Altera Corporation

Winbond Electronics Corporation

John Henry Bui

Chiakang Sung

Khai Nguyen

Bonnie I Wang

Xiaobao Wang

Triet M Nguyen

Ket Chiew Sia

Lay Hock Khoo

David Edward Jefferson

John C Costello

Stephanie T Tran

Poongyeub Lee

Chien-fan Wang

A level-shift buffer device includes an input buffer circuit, a configurable circuit and a level-shift circuit. The input buffer circuit receives input/output (I/O) supply voltage at a first voltage level among a plurality of voltage levels that are supported by the level-shift buffer device. The input buffer circuit generates a first input signal according to the first voltage level of the I/O supply voltage. The configuration circuit controls at least one transistor of the configurable circuit according to the configuration signal to generate a second input signal. The level-shift circuit generates an output signal at a second voltage level according to the second input signal and the configuration signal, wherein the level-shift circuit functions as an inverter or a level shifter in accordance with the configuration signal.

Level-shift buffer device, system and operating method thereof

In an aspect, the disclosure is directed to an electrical circuit which includes not limited to: a first bonding pad having a bias voltage, a voltage pull-up circuit configured to set the bias voltage of the first bonding pad to a high voltage, a voltage pull-down circuit configured to switch bias voltage of the first bonding pad from the high voltage to a low voltage in response to the voltage pull-down circuit receiving a first control signal which activates the voltage-pull down circuit, a rise time delay control circuit configured to control a rise time of the bias voltage of the first bonding pad, wherein the bias voltage of the first bonding pad starts to rise in response to the first control signal deactivating the voltage pull-down circuit, and a driving circuit configured to drive a second control signal to activate the driving circuit.

Electrical circuit for switching bias voltage of bonding pad and electronic device having the electrical circuit

Integrated circuits with clock generation and distribution circuitry are provided. Integrated circuits may include phase-locked loops configured to generate multiple clock signals that are delayed versions of one another. The clocks signal may be distributed to various regions on an integrated circuit using serially connected clock buffer blocks. Each buffer block may include bidirectional pairs of buffer circuits coupled in parallel. Each buffer circuit may have a first input configured to receive an input clock signal, an output at which a corrected version of the input clock signal is provided (e.g., an output at which an output clock signal with desired duty cycle is provided), a second input that receives a first delayed clock signal for setting the desired duty cycle for the output clock signal, and a third input that receives a second delayed clock signal that is high at least when the first delayed clock signal rises high.

Duty cycle distortion correction circuitry

Integrated circuits with memory circuitry are provided. The memory circuitry may include rows of data line segments. Each data line segment may have associated memory cells, a programmable-strength precharge circuit, a latch circuit, a programmable-strength pull-up circuit, and a data line segment buffer. The precharge circuit may include multiple paths that can be switched into use depending on the configuration of programmable bits. The programmable-strength pull-up circuit may include multiple pull-up paths. The number of pull-up paths in use can be configured. The latch circuit may include a latch inverter that enables the programmable latch circuit during precharge operations. During a precharge period, the latch circuit can be disabled to block contending pull-down current and the data line segment buffer can be disabled to avoid crossbar currents.

Programmable precharge circuitry

An adjustable delay circuit includes first and second transistors each having a control input coupled to an input node of the adjustable delay circuit and an output coupled to an output node of the adjustable delay circuit. The adjustable delay circuit includes a first pass gate coupled between first and second capacitors and the output node of the adjustable delay circuit. The first and the second capacitors are coupled between a node at a high voltage and a node at a low voltage. The first pass gate is operable to be controlled by a first delay control signal.

Techniques for phase adjustment

A circuit includes a phase adjustment circuit and a dead zone detect circuit. The phase adjustment circuit is operable to receive periodic signals and is operable to provide one of the periodic signals as a selected periodic signal based on a phase comparison between a data signal and the selected periodic signal. Each of the periodic signals has a different phase. The dead zone detect circuit is operable to cause the phase adjustment circuit to shift a phase of the selected periodic signal if the dead zone detect circuit determines that the data signal is in a dead zone. The dead zone detect circuit defines the dead zone based on two of the periodic signals. The phase adjustment circuit is operable to adjust a phase range of the dead zone.

Dead zone detection for phase adjustment

A dynamic phase alignment circuit includes a phase generator circuit having delay-locked loop circuits that generate periodic output signals. Each of the delay-locked loop circuits generates one of the periodic output signals in response to at least two periodic input signals. A multiplexer circuit selects a selected periodic signal from among the periodic input signals and the periodic output signals based on select signals. A phase detection circuit compares a phase of the selected periodic signal to a data signal to generate a phase detection signal. A control logic circuit generates the select signals. The control logic circuit adjusts the select signals based on changes in the phase detection signal to cause the multiplexer circuit to adjust the phase of the selected periodic signal.

A circuit includes first transistors and a comparator. The comparator compares a reference signal and a signal that is based on conductive states of the first transistors. A control circuit generates first control signals based on an output signal of the comparator. The conductive states of the first transistors are determined based on the first control signals. An arithmetic circuit performs an arithmetic function based on the first control signals and second control signals to generate calibration signals. Second transistors provide a termination impedance at an external terminal of the circuit that is based on the calibration signals.

Techniques for on-chip termination

Integrated circuits with memory elements are provided. The memory elements may be arranged in an array. Data lines may be used to load data into the memory elements and may be used to read data from the memory elements. The memory elements may be used to store configuration data on a programmable logic device integrated circuit. Each memory element may have an output that supplies a programmable transistor gate with a static control signal. Data reading circuitry may be coupled to each data line to read data from an addressed memory element on that data line. The data reading circuitry for each data line may include a precharge transistor and an output latch. The output latch may contain cross-coupled inverters. An inwardly-directed inverter in the output latch may have a pull-up transistor that is connected in series with a current source.

Memory elements with leakage compensation

Voltage regulator circuitry is provided. The voltage regulator circuitry is suitable for powering core logic on a programmable logic device. The voltage regulator circuitry receives an external power supply voltage and reduces the external power supply voltage to a core power supply voltage if needed. If the external power supply voltage is at the same level needed to power the core logic, the voltage regulator circuitry passes the power supply voltage to the core logic. The voltage regulator circuitry monitors the core power supply voltage using a feedback path. Overshoot and undershoot fluctuations are minimized. The external power supply voltage may be supplied to a first bus. The core power supply voltage may be distributed on a second bus. A ring of transistors may be used to convey power from the first bus to the second bus. Control circuitry may control the ring of transistors based on programmable setpoint voltages.

Programmable voltage regulator with dynamic recovery circuits

Programmable dynamic amplifiers with hysteresis are provided. The hysteretic amplifiers have a first input voltage threshold when the output voltage is at a high voltage and a second input voltage threshold when the output voltage is at a low voltage. A multiplexer controls the hysteretic threshold voltages in response to the output signal of the amplifier. The hysteretic amplifiers can be programmed to have positive or negative hysteresis. When the amplifier is programmed with positive hysteresis, the output voltage transitions after the input voltages have both reached a common voltage value. When the amplifier is programmed with negative hysteresis, the output voltage transitions before the input voltages have both reached a common voltage value.

Programmable amplifiers with positive and negative hysteresis

Output buffers are provided that are compatible with any differential output standard. The output buffers compensate for variations in process, the supply voltage, and temperature. The edge rate of an output buffer can be programmed to be compatible with different output standards. The edge rate of an output buffer can compensate for variations in process, voltage, and temperature. The output voltage of an output buffer can be adjusted to be compatible with different output standards.

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Sunnyvale, CA, United States of America

John Henry Bui