Wisconsin Alumni Research Foundation

John H Booske

Nader Behdad

Hung Thanh Luyen

Paul Francis Laeseke

Susan Carol Hagness

Hans W Sollinger

Tausif Alam

Erik Aiken

Mohammad Mahdi Honari Kalateh

Zongtang Zhang

Yogesh B Gianchandani

Dane Morgan

Reid F Cooper

Ryan Matthew Jacobs

Steven S Gearhart

Keith J Thompson

Nathan Daniel Strachen

Zhe Yang

A 'localizable' systemic gene therapy system is provided substantially increasing the transfection efficiency of the gene vectors into targeted tissue cells and substantially reducing the escape of the gene vectors from the targeted tissue volume, such as would waste the vectors, promote undesired immune reactions, and/or incur prohibitive costs for the required dose of gene-containing virus vectors. In this regard, the invention provides a means to simultaneously achieve local electroporation and gene-containing vector injection in a portion of a vascularized organ. It includes two double-balloon catheters that create contained volumes in parallel blood vessels for the introduction of vectors with reduced loss along with electrodes providing electroporation of the cells in the same location where the vectors are injected.

In vivo gene therapy delivery procedure and device

A phase shift element includes an antenna, a first dielectric layer, a ground plane mounted to a first surface of the first dielectric layer, a reflecting circuit, and a single antenna-reflector line connected between the antenna and the reflecting circuit through the ground plane and the first dielectric layer. The antenna-reflector line is formed of a conducting material. The reflecting circuit is mounted to a second surface of the first dielectric layer. The first surface is opposite the second surface. The reflecting circuit is configured to reflect a signal received on the single antenna-reflector line from the antenna back to the antenna on the single antenna-reflector line. The reflecting circuit is further configured to be switchable between four different impedance levels that each provide a different phase shift when the signal is reflected by the reflecting circuit.

Electronically reconfigurable 2-bit phase quantization phased array element

A phase shift element includes an antenna, a first dielectric layer, a ground plane mounted to a first surface of the first dielectric layer, a reflecting circuit, and a single antenna-reflector line connected between the antenna and the reflecting circuit through the ground plane and the first dielectric layer. The antenna-reflector line is formed of a conducting material. The reflecting circuit is mounted to a second surface of the first dielectric layer. The first surface is opposite the second surface. The reflecting circuit is configured to reflect a signal received on the single antenna-reflector line from the antenna back to the antenna on the single antenna-reflector line. The reflecting circuit is further configured to be switchable between two different impedance levels that each provide a different phase shift when the signal is reflected by the reflecting circuit.

Electronically reconfigurable 1-bit phase quantization phased array element

In vivo therapeutic delivery procedure and device

A phase shift element includes a first dielectric layer, a conductive layer, a second dielectric layer, a conducting pattern layer, switches, and vertical interconnect accesses (vias). Each conductor of a plurality of conductors of the conducting pattern layer is orthogonal to two other conductors. Each switch is switchable between a conducting position and a non-conducting position. Each via is connected to a single conductor. The first conductive material reflects an electromagnetic wave incident on the conducting pattern layer and on the second dielectric layer. When a switch is in the conducting position, the switch electrically connects two conductors to each other through their respective vias. A plurality of different switch configurations of the switches provide a 2-bit phase quantization on the reflected electromagnetic wave relative to the electromagnetic wave incident on the conducting pattern layer when the electromagnetic wave is incident on the conducting pattern layer.

2-bit phase quantization phased array element

A waveguide includes a first double-ridge waveguide, a second double-ridge waveguide, and a polarization rotator. The first double-ridge waveguide provides a phase of an input electrical field rotated 0&#xb0; or 90&#xb0;. The second double-ridge outputs an electric field with a polarization that is perpendicular to a first polarization of the input electrical field. The polarization rotator is mounted between the first double-ridge waveguide and the second double-ridge waveguide and includes a frame, a dielectric layer, a first conducting pattern layer forming a first conductor and a second conductor, a first switch connected between the first conductor and the second conductor, a second conducting pattern layer forming a third conductor and a fourth conductor, and a second switch connected between the third conductor and the fourth conductor. Wherein a phase rotation of 90&#xb0; or &#x2212;90&#xb0; is provided by the polarization rotator based on a state of the first and second switch.

2-bit phase quantization waveguide

A multiple band phase shifter includes a first dielectric layer, a conductive layer, a second dielectric layer, and for each central operating frequency of a plurality of central operating frequencies, a switch, a plurality of vias, and a conducting pattern layer. Each via is formed of a conductive material that extends through the first dielectric layer, through a third dielectric material formed in and through the conductive layer, and through the second dielectric layer and is connected to a first throw arm or a second throw arm of the switch. The conducting pattern layer includes conductors electrically connected to a distinct via. An electric polarization of a reflected electromagnetic wave is rotated by 90 degrees when the switch is positioned in the first conducting position and the electric polarization of the reflected electromagnetic wave is rotated by &#x2212;90 degrees when the switch is positioned in the second conducting position.

