Plasma Physics Corporation

Other

Northwestern University

The State University of New York

John H Coleman

Tobin Jay Marks

Serge Luryi

Ronald J Tonucci

Charles M Fortmann

Semiconductor devices have device regions in which semiconductor properties such as spreading resistivity and its profile are significant. In making a p-type device region on a semiconductor wafer, an initial semiconductor device region is defined by a buried region, and an initial spreading resistivity profile is developed by annealing. After annealing, semiconductor device properties can be enhanced by removing a surface sub-region of the initial device region, and can be further improved by epitaxially growing thereon a monocrystalline film as an improved channel layer for FET devices. Such properties are relevant in MOS as well as bipolar devices.

Fabrication method for silicon-on defect layer in field-effect and bipolar transistor devices

In a gaseous glow-discharge process for coating a substrate with semiconductor material, a variable electric field in the region of the substrate and the pressure of the gaseous material are controlled to produce a uniform coating having useful semiconducting properties. Electrodes having concave and cylindrical configurations are used to produce a spacially varying electric field. Twin electrodes are used to enable the use of an AC power supply and collect a substantial part of the coating on the substrate. Solid semiconductor material is evaporated and sputtered into the glow discharge to control the discharge and improve the coating. Schottky barrier and solar cell structures are fabricated from the semiconductor coating. Activated nitrogen species is used to increase the barrier height of Schottky barriers.

Method of forming semiconducting materials and barriers

Structured materials for photonic devices, at wavelengths of X-ray, ultraviolet, visible, infrared and microwave radiation, can be made using layer growth techniques. Such a structure can be made layer by layer, by homogeneous deposition followed by localized modification for refractive index differentiation. Alternatively, the structure can be made by simultaneous growth of regions whose refractive index differs. The structures can be used as selective bandpass filters, and in photovoltaic solar cells, for example.

Fabrication methods and structured materials for photonic devices

Method of forming semiconductor materials and barriers

Method of forming semiconducting materials and barriers using a multiple

Method of forming semiconducting materials and barriers using a dual

Glow discharge method and apparatus useful for coating photoresponsive devices in the form of drums and plates are described. Improved photoresponsive devices using amorphous silicon which accepts a high surface voltage in the dark and discharges to a low residual voltage under illumination are also described.

Glow discharge method and apparatus and photoreceptor devices made

Glow discharge method and apparatus useful for coating electrophotographic photoreceptors in the form of drums and plates are described. Improved photoreceptors using amorphous silicon which accepts a high surface voltage in the dark and discharges to a low residual voltage under illumination are also described.

Photovoltaic junctions useful for solar energy conversion and for electrophotographic image formation are fabricated from a layer of amorphous boron in contact with a layer of amorphous silicon. The amorphous boron is preferably deposited at a reduced temperature on the amorphous silicon; or, alternatively, the amorphous silicon is deposited on a boron-bearing body previously deposited on an opaque metallic substrate.

Separation of U.sup.235 and U.sup.238 isotopes by converting a mixture of these isotopes to organic compounds or to silicon compounds and then irradiating the isotope compounds selectively to change their chemical (and/or physical) properties, thereby to facilitate separation. In a preferred embodiment of the invention the uranium compounds are selected from the group having a chemical moiety R bonded directly to the U atom, the U-R bond having a fundamental, overtone, or combination virbational absorption frequency between 900 and 1100 cm.sup.-1. The selected U mixture is then irradiated with a frequency-selective CO.sub.2 laser.

Growing community of inventors

Locust Valley, NY, United States of America

John H Coleman