Lg Innotek Co., Ltd.

Argo Ai Gmbh

Trumpf Photonics, Inc.

Argo Al, LLC

John Hostetler

Mark Itzler

Brian Piccione

Xudong Jiang

Harold Y Hwang

Krystyna Slomkowski

Robert Wallace Roff

Greg W Charache

Igor Kudryashov

Raymond Joseph Menna

Yahia Tachwali

Holger Schlüter

Ching-Long Jiang

Radosveta Radionova

Yahla Tachwali

Devices, systems, and methods are provided for reducing electrical and optical crosstalk in photodiodes. A photodiode may include a first layer with passive material, the passive material having no electric field. The photodiode may include a second layer with an absorbing material, the second layer above the first layer. The photodiode may include a diffused region with a buried p-n junction. The photodiode may include an active region with the buried p-n junction and having an electric field greater than zero. The photodiode may include a plateau structure based on etching through the second layer to the first layer, the etching performed at a distance of fifteen microns or less from the buried p-n junction.

Systems, methods, and devices for reducing optical and electrical crosstalk in photodiodes

A single photon counting sensor array includes one or more emitters configured to emit a plurality of pulses of energy, and a detector array comprising a plurality of pixels. Each pixel includes one or more detectors, a plurality of which are configured to receive reflected pulses of energy that were emitted by the one or more emitters. A mask material is positioned to cover some but not all of the detectors of the plurality of pixels to yield blocked pixels and unblocked pixels so that each blocked pixel is prevented from detecting the reflected pulses of energy and therefore only detects intrinsic noise.

Real time noise detection method and system for photon counting pixel array comprising a mask material to yield blocked pixels from detecting reflected pulses of energy

A monolithic series-connected laser-diode array is presented, where the array is formed on a non-conductive substrate that includes a plurality of discrete electrically conductive regions. Each laser diode of the array is disposed on a different conductive region such that the laser cavity of each laser diode is optically isolated from its respective conductive region, thereby avoiding optical loss in the laser cavity due to interaction with the highly doped conductive material. Each conductive region is configured to extend past the lateral extent of its respective laser-diode structure. Electrical connection between adjacent laser diodes of the array is made by forming a conductive trace that extends from the top contact of one of the laser diodes to the conductive region on which the other laser diode is disposed.

Monolithic series-connected edge-emitting-laser array and method of fabrication

Methods of preparing front and back facets of a diode laser include controlling an atmosphere within a first chamber, such that an oxygen content and a water vapor content are controlled to within predetermined levels and cleaving the diode laser from a wafer within the controlled atmosphere of the first chamber to form a native oxide layer hating a predetermined thickness on the front and back facets of the diode laser. After cleavage, the diode laser is transported from the first chamber to a second chamber within a controlled atmosphere, the native oxide layer on the front and back facets of the diode laser is partially removed, an amorphous surface layer is formed on the front and back facets of the diode laser, and the front and back facets of the diode laser are passivated.

Laser facet passivation

Growing community of inventors

Hightstown, NJ, United States of America

John Hostetler