Multiple band polarization rotating phased array element

A magneto-inductive transmit antenna is provided that includes a shield formed of a magnetic material, a magnetic field source mounted on a first side of the shield, and a coil wrapped around the shield to define a number of turns. The coil is configured to conduct a current therethrough. The magnetic material is configured to exhibit a change in permeability based on the current conducted through the coil when the current is conducted through the coil. The change in permeability is configured to modulate a magnetic field of the magnetic field source. The magnetic field is modulated relative to a second side of the shield opposite the first side when the permeability is changed.

Magneto-inductive transmitter with electrically modulated reluctance

A phase shifter includes a first dielectric layer, a switch mounted to the first dielectric layer, a conductive layer mounted to the first dielectric layer, a second dielectric layer mounted to the conductive layer, a conducting pattern layer mounted to the second dielectric layer, and a plurality of vias. The switch is switchable between a first conducting position and a second conducting position. Each via is connected between a first or a second throw arm of the switch and a conductor of the conducting pattern layer. When an electromagnetic wave incident on the phase shifter is reflected, an electric polarization of the reflected electromagnetic wave is rotated by &#xb1;90 degrees compared to an electric polarization of the incident electromagnetic wave based on a conducting position of the switch. The phase shifter can be used as one-bit spatial phase shifter to provide either 0&#xb0; or 180&#xb0; phase shift over wide bandwidths.

Polarization rotating phased array element

An electron emitter device is provided comprising a cathode comprising a conductive transition metal perovskite oxide comprising mobile conducting electrons exhibiting a conductivity of at least 10&#x3a9;-cmat room temperature, the transition metal perovskite oxide having a surface from which the mobile electrons are induced to emit upon receiving sufficient energy from an energy source; and an anode electrically coupled to the cathode and positioned to define an interelectrode conductive region between the anode and the cathode, onto which anode the emitted electrons are collected. The transition metal perovskite oxide may have formula SrBaVO. Related methods and devices based on the electron emitter device are also provided.

Perovskites as ultra-low work function electron emission materials

A tunable phase shifter is provided that includes a spatial phase shift element and a conducting sheet. The spatial phase shift element includes a dielectric substrate and a conductive antenna element mounted on the dielectric substrate. The conducting sheet is mounted a distance from the spatial phase shift element and configured to reflect an electromagnetic wave through the spatial phase shift element. The conductive antenna element is configured to radiate a second electromagnetic wave in response to receipt of the reflected electromagnetic wave. The distance between the conducting sheet and the spatial phase shift element can be changed to adjust a phase shift of the reflected electromagnetic wave.

Tunable spatial phase shifter

A method of bonding multiple layers is provided. The method includes the steps of stacking the multiple layers on top of each other and volumetrically heating the stack of multiple layers to a predetermined temperature. It is preferred that the stack is heated by electromagnetic induction.

Method of bonding a stack of layers by electromagnetic induction heating

A practical, low-cost and low hazard method and apparatus for the fabrication of ultra large scale integrated circuits is provided. Plasma source ion implantation (PSII) is employed for realizing required ultra-shallow doping junctions, while avoiding previous difficulties and costs associated with PSII of dopant containing plasmas generated from hazardous gases. The invention makes use of solid boron sources, such as boron carbide (B.sub.4 C), for p-type doping, and solid phosphorus sources, such as red phosphorus, for n-type doping. The solid dopant sources are both stable and relatively inexpensive. Thin layers of p-type or n-type material are deposited on the surface of a semiconductor substrate, such as of Si, by sputtering or vaporization of the solid dopant source material. PSII using a plasma generated from a non-reactive gas, such as argon, is then used to drive the deposited dopant atoms into the surface of the substrate. Deposition and implantation steps may be followed by sputter cleaning of the substrate, such as by use of an argon plasma, to remove any remaining film of dopant material from the substrate. A subsequent annealing step is used to heal the crystalline lattice of the substrate, and to diffuse any incidentally implanted argon ions from the substrate. To prevent deposition of impurities into the substrate as a result of argon sputtering of the PSII chamber walls, the walls may be coated with a thin film of B.sub.4 C prior to PSII processing.

Ultra-shallow junction semiconductor device fabrication

A microwave furnace having uniform power distribution via the induction of ergodic modes includes a base portion and a pair of planar spaced apart elongated sidewalls that extend upwardly from the base, with the distance between the sidewalls being within .+-.20% of the length of the sidewalls. A pair of arcuate end-walls are disposed at each end of the sidewalls with the end-walls having a radius of curvature within .+-.20% of one-half of the length of the sidewalls. A domed cover having a radius of curvature within .+-.20% of one-half of the length of the sidewalls rests atop the intermediate portion.

Growing community of inventors

McFarland, WI, United States of America

John H Booske