International Business Machines Corporation

Other

K2 Keller Consulting, LLC

Lam Research Corporation

Princeton University

Varian Semiconductor Equipment Associates, Inc.

Keller, John H.

John H Keller

Michael S Barnes

Dennis K Coultas

John C Forster

Charles M McKenna

Joseph S Logan

Robert P Westerfield, Jr

Robert E Tompkins

James R Winnard

James Anthony O'Neill

William W Hicks

Gregory Costrini

Thomas E Wicker

Charles J Hendricks

Jonathan Daniel Chapple-Sokol

Gary S Selwyn

Jyothi Singh

Brian H Desilets

John E Heidenreich, Iii

Raymond R Ruckel

Harris C Jones

James A Seirmarco

William M Holber

Tina J Cotler

Joseph H Koestner

John L Forneris

Thomas A Gunther

Albert R Ellingboe

John Wallace Keller

Chang-Ching Kin

Michael A Fury

Melanie M Chow

Dragan Podlesnik

By Margaret Arndt, Administratrix

Herbert L Arndt, Deceased

John G Forster

James W Robinson

Kathleen J Keller

Roderick William Boswell

Watercraft hulls and parts thereof are disclosed which improve hydrodynamic performance for yachts, sailboards, and other craft. Drag at the transition from displacement mode to planing mode may be reduced to be the same or less than the minimum drag experienced in planing mode. Exemplary embodiments may include a bow with a center planing surface and tunnels to either side. The bow tunnels may each end in a step. At least part of the center planing surface may be cambered. A spoiler and/or interceptor may be provided at an aft end of a camber of a planing surface. For some hulls, the bow is followed by a main lift surface which is followed by a back lift surface (from stem to stern). In the back lift surface behind the main lift surface, a tunnel surface may be provided to add longitudinal stability.

Advances in watercraft hull lift, efficiency, and reduced hump drag with increased stability

A hull for a planing type watercraft has a front lift surface, a high lift surface, and a back planing surface. The high lift surface is adjacent a rockered keel area and between the front lift surface and the back planing surface. The center of dynamic lift on the high lift surface is at or in front of a point which is 15% of the hull length behind a total center of gravity of the hull under loading. At least the back one third of the high lift surface is cambered, and a beam of the high lift surface is greater than two thirds of the maximum width of the hull. The average camber of the front lift surface, the high lift surface, and the back planing surface together is less than or equal to zero.

Watercraft hull with improved lift, planing speed range, and near maximum efficiency

A step shape in a planing hull for water craft and more particularly for sailboards, surfboard or PWC for increasing the lift in front of the step and decreasing it in back at high planing speed, which has dynamic lift directly behind the step when the hull is traveling at a transition speed between displacement mode and planing mode, but at high planing speed it does not have lift directly behind the step. The hull has increased speed because the lift behind the step at transition speed allows the position of the step to be moved forward and in one embodiment has cambered surface () in front of the step. This step does not go across the full width of the hull such that there is a continuous planing surface in front of the fins or other means, which it is desirous that they not ventilate, and fin or other means has more ventilation resistance in another embodiment.

Sailboard step design with less ventilation and increased speed

High performance of a sailboard is achieved over a wider range of wind and water conditions by providing a hull having two or more planing surfaces which may differ in shape and/or aspect ratio. Drag due to suction at steps between planing surfaces is reduced by venting to the air. Cusp shaping of the respective planing surfaces can reduce and stabilize the angle of attack at the displacement/planing transition without causing fore-and-aft pitching effects known as porpoising. By confining water under the planing surfaces to reduce lateral outflow thereof through increased downward curvature of the bottom of the board, winglets, asymmetrical fins, fences and the like, the effective width and aspect ratio of the wetted area may be altered beyond that of the actual geometry of the planing surfaces to further increase lift and reduce drag while providing additional sources of lift at displacement, transitional and planing speeds. Steps and/or cambered shapes of the planing surface may be used to dramatically further reduce wetted area and further increase effective aspect ratio.

