrinsic semiconductor region in contact with the upper terminal, the intrinsic semiconductor region in a trench in a substrate adjacent to the transfer gate; and a lower terminal in contact with the intrinsic semiconductor region. An insulator layer is along an entirety of a sidewall of the intrinsic semiconductor region and between the intrinsic semiconductor region and the transfer gate. A p-type well may also optionally be between the insulator layer and the transfer gate.

Photodiode with insulator layer along intrinsic region sidewall

The present disclosure relates to semiconductor structures and, more particularly, to heterojunction bipolar transistors (HBTs) with a buried trap rich isolation region and methods of manufacture. The structure includes: a first heterojunction bipolar transistor; a second heterojunction bipolar transistor; and a trap rich isolation region embedded within a substrate underneath both the first heterojunction bipolar transistor and the second heterojunction bipolar transistor.

Heterojunction bipolar transistor with buried trap rich isolation region

The present disclosure relates to semiconductor structures and, more particularly, to photodiodes and methods of manufacture. The structure includes: a top terminal; an intrinsic material in contact with the top terminal; and a bottom terminal in contact with the intrinsic material, the bottom terminal including a P semiconductor material and a fully depleted N semiconductor material.

Photodiodes

Disclosed is a semiconductor structure with a photodiode including: a well region with a first-type conductivity in a substrate, a trench in the well region, and multiple conformal semiconductor layers in the trench. The semiconductor layers include a first semiconductor layer, which is, for example, an intrinsic semiconductor layer and lines the trench, and a second semiconductor layer, which has a second-type conductivity and which is on the first semiconductor layer within (but not filling) the trench and which also extends outside the trench onto a dielectric layer. An additional dielectric layer extends over and caps a cavity that is at least partially within the trench such that surfaces of the second semiconductor layer are exposed within the cavity. Fluid inlet/outlet ports extend to the cavity and contacts extend to the well region and to the second semiconductor layer. Also disclosed are methods for forming and using the semiconductor structure.

Semiconductor structure including photodiode-based fluid sensor and methods

The present disclosure relates to semiconductor structures and, more particularly, to multi-channel transistors and methods of manufacture. The structure includes: a gate structure; a single channel layer in a channel region under the gate structure; a drift region adjacent to the gate structure; and multiple channel layers in the drift region coupled to the single channel layer under the gate structure.

Multi-channel transistor

The present disclosure relates to semiconductor structures and, more particularly, to heterojunction bipolar transistors (HBTs) with a buried trap rich region and methods of manufacture. The structure includes: a trap rich isolation region embedded within the bulk substrate; and a heterojunction bipolar transistor above the trap rich isolation region, with its sub-collector region separated by the trap rich isolation region by a layer of the bulk substrate.

Disclosed are a structure with a multi-level field plate and a method of forming the structure. The field plate includes multiple first conductors on a dielectric layer and separated from each other by spaces with different widths (e.g., by with progressively decreasing widths). A conformal additional dielectric layer extends over the first conductors and onto the dielectric layer within the spaces. The field plate also includes, on the additional dielectric layer, second conductor(s) with portions thereof extending into the spaces. Within the spaces, the second conductor portions are at different heights (e.g., at progressively increasing heights) above the dielectric layer. Such a field plate can be incorporated into a transistor (e.g., a high electron mobility transistor (HEMT)) to, not only reduce the peak of an electric field exhibited proximal to a gate terminal, but to ensure the electric field is essentially uniform level between the gate and drain terminals.

Structure including multi-level field plate and method of forming the structure

The present disclosure relates to semiconductor structures and, more particularly, to a semiconductor on insulator substrate with cavity structures and methods of manufacture. The structure includes: a bulk substrate with at least one rectilinear cavity structure; an insulator material sealing the at least one rectilinear cavity structure; and a buried insulator layer on the bulk substrate and over the at least one rectilinear cavity structure.

Semiconductor on insulator wafer with cavity structures

The present disclosure relates to semiconductor structures and, more particularly, to a photodetector and methods of manufacture. The structure includes: a photodetector; and a semiconductor material on the photodetector, the semiconductor material comprising a first dopant type, a second dopant type and intrinsic semiconductor material separating the first dopant type from the second dopant type.

Photodetector with dual doped semiconductor material

A substrate is formed to include a substrate base and a substrate extension. A photodiode contacts the substrate base. The substrate extension is adjacent the photodiode. An additional device contacts the substrate extension. A sidewall spacer contacts the photodiode and the substrate extension. The additional device includes conductive elements within the substrate extension adjacent the sidewall spacer.

Photodetectors with substrate extensions adjacent photodiodes

Embodiments of the disclosure provide a photonic integrated circuit (PIC) structure with a passage for a waveguide through a barrier structure. The PIC structure includes a barrier structure on a substrate, having a first sidewall and a second sidewall opposite the first sidewall. A passage is within the barrier structure, and extends from a first end at the first sidewall of the barrier structure to a second end at the second sidewall of the barrier structure. A shape of the passage includes a reversal segment between the first end and the second end. A waveguide within the passage and extends from the first end to the second end of the barrier structure.

Barrier structure with passage for waveguide in photonic integrated circuit

The present disclosure relates to semiconductor structures and, more particularly, to a photodiode with an integrated, light focusing elements and methods of manufacture. The structure includes: a trench photodiode comprising a domed structure; and a doped material on the domed structure, the doped material having a concave underside surface.

Photodiode with integrated, self-aligned light focusing element

Semiconductor device structures with substrate biasing, methods of forming a semiconductor device structure with substrate biasing, and methods of operating a semiconductor device structure with substrate biasing. A substrate contact is coupled to a portion of a bulk semiconductor substrate in a device region. The substrate contact is configured to be biased with a negative bias voltage. A field-effect transistor includes a semiconductor body in the device region of the bulk semiconductor substrate. The semiconductor body is electrically isolated from the portion of the bulk semiconductor substrate.

Semiconductor device structures with a substrate biasing scheme

Growing community of inventors

Grand Isle, VT, United States of America

John J Ellis-Monaghan