International Business Machines Corporation

Globalfoundries Inc.

Globalfoundries U.S. Inc.

John G Twombly

Anthony K Stamper

Jeffrey P Gambino

Robert K Leidy

Edward Crandal Cooney, Iii

Charles S Musante

Zhong-Xiang He

Christopher Vincent Jahnes

Eric Jeffrey White

William Joseph Murphy

Jeffrey C Maling

Bruce Walter Porth

Russell T Herrin

Dinh Dang

Thai Doan

George A Dunbar, Iii

Cody Soule

Vivekanand Kalaparthi

David Thomas

Michael Brigham

Structures for a through-silicon via and methods of forming a structure for a through-silicon via. The structure includes a substrate having a trench and surfaces that border the trench. The structure further includes a through-silicon via having a layer inside the trench. The layer is in direct contact with the surfaces of the substrate.

Liner-free through-silicon-vias formed by selective metal deposition

A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is moveable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.

Planar cavity MEMS and related structures, methods of manufacture and design structures

Planar cavity mems and related structures, methods of manufacture and design structures

Planar cavity Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structure are provided. The method includes forming at least one Micro-Electro-Mechanical System (MEMS) cavity having a planar surface using a reverse damascene process.

Structures and design structures for improved adhesion of protective layers of imager microlens structures are disclosed. A method of fabricating a semiconductor structure includes forming an interfacial region between a microlens and a protective oxide layer. The interfacial region has a lower concentration of oxygen than the protective oxide layer.

Imager microlens structure having interfacial region for adhesion of protective layer

Methods, structures, and design structures for improved adhesion of protective layers of imager microlens structures are disclosed. A method of fabricating a semiconductor structure includes forming an interfacial region between a microlens and a protective oxide layer. The interfacial region has a lower concentration of oxygen than the protective oxide layer.

Methods for improved adhesion of protective layers of imager microlens structures by forming an interfacial region

A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes patterning a wiring layer to form at least one fixed plate and forming a sacrificial material on the wiring layer. The method further includes forming an insulator layer of one or more films over the at least one fixed plate and exposed portions of an underlying substrate to prevent formation of a reaction product between the wiring layer and a sacrificial material. The method further includes forming at least one MEMS beam that is movable over the at least one fixed plate. The method further includes venting or stripping of the sacrificial material to form at least a first cavity.

Method of manufacturing a micro-electro-mechanical system (MEMS)

Growing community of inventors

Fairfax, VT, United States of America

John G Twombly