Planing sailboard

Ion optical methods and apparatus are provided for producing low energy ion beams. The apparatus includes an acceleration electrode for accelerating the ion beam, a deceleration electrode downstream of the acceleration electrode for decelerating the ion beam, and an ion optical element downstream of the deceleration electrode for inhibiting electrons in the beam plasma from reaching the deceleration electrode. The deceleration electrode is biased at a voltage that is selected to provide a potential barrier to thermal ions in the beam plasma to inhibit the thermal ions from reaching the acceleration electrode. The ion optical element maybe implemented as an electron repulsing electrode or as a magnetic element. The acceleration electrode, the deceleration electrode, or both, may be segmented in a direction lateral to the ion beam to define individually controllable electrode segments. The ion optical apparatus may be implemented as an ion source extraction system or as a deceleration lens system.

Extraction and deceleration of low energy beam with low beam divergence

High performance of a sailboard is achieved over a wider range of wind and water conditions by providing a hull having two or more planing surfaces which may differ in shape and/or aspect ratio. Drag due to suction at steps between planing surfaces is reduced by venting to the air. Cusp shaping of the respective planing surfaces can reduce and stabilize the angle of attack at the displacement/planing transition without causing fore-and-aft pitching effects known as porpoising.

A well-defined buried layer is developed in a body of semiconductor material such as a wafer at high throughput and without developing non-annullable crystal lattice defects at a surface of the body of semiconductor material using a broad, substantially uniform ion beam, preferably provided by an electron-cyclotron resonance or bucket or multi-pole plasma source, which is allowed to produce ionization only when a stable acceleration voltage is present to provide a narrow spread of ion energies. High purity of ion population in the ion beam is provided by employing a high level of vacuum (e.g. fractions of a microTorr) in the implantation vessel or ion source and introducing ionizable material in substantially pure form. Thus mass analysis of the beam is unnecessary for implantation of only a desired ion species. A magnetic filter may be employed to adjust relative populations of ion species. Arc breakdown can be avoided by increasing the length of the ion beam extraction column so that the. implantation process can be conducted at a high duty cycle or even continuously.

SOI plasma source ion implantation

Uniformity of plasma density is enhanced at high plasma density and with reduced gas cracking and/or without electron charging of a workpiece by limiting coupling of voltages to the plasma and returning a majority of RF current to elements of an antenna driven with different phases of a VHF/UHF signal and/or providing a magnetic filter which separates a hot plasma region from a cold plasma region along a side of the chamber and further provides a preferential drift path between the hot and cold plasma regions. The magnetic field structure of the magnetic filter is preferably closed at one end or fully closed to surround the plasma. Additional magnetic elements limit the transverse field at the surface of a workpiece to less than 10 Gauss. Either or both of the antenna and the magnetic filter can be retrofitted to existing plasma reactor vessels and improve the performance and throughput thereof.

Plasma reactor with high selectivity and reduced damage

Spreading of an ion beam when passing through a dipole magnet is reduced or suppressed by electrostatic ion beam confinement which supplements magnetic confinement which may be provided. The magnetic confinement is enhanced by the provision of a magnetic mirror through concentration and localized increase of the dipole field with a concave profile of the pole pieces faces and/or provision of permanent magnets or localized regions of material of increased permeability to form magnetic cusps. Pitch and geometry of convex portions of the pole piece faces are adjusted to increase the mirror ratio and the location of the maximum mirror field relative to the thickness of a graphite or insulating liner which may be employed. Electrostatic confinement elements in the form of negatively charged electrodes and/or electrically isolated electrodes or insulators which assume a negative charge. Ionization of plasma between the pole pieces may be enhanced by application of a VHF/UHF field having a frequency of about 40 MHz to 100 MHZ or higher.

