Chipscale, Inc.

Micro Technology Partners

Fei Microwave, Inc.

Quantic Industries, Inc.

John G Richards

Wendell B Sander

Hector Flores

Donald Paul Richmond, Ii

William David Fahey

David S Whang

Kenneth E Willis

Martin Gerald Richman

Hormoz M Motamedi

Hector H Flores

A packaging technique for electronic devices includes wafer fabrication of contacts that wrap down the inside surface of a substrate post. Inherently reliable contacts suitable for a variety of devices can be formed, via a simple fabrication process, with good wafer packing density. A trench is formed in the top surface of a substrate parallel to the edge of its electronic circuit. A gold beam wire extends from a connection point within the circuit into the trench. Unless an insulative substrate is used, the wire runs over an insulating layer that ends part way through the trench. After epoxy encapsulating the top of the substrate, it is back planed to form the bottom surface of the post. Then it is selectively back etched, to expose the bottom surface of the wire, to form the inside surface of the post, and to form the bottom surface of the finished device. A solderable lead wire runs from the exposed gold wire, down the inside surface of the post, and across its bottom. Sawing forms the outside surface of the post and completes the finished device without subsequent assembly. Alternatively, no post is used and the contact comprises an encapsulant protrusion, similarly formed in a silicon trench that is subsequently etched away. Gold wires run under the protrusion and may be covered by solderable metal, or a dense gold compression bond may be used. Optionally, the bottom of the finished device drops down to be co-planar with the contact bottoms, so as to conduct heat out of the device.

Wafer fabrication of inside-wrapped contacts for electronic devices

The fabrication of a resistor structure is described. A resistive region is formed over the top of a substrate. Trenches are formed from the top side of the substrate in scribe line regions where the wafer is to be separated to form resistor modules. Contact layers are formed over the top side of the substrate and are electrically coupled to each end of the resistive region, respectively. The contact layers are also formed over the sidewalls of the trenches. The wafer is separated through the trenches, creating resistor modules having sidewall contact regions.

Resistor fabrication

This invention discloses a method of fabricating an electroexplosive device which utilizes a semiconductor bridge as an ignition element. The semiconductor bridge is electrically connected to a metal header by a small, low resistance contact to the extension of bridge material and through an insulating silicon substrate to an eutectic bond created by gold plating on the metal header and the silicon. The second electrode of the bridge circuit is connected via wire bonds to one or two conducting pins which penetrate the metal header and are insulated by surrounding glass. A redundant connection via two conducting pins insulated from the header to one electrode of the semiconductor bridge allows a post assembly test of the integrity of the wire bonds, thereby increasing reliability of the device.

Semiconductor bridge explosive device

An electrical apparatus having a first substrate, a first metallic layer, a semiconductor device, a second metallic layer, and a metallic interconnecting structure is described. The first substrate is of a semiconductor material and has an upper region and a lower region. The substrate provides an electrical path between the upper region and the lower region. The first metallic layer is coupled to the lower region of the substrate. The first metallic layer provides a first external electrical connection. The semiconductor device has an upper region and a lower region. The second metallic layer is coupled to the lower region of the semiconductor device. The second metallic layer provides a second external electrical connection. The metallic interconnecting structure electrically couples the upper region of the first substrate to the upper region of the semiconductor device. A bridge apparatus is also described. In addition, a method of fabricating an electrical apparatus is described.

Electrical apparatus with a metallic layer coupled to a lower region of

A flange interface for wrap-around contact regions formed in fabricating semiconductor devices provides for a durable and reliable electrical bond. A first layer having a first material is formed over the first side of a wafer. A trench is formed from the second side of the wafer such that a portion of the first layer becomes exposed in the trench. A second layer having a second material is formed over the second side of the wafer such that a portion of the second layer contacts the portion of the first layer exposed in the trench. The wafer is separated through the trench. The trench may be formed by sawing the second side of the wafer in an area where the trench is to be formed. The wafer may then be etched such that the trench is formed.

Method for making a leadless surface mounted device with wrap-around

An electrical apparatus having a top and a bottom is described. A right side portion comprised of a first substrate of semiconductor material is provided. A left side portion of a second substrate of semiconductor material comprising an integrated circuit is provided. A middle portion between the right side portion and the left side portion is provided. The middle portion is comprised of an insulative coating. A metallic interconnecting structure is provided that electrically couples the first substrate of the right side portion to the integrated circuit of the left side portion. The metallic interconnecting structure extends over the insulative material of the middle portion. A top portion comprised of the insulative material is provided that covers the integrated circuit, the metallic interconnecting structure, the left side portion, the right side portion, and the middle portion. The top portion and the middle portion sandwich the metallic interconnecting structure. A substantially planar first metallic pad is provided for a first connection to external circuitry. The first metallic pad resides on the bottom of the right side portion. The first metallic pad provides a first polarity coupling to the integrated circuit. A method of fabricating the electrical apparatus is also described.

Fabricating a semiconductor with an insulative coating

Semiconductor fabrication with contact processing for wrap-around flange

Method of making a semiconductor device with a metallic layer coupled to

A monolithic semiconductor device that provides a diode having PIN diode characteristics. The diode has anode and cathode mesas having contacts in substantially the same plane to facilitate automatic bonding. One of the contacts is insulated from its associated mesa and has a conductive layer that extends between the mesas and through an insulating layer to make direct contact with the substrate, thereby isolating the flow of current from any intervening I regions. The conductive layer may include a portion of narrow cross section, to function as a fuse.

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San Jose, CA, United States of America

John G Richards