Juniper Networks, Inc.

Intel Corporation

Aurrion, Inc.

Openlight Photonics, Inc.

John Hutchinson

Avi Feshali

Gregory Alan Fish

Jared Bauters

Alexander W Fang

Sergei L Sochava

When III-V semiconductor material is bonded to an oxide material, water molecules can degrade the bonding if they become trapped at the interface between the III-V material and the oxide material. Because water molecules can diffuse readily through oxide material, and may not diffuse as readily through III-V material or through silicon, forcing the III-V material against the oxide material can force water molecules at the interface into the oxide material and away from the interface. Water molecules present at the interface can be forced during manufacturing through vertical channels in a silicon layer into a buried oxide layer thereby to enhance bonding between the III-V material and the oxide material. Water molecules can be also forced through lateral channels in the oxide material, past a periphery of the III-V material, and, through diffusion, out of the oxide material into the atmosphere.

Enhanced bonding between III-V material and oxide material

In integrated optical structures (e.g., silicon-to-silicon-nitride mode converters) implemented in semiconductor-on-insulator substrates, wire waveguides whose sidewalls substantially consist of portions coinciding with crystallographic planes and do not extend laterally beyond the top surface of the wire waveguide may provide benefits in performance and/or manufacturing needs. Such wire waveguides may be manufactured, e.g., using a dry-etch of the semiconductor device layer down to the insulator layer to form a wire waveguide with exposed sidewalls, followed by a smoothing crystallographic wet etch.

Smooth waveguide structures and manufacturing methods

In the prior art, tunable lasers utilizing silicon-based tunable ring filters and III-V semiconductor-based gain regions required the heterogeneous integration of independently formed silicon and III-V semiconductor based optical elements, resulting in large optical devices requiring a complex manufacturing process (e.g., airtight packaging to couple the devices formed on different substrates, precise alignment for the elements, etc.). Embodiments of the invention eliminate the need for bulk optical elements and hermetic packaging, via the use of hybridized III-V/silicon gain regions and silicon optical components, such as silicon wavelength filters and stabilized wavelength references, thereby reducing the size and manufacturing complexity of tunable lasing devices.

Method and system for producing wavelength-stabilized light

In the prior art, tunable lasers utilizing silicon-based tunable ring filters and III-V semiconductor-based gain regions required the heterogeneous integration of independently formed silicon and III-V semiconductor based optical elements, resulting in large optical devices requiring a complex manufacturing process (e.g., airtight packaging to couple the devices formed on different substrates, precise alignment for the elements, etc.). Embodiments of the invention eliminate the need for bulk optical elements and hermetic packaging, via the use of hybridized III-V/silicon gain regions and silicon optical components, such as silicon wavelength filters and silicon wavelength references, thereby reducing the size and manufacturing complexity of tunable lasing devices. For example, embodiments of the invention may utilize hybridized III-V/silicon gain regions with ring filters on silicon form a tunable laser with efficient gain from the III-V region, while providing wide tunability, efficient tunability, and narrow linewidth due to the nature of the silicon rings.

Tunable laser with integrated wavelength reference

A wavelength meter, an associated method, and system are generally described. In one example, an apparatus includes a photodiode to receive an optical signal and to generate a photocurrent upon receiving the optical signal, the photodiode having an absorption edge that is substantially aligned with a band of wavelengths, wherein the absorption edge shifts toward longer wavelengths when a reverse bias is applied to the photodiode, and control electronics coupled with the photodiode to apply at least a first reverse bias and a second reverse bias to the photodiode, wherein a ratio of a first measurement of the photocurrent at the first reverse bias and a second measurement of the photocurrent at the second reverse bias provides information about the wavelength of the optical signal.

Device and method for measuring wavelength of an optical signal

According to embodiments of the present invention, an optical device includes a ridge waveguide having the ridge oriented on the waveguide core layer at an angle away from the &#x3c;110&#x3e; direction of the (100) plane of (100) Indium Phosphide substrate. The ridge waveguide may be a laser diode, a Mach-Zehnder modulator, or other suitable optical device.

Trapezoidal ridge waveguide oriented away from &#x3c;110&#x3e; direction

The present invention discloses a microelectromechanical system mask with an array of reflectors, each reflector having two mirrors separated from each other by an adjustable gap.

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Santa Barbara, CA, United States of America

John Hutchinson