Lucent Technologies Inc.

At+t Corp.

At&t Bell Laboratories

John J DeMarco

Christophe Pierrat

Robert L Kostelak, Jr

Paul Francis Wysocki

Taeho Kook

Justin Boyd Judkins

In accordance with the invention, a multiwavelength light source comprises a length of optical waveguide amplifier, a multiwavelength reflector for reflecting a plurality of different spectrally separated wavelengths optically coupled to one side of the amplifier and a low reflection output coupled to the other side. A broadband source is provided for passing broadband light to the multiwavelength reflector. In the preferred embodiment, the reflector is a plurality of reflective Bragg gratings, the waveguide amplifier is a length of rare-earth doped fiber (e.g. EDF) and the broadband source is the amplifier pumped to generate ASE. In operation, broadband light is transmitted to the gratings. Light of wavelength channels corresponding to the reflection wavelengths of the gratings is reflected back through the amplifier for further amplification before it arrives at the output. Optionally one or more transmission filters can be disposed between the reflector and the amplifier (or at the output) ASE source to control the relative magnitudes of the selected channels.

High power multiwavelength light source

A phase-shifting optical lithographic mask has a set of phase shifting features and a set of alignment marks, all having a common thickness and being made of a common material, such as chromium oxynitride, that is partially transparent to optical radiation used in an optical lithographic system. Both of these sets are located on a slab of quartz. An alignment shutter layer laterally intervenes between the alignment marks and the phase-shifting features, in order to suppress optical radiation leakage from the phase-shifting features to the alignment areas. A portion of the top surface of the alignment shutter layer and the entire top surface of the reinforced alignment marks are reinforced by an opaque layer, such as chrome. In addition, another similarly reinforced layer, a chip shutter layer, can be laterally located at an extremity of the reinforced alignment marks, in order to suppress optical radiation leakage from one chip area to another in step-and-repeat lithography.

Self-aligned alignment marks for phase-shifting masks

An attenuating phase-shifting optical lithographic mask is fabricated, in a specific embodiment of the invention, by first depositing a uniformly thick molybdenum silicide layer on a top planar surface of quartz. The molybdenum silicide layer has a thickness sufficient for acting as an attenuating (partially transparent) layer in a phase-shifting mask. A uniformly thick chromium layer is deposited on the molybdenum silicide layer. The chromium layer has a thickness sufficient for acting as an opaque layer in the phase-shifting mask. Next, the chromium layer is patterned by dry or wet etching, while the chromium is selectively masked with a patterned resist layer. Then the molybdenum silicide is patterned by dry or wet etching, using the patterned chromium layer as a protective layer, whereby a composite layer of molybdenum silicide and chromium is formed having mutually separated composite stripes. Any remaining resist is removed. Next the top and sidewall surfaces of some, but not others, of these mutually separated stripes are coated with a second patterned resist layer. Finally, the chromium layer, but not the molybdenum silicide layer, is removed from the others of the mutually separated composite stripes.

Self-aligned opaque regions for attenuating phase-shifting masks

A phase-shifting optical lithographic mask is made by a method that produces a set of phase shifting features (11) located in phase-shifting areas and a set of reinforced alignment marks (13, 33) located in alignment areas of the mask. Both of these sets are located on a single slab of quartz (10). The method involves a lift-off step that results in the self-alignment of the alignment marks with respect to the phase-shifting features. All of the phase-shifting features together with all of the alignment marks are patterned during a single step, and all of them comprise a bottom layer (11) of common material and common thickness so as to be partially transparent to optical radiation used in an optical lithographic system. Typically the bottom layer is essentially chromium oxynitride. In order to suppress optical radiation leakage from the phase-shifting features to the alignment mark areas, a reinforced alignment-mark shutter layer (12, 32) is located between the reinforced alignment marks and the phase-shifting areas, and it is made simultaneously with the reinforced alignment marks. And in order to suppress optical radiation leakage from one chip area to another chip area, both located on a single wafer, a reinforced chip shutter layer (14, 34) is also made simultaneously with the reinforced alignment marks and is located between chip areas.

A direct-writing electron beam is used for defining features in a resist layer and hence ultimately in an underlying workpiece, such as in a phase-shifting mask substrate or a semiconductor integrated circuit wafer. The resist layer is located on a top major surface of the workpiece. In a specific embodiment, the resist layer is located underneath a protective layer of polyvinyl alcohol ('PVA'); and a grounded conductive layer, such as a conductive organic layer, is located on the protective layer. After exposing the top major surface of the resulting structure to the direct-writing electron beam, the following steps are performed:

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East Brunswick, NJ, United States of America

John J DeMarco