Intel Corporation

University of California

Imec

Katholieke Universiteit Leuven, Ku Leuven R&d

John Heck

Haisheng Rong

Qing Ma

David Neil Hutchison

Valluri Ramana Rao

Quan Anh Tran

Tsung-Kuan Allen Chou

Ansheng Liu

Li-Peng Wang

Harel Frish

Khaled Ahmed

Richard O Jones

Jonathan K Doylend

Mineo Yamakawa

Selena Chan

Narayan Sundararajan

Hanan Bar

Sansaptak W Dasgupta

Yun-Chung Na

Richmond Hicks

Michael T Morse

Leonel R Arana

Thomas L Sounart

Anup Pancholi

Ramon C Cancel Olmo

Charles H Dennison

Mario J Paniccia

Daoqiang Lu

John E Bowers

Derchang Kau

Joshua R Smith

Zhi Li

Ganesh Balamurugan

Sergei L Sochava

Jie Sun

Brian H Kim

Ming C Wu

Raiyomand F Aspandiar

Ankur Agrawal

Alexander Krichevsky

Ling Liao

Raghuram Narayan

Simone Severi

Hyundai Park

Shengbo Xu

Nickolai Belov

Narayanan Sundararajan

Hari Mahalingam

Daniel M Wong

Dong S Shim

Meer Nazmus Sakib

Wei Qian

Joseph S Hayden, Iii

Reece DeFrees

Mark Isenberger

Israel Petronius

Matthew Sysak

Woosung Kim

Ranjeet Kumar

Olga Gorbounova

George A Ghiurcan

Kelly Christopher Magruder

Daniel Grodensky

David Arbel

Seth M Slavin

Michael E Favaro

Joshua Keener

Jeffrey B Driscoll

Susheel G Jadhav

Olufemi I Dosunmu

Eyal Bar-sadeh

Boaz Weinfeld

Hao Li

Aliasghar Eftekhar

Kenneth Brown

Kumar Satya Harinadh Potluri

Michele J Berry

Saeed Fathololoumi

Duanni Huang

Lina He

Priyanka Dobriyal

Gert Claes

Mengyuan Huang

Jonathan Doylend

Steve W Greathouse

Paul Yu

Hasitha Jayatilleka

Wesley Harrison

Stefan Meister

Lingtao Liu

Peicheng Liao

Chaoxuan Ma

Guan-Lin Su

Kyu Hyun Kim

Yoel Shetrit

Sungbong Park

Pegah Seddighian

Ajay Jain

Kishore Sundara-Rajan

A method may include: forming a base layer on a substrate; forming a waveguide assembly on the base layer, where the waveguide assembly is surrounded by a cladding layer; forming a trench opening through the cladding layer and the base layer; forming an undercut void by etching the substrate through the trench opening, where the undercut void extends under the waveguide assembly and the base layer; and filling the trench opening with a filler to seal off the undercut void. Other embodiments are described and claimed.

Heating of thermo-optic device

An optical system can include a optical receiver comprising an optical waveguide, an optical lid adjacent the waveguide, and a reflective surface proximate an output of the optical waveguide to direct light from the waveguide towards an output of the optical lid. The optical system can also include a photodetector (PD) die comprising a substrate, a concave mirror, and a photodetector. The concave mirror is formed on a first side of the substrate and the photodetector is disposed on a second side of the substrate, the first side opposite the second side, wherein the photodetector is disposed on the second side of the PD die offset from the optical axis of the optical element.

Shallow-profile optical elements for photonics receivers

Silicon photonic integrated circuit (PIC) on a multi-zone semiconductor on insulator (SOI) substrate having at least a first zone and a second zone. Various optical devices of the PIC may be located above certain substrate zones that are most suitable. A first length of a photonic waveguide structure comprises the crystalline silicon and is within the first zone, while a second length of the waveguide structure is within the second zone. Within a first zone, the crystalline silicon layer is spaced apart from an underlying substrate material by a first thickness of dielectric material. Within the second zone, the crystalline silicon layer is spaced apart from the underlying substrate material by a second thickness of the dielectric material.

Silicon photonic integrated circuits on substrates with structured insulators having specific thicknesses in separate zones

Embodiments described herein may be related to apparatuses, processes, and techniques related to coherent optical receivers, including coherent receivers with integrated all-silicon waveguide photodetectors and tunable local oscillators implemented within CMOS technology. Embodiments are also directed to tunable silicon hybrid lasers with integrated temperature sensors to control wavelength. Embodiments are also directed to post-process phase correction of optical hybrid and nested I/Q modulators. Embodiments are also directed to demultiplexing photodetectors based on multiple microrings. In embodiments, all components may be implements on a silicon substrate. Other embodiments may be described and/or claimed.

Optical coherent receiver on a chip

Embedded three-dimensional electrode capacitors, and methods of fabricating three-dimensional electrode capacitors, are described. In an example, an integrated circuit structure includes a first metallization layer above a substrate, the first metallization layer having a first conductive structure in a first dielectric layer, the first conductive structure having a honeycomb pattern. An insulator structure is on the first conductive structure of the first metallization layer. A second metallization layer is above the first metallization layer, the second metallization layer having a second conductive structure in a second dielectric layer, the second conductive structure on the insulator structure, and the second conductive structure having the honeycomb pattern.

