Aptina Imaging Corporation

Micron Technology Incorporated

Agilent Technologies, Inc.

Avago Technologies General IP (singapore) Pte. Ltd.

Avago Technologies Sensor IP Pte. Ltd.

John H Stanback

Thomas Edward Dungan

Chintamani P Palsule

Mark D Crook

Fredrick P LaMaster

Russell Wayne Gruhlke

Dale W Schroeder

Xuemei Zhang

Ramakrishna Kakarala

Homayoon Haddad

Changhoon Choi

Hans G Rohdin

Thomas Joy

Jonathan Kwadwo Abrokwah

Jack D Meyer

Cheryl Bailey

Kari Hansen

Duane Fasen

Nathan Perkins

Bond Yu-Pong Ying

Bond Yu Pong Ying

Nate Perkins

Phil Marsh

Chris Feng

Philbert Marsh

Jon Goodbread

Molly Johnson

A pseudomorphic high electron mobility transistor (pHEMT) comprises: a substrate comprising a Group III-V semiconductor material; buffer layer disposed over the substrate; and a channel layer disposed over the buffer layer. The buffer layer comprises microprecipitates of a Group V semiconductor element. A method of fabricating a pHEMT is also described.

Pseudomorphic high electron mobility transistor (pHEMT) comprising low temperature buffer layer

A pseudomorphic high electron mobility transistor (PHEMT) comprises a substrate comprising a Group III-V semiconductor material, a buffer layer disposed over the substrate, wherein the buffer layer comprises microprecipitates of a Group V semiconductor element and is doped with an N-type dopant, and a channel layer disposed over the buffer layer.

Pseudomorphic high electron mobility transistor comprising doped low temperature buffer layer

A pixel including a substrate of a first conductivity type and having a surface, a photodetector of a second conductivity type that is opposite the first conductivity type, a floating diffusion region of the second conductivity type, a transfer region between the photodetector and the floating diffusion, a gate positioned above the transfer region and partially overlapping the photodetector, and a pinning layer of the first conductivity type extending at least across the photodetector from the gate. A channel implant of the first conductivity type extending from between a midpoint of the transfer gate and the floating diffusion to at least across the photodiode and having a dopant concentration such that a dopant concentration of the transfer region is greater proximate to the photodetector than the floating diffusion, and wherein a peak dopant concentration of the channel implant is at a level and at a depth below the surface such that a partially-buried channel is formed in the transfer region between the photodiode and floating diffusion when the transfer gate is energized.

Pixel with asymmetric transfer gate channel doping

A semiconductor integrated circuit structure and method for fabricating. The semiconductor integrated circuit structure includes a light sensitive device integral with a semiconductor substrate, a cover dielectric layer disposed over the light sensitive device, and a lens-formation dielectric layer disposed over the cover dielectric layer. Light is transmittable though the cover dielectric layer, and through the lens-formation dielectric layer. The lens-formation dielectric layer forms an embedded convex microlens. The microlens directs light onto the light sensitive device.

Optical enhancement of integrated circuit photodetectors

Imaging systems and methods are provided. One exemplary system incorporates multiple lenses that are individually configured to receive visible light from an object to be imaged, and to direct this light upon a corresponding sensor array. Luminance information is then derived from signals generated in one or more of the sensor arrays. When chrominance information is desired, an optical filter is interposed between a lens and the corresponding sensor array. The mosaic pattern contained in the optical filter is tailored to provide advantageous chrominance information. One or more such filters with different mosaic patterns may be employed. The luminance and chrominance information obtained from the sensor arrays are combined to generate an image of the object.

Multi-lens imaging systems and methods using optical filters having mosaic patterns

A semiconductor integrated circuit structure and method for fabricating. The semiconductor integrated circuit structure includes a light sensitive device integral with a semiconductor substrate, a cover dielectric layer disposed over the light sensitive device, and a lens-formation dielectric layer disposed over the cover dielectric layer. Light is transmittable through the cover dielectric layer; and through the lens-formation dielectric layer. The lens-formation dielectric layer forms an embedded convex microlens. The microlens directs light onto the light sensitive device.