Increased ion beam throughput with reduced beam divergence in a dipole magnet

VHF/UHF power having a frequency of about 40 MHz or higher is applied across generally radial elements of an antenna and the phase of a standing wave component of the voltage in the generally radial elements is adjusted to provide relatively uniform density of a high density plasma across an area of at least the size of a semiconductor wafer being processed. Capacitive coupling of power to the plasma enhances the hot tail distribution of electron energies which is associated with low levels of gas cracking and the production of radicals such as fluorine which are not material-selective in semiconductor processing operations such as oxide etching. Accordingly, material-selectivity of processes may be maintained while the high density plasma accelerates the process to significantly improve tool throughput.

High density plasma tool with adjustable uniformity and stochastic electron heating for reduced gas cracking

An apparatus and method of producing a negative ion plasma for use in manufacturing of microelectronic devices, particularly etching of microelectronic patterns in semiconductor wafers. A negative ion plasma is produced from a hot electron plasma formed by a RF or UHF plasma source. The negative ion plasma includes positive ions, negative ions and relatively cold electrons, such electrons having an effective electron temperature or average energies less than that for maintaining the plasma. The fields producing the hot plasma are isolated from the negative ion plasma in a cold plasma region by a magnetic filter. The magnetic filter confines the plasmas to provide plasma uniformity at a work piece being etched by the negative ion plasma. The magnetic filter further prevents hot electrons originating in the hot electron plasma from diffusing into the negative ion plasma, while allowing positive ions and cold electrons to diffuse from the hot plasma to the negative ion plasma. An RF bias on the work piece accelerates the positive ions, electrons and/or negative ions to the work piece being etched.

Apparatus and method of producing a negative ion plasma

An apparatus and method for producing a cold electron plasma for etching a work piece. An electromagnetic wave is generated at a first frequency to produce a plasma in a hot plasma region of the etching chamber, the plasma having positive ions, cold electrons, and hot electrons. A plurality of magnetic coils are disposed about the perimeter of the etching chamber for generating a rotating magnetic field with an electron cyclotron resonance at a second frequency. The rotating magnetic field has a magnetic potential such that the rotating magnetic field: (i) allows the positive ions and the cold electrons to diffuse from the plasma through the rotating magnetic field to produce the cold electron plasma in a cold plasma region over the work piece, and (ii) inhibits the hot electrons from the plasma from diffusing through the rotating magnetic field to the cold electron plasma.

Cold electron plasma reactive ion etching using a rotating

Uniformity of plasma density and potential are increased by reducing plasma confinement through use of a non-uniform, graded magnetic field by asymmetric energization of electromagnets with a waveform including harmonics of a fundamental frequency. The magnetic field strength or intensity decreases in the direction of ExB drift of energetic electrons within the plasma which tends to cause additional ionization in the plasma and a gradient of plasma density and potential. Thus, increase in ionization due to ExB drift is balanced by reduction of plasma confinement. Uniformity of average exposure to the plasma is further increased by rotation of the magnetic field. Uniformity of plasma potential or wafer bias is further improved by modulation of the radio frequency (RF) power used to form the plasma in synchronism with decreases in the magnetic field during switching for magnetic field rotation.

Reduction of semiconductor structure damage during reactive ion etching

Apparatus and method for obtaining stable matching networks for plasma tools for use in the plasma processing industry. In an RF plasma apparatus, running at a matched condition for a transmission line and the plasma tool matching network such that the input impedance at the input to the transmission line is different than that of the output impedance of an RF generator and such that when the plasma density in the plasma tool decreases the input impedance will match the output impedance of the generator.

Stable matching networks for plasma tools

Apparatus controls a wafer potential in a plasma system when the plasma is off to keep the wafer slightly negative at all times in order to reduce and eliminate the collection of charged particles on the wafer. The apparatus allows the wafer bias to be reduced to a small negative voltage and then holds that voltage. This greatly reduces the net positive flux to the wafer. A diode and a programmed power supply hold a minimum negative voltage on the back of the wafer electrode when the plasma density is decaying to zero.

Gettering of particles from an electro-negative plasma with insulating

Growing community of inventors

Newburgh, NY, United States of America

John H Keller