Embedded three-dimensional electrode capacitor

Embodiments of the present disclosure are directed to low numerical aperture (NA) optical couplers, or spot size converters, that include a lateral taper section and/or a vertical adiabatic taper section. In embodiments, the optical couplers may be positioned on a silicon substrate proximate to V-grooves within the substrate to contain optical fibers to self-align and to couple with the optical couplers. Other embodiments may be described and/or claimed.

Multi-layer silicon photonics apparatus

A device includes a layer including a first III-Nitride (III-N) material, a channel layer including a second III-N material, a release layer including nitrogen and a transition metal, where the release layer is between the first III-N material and the second III-N material. The device further includes a polarization layer including a third III-N material above the release layer, a gate structure above the polarization layer, a source structure and a drain structure on opposite sides of the gate structure where the source structure and the drain structure each include a fourth III-N material. The device further includes a source contact on the source structure and a drain contact on the drain structure.

III-N multichip modules and methods of fabrication

Embodiments may relate to a wavelength-division multiplexing (WDM) transceiver that has a silicon waveguide layer coupled with a silicon nitride waveguide layer. In some embodiments, the silicon waveguide layer may include a tapered portion that is coupled with the silicon nitride waveguide layer. In some embodiments, the silicon waveguide layer may be coupled with a first oxide layer with a first z-height, and the silicon nitride waveguide layer may be coupled with a second oxide layer with a second z-height that is greater than the first z-height. Other embodiments may be described or claimed.

Integrated photonic transceiver

Embodiments disclosed herein include optoelectronic systems and methods of forming such systems. In an embodiment the optoelectronic system comprises a board, and a carrier attached to the board. In an embodiment, a first die is on the carrier. In an embodiment, the first die is a photonics die, and a surface of the first die is covered by an optically transparent layer.

Silicon photonic integrated lens compatible with wafer processing

In embodiments, an optoelectronic apparatus may include a substrate with a first side and a second side opposite the first side; a photodetector disposed on the first side of the substrate, the photodetector to convert a light signal into an electrical signal; and a dielectric metasurface lens etched into the second side of the substrate, the dielectric metasurface lens to collect incident light and focus it through the substrate onto the photodetector.

Optical receiver employing a metasurface collection lens having concentric belts or rings

Embodiments include apparatuses, methods, and systems including a semiconductor photonic device having a waveguide disposed above a substrate. The waveguide has a first section including amorphous silicon with a first refractive index, and a second section including crystalline silicon with a second refractive index different from the first refractive index. The semiconductor photonic device further includes a heat element at a vicinity of the first section of the waveguide. The heat element is arranged to generate heat to transform the amorphous silicon of the first section of the waveguide to partially or completely crystallized crystalline silicon with a third refractive index. The amorphous silicon in the first section may be formed with silicon lattice defects caused by an element implanted into the first section. Other embodiments may also be described and claimed.

Mechanisms for refractive index tuning semiconductor photonic devices

Embodiments include apparatuses, methods, and systems including a laser device having a 1&#xd7;3 MMI coupler within a semiconductor layer. A front arm is coupled to the MMI coupler and terminated by a front reflector. In addition, a coarse tuning arm is coupled to the MMI coupler and terminated by a first back reflector for coarse wavelength tuning, a fine tuning arm is coupled to the MMI coupler and terminated by a second back reflector for fine wavelength tuning, and a SMSR and power tuning arm is coupled to the MMI coupler and terminated by a third back reflector. A gain region is above the front arm and above the semiconductor layer. Other embodiments may also be described and claimed.

Multi-mode interference (MMI) based laser devices for heterogeneous platforms

Embodiments of the present disclosure are directed toward techniques and configurations for an optical coupler including an optical waveguide to guide light to an optical fiber. In embodiments, the optical waveguide includes a tapered segment to propagate the received light to the optical fiber. In embodiments, the tapered segment is buried below a surface of a semiconductor substrate to transition the received light within the semiconductor substrate from a first optical mode to a second optical mode to reduce a loss of light during propagation of the received light from the optical waveguide to the optical fiber. In embodiments, the surface of the semiconductor substrate comprises a bottom planar surface of a silicon photonic chip that includes at least one or more of passive or active photonic components. Other embodiments may be described and/or claimed.

Optical device including buried optical waveguides and output couplers

Disclosed herein are display and photonic devices utilizing metasurfaces. An optical device comprising an optical component and an optical transmission medium is disclosed. A waveguide couples the optical component and the optical transmission medium. A metasurface is disposed on an end of the waveguide and arranged to increase an optical coupling between the waveguide and the optical transmission medium. Additionally, a display comprising a number of light emitting elements and a metasurface for each of the light emitting elements. The metasurface arranged to eliminate screen door effect in virtual reality display systems.

Metasurface devices for display and photonics devices

Growing community of inventors

Berkeley, CA, United States of America

John Heck