A digital image sensor comprising an array of pixels and a processor is provided. The array of pixels comprises a current pixel in a first color plane that is configured to produce a current sensor value, a first plurality of pixels in the first color plane that is configured to produce a first plurality of sensor values, and a second plurality of pixels in the second color plane that is configured to produce a second plurality of sensor values. The processor is configured to generate a plurality of estimate values using the first plurality of sensor values and a plurality of intensity ratios associated with the second plurality of sensor values, and the processor is configured to determine whether the current pixel is defective using the plurality of estimate values and the current sensor value.

System and method for detecting and correcting defective pixels in a digital image sensor

A bad pixel correction (BPC) algorithm that can be implemented on the image sensor chip is provided for detecting and correcting defective pixels in a digital color image sensor. Gradients of neighboring pixels in at least one other color plane than the color plane of a current pixel and a range of sensor values from neighboring pixels in the same color plane as the current pixel are determined. If the sensor value of the current pixel is outside of the range by a threshold amount that is calculated using one or more of the gradients, the current pixel is determined to be a defective pixel, and replaced using the sensor values of the neighboring pixels in the same color plane.

Method for detecting and correcting defective pixels in a digital image sensor

Imaging systems and methods are provided. One exemplary system incorporates multiple lenses that are individually configured to receive multi-wavelength light from an object to be imaged. Each lens provides an optimal modulation transfer function (MTF) for an individual wavelength contained in the multi-wavelength light when this individual wavelength of light strikes the lens at a particular incident angle. Associated with each lens is a color filter and a sensor. The color filter receives the multi-wavelength light from the lens, and transmits the individual wavelength of light on to the sensor. The image signals obtained from each of the multiple sensors are combined to generate an image of the object.

Imaging systems and methods

A semiconductor integrated circuit structure and method for fabricating. The semiconductor integrated circuit structure includes a light sensitive device integral with a semiconductor substrate, a cover dielectric layer disposed over the light sensitive device, and a lens-formation dielectric layer disposed over the cover dielectric layer. Light is transmittable though the cover dielectric layer; and through the lens-formation dielectric layer. The lens-formation dielectric layer forms an embedded convex microlens. The microlens directs light onto the light sensitive device.

A pixel including a substrate of a first conductivity type, a photodetector of a second conductivity type that is opposite the first conductivity type and configured to convert incident light to a charge, a floating diffusion of the second conductivity, and a transfer region between the photodetector and floating diffusion. A gate is formed above the transfer region and partially overlaps the photodetector and is configured to transfer charge from the photodetector to the floating diffusion. A pinning layer of the first conductivity type extends at least across the photodetector from the gate. A channel region of the first conductivity type extends generally from a midpoint of the gate at least across the photodiode and is formed by an implant of a dopant of the first conductivity and having a concentration such that a dopant concentration of the transfer region is greater proximate to the photodetector than proximate to the floating diffusion.

An image sensor system and methods of making such a system are described. The image sensor system includes a color filter array that is formed by a color filter process that incorporates a bottom antireflection coating. The bottom antireflection coating forms a protective layer that protects exposed areas of the active image sensing device structure during formation of the color filter array and, thereby, preserves the intrinsic transmission characteristics of the active image sensing device structure. The bottom antireflection coating also reduces degradation of metal structures (e.g., bonding pads) and pixel edges at the exposed surface of the active image sensing device structure. In addition, the bottom antireflection coating provides a reliable adhesive surface for the color filter array, substantially eliminating lifting of the color filter array resist structures. In some embodiments, the bottom antireflection coating also improves the optical transmission characteristics of one or more colors of the colors filter array.

Bottom antireflection coating color filter process for fabricating solid state image sensors

An integrated polysilicon fuse and diode and methods of making the same are provided. The integrated polysilicon fuse and diode combination may be implemented in a programmable cross point fuse array. The integrated polysilicon fuse and diode may be used in a random access memory (RAM) cell. The polysilicon diode may be isolated from a substrate and other devices, use less area on a substrate, and cost less to manufacture compared to other diodes.

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Ft. Collins, CO, United States of America

John H Stanback