Freescale Semiconductor,inc.

Google Inc.

Motorola Corporation

John J D'Urso

Gregory W Grynkewich

Kelly Wayne Kyler

Nicholas David Rizzo

Jaynal Abedin Molla

Mark A Durlam

Brian R Butcher

Bradley Neal Engel

Mark F Deherrera

Jeffrey H Baker

Earl D Fuchs

J Jack Ren

Saied N Tehrani

Papu D Maniar

Kenneth Andrew Dean

Yi Wei

Steven M Smith

Steven A Voight

Steve X Dai

A device () with a viewable surface () including a plurality of transparent pedestals () having a reflective material () disposed on its sides () make smudges forming thereon unnoticeable by taking advantage of optical characteristics including contrast and the user's visual acuity. The pedestals () generally have a width () of less than 50 microns, a height () equal to twice the width (), and a spacing () between adjacent pedestals () equal to the width (). The device () may be an electronic device, and more particularly a portable electronic device such as a cell phone.

Viewable surface having unnoticeable smudges

An apparatus and method is provided for removing smudges () including oils and dust from portable electronic displays. The apparatus comprises a display device () positioned within a housing (), comprising a transparent cover () having a surface () viewable through an opening in the housing () and a susceptibility to receiving contaminants (). A vibration device () is positioned against the transparent cover () to provide motion () in a direction parallel to the surface, thereby causing the contaminants to move () across the surface (). The contaminants () may then be hidden by the housing () or ejected by a motion () perpendicular to the surface by another vibrating device (). Electronic circuitry () is provided for activating the vibration device () either during normal operation of the electronic device or as selected by the user.

Smudge removal from electronic device displays

A method of fabricating a cladding region for use in MRAM devices includes the formation of a conductive bit line proximate to a magnetoresistive memory device. The conductive bit line is immersed in a first bath containing dissolved ions of a first conductive material for a time sufficient to displacement plate a first barrier layer on the conductive line. The first barrier layer is then immersed in an electroless plating bath to form a flux concentrating layer on the first barrier layer. The flux concentrating layer is immersed in a second bath containing dissolved ions of a second conductive material for a time sufficient to displacement plate a second barrier layer on the flux concentrating layer.

Method of applying cladding material on conductive lines of MRAM devices

A method for fabricating a cladded conductor () for use in a magnetoelectronics device is provided. The method includes providing a substrate () and forming a conductive barrier layer () overlying the substrate (). A dielectric layer () is formed overlying the conductive barrier layer () and a conducting line () is formed within a portion of the dielectric layer (). The dielectric layer () is removed and a flux concentrator () is formed overlying the conducting line ().

Cladded conductor for use in a magnetoelectronics device and method for fabricating the same

A method of fabricating a magnetoresistive random access memory device comprising the steps of providing a substrate, forming a conductive layer positioned on the substrate, forming a magnetoresistive random access memory device positioned on conductive layer, forming a metal cap on the magnetoresistive random access memory device, and electroless plating a bump metal layer on the metal cap. The bump metal layer acts as a self-aligned via for a bit line subsequently formed thereon.

Method of fabricating a self-aligned via contact for a magnetic memory element

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Chandler, AZ, United States of America

John J D'Urso