Agilent Technologies, Inc.

Miasole

Beijing Apollo Ding Rong Solar Technology Co., Ltd.

Other

University of Illinois

Lawrence Livermore National Security, LLC

Apollo Precision Fujian Limited

Hanergy Holding Group Ltd.

John Frederick Corson

Jayati Ghosh

Neil Mackie

Andreas N Dorsel

Kenneth Lawrence Staton

Glenda Choate Delenstarr

Ron Rulkens

Robert D Tas

Debra A Sillman

Weijie Zhang

Russell Alan Parker

Alex Austin

Chris Schmidt

Jochen Titus

Mats Larsson

Xiangyang Zhou

Robert Zubeck

Korhan Demirkan

Svetlana Shchegrova

Randy Dorn

Asit Rairkar

Ajay Saproo

Dan Vitkavage

Swati Sevanna

Nicholas Michael Sampas

Bo U Curry

Daniel R Juliano

Paul K Wolber

Eric M Leproust

Paul K Shufflebotham

Stanley P Woods

Bill J Peck

Srinka Ghosh

Vincenzo Lordi

Christian A Le Cocq

Patrick James Collins

Charles David Troup

Angus A Rockett

Scott D Connell

Joel Varley

Geordie Zapalac

Xiaoqing He

Andre B Chow

A method of manufacturing a photovoltaic structure includes forming a p-type semiconductor absorber layer containing a copper indium gallium selenide based material over a first electrode, forming a n-type cadmium sulfide layer over the p-type semiconductor absorber layer by sputtering in an ambient including hydrogen gas and oxygen gas, and forming a second electrode over the cadmium sulfide layer.

Hexagonal phase epitaxial cadmium sulfide on copper indium gallium selenide for a photovoltaic junction

A solar cell containing a plurality of CIGS absorber sublayers has a conversion efficiency of at least 13.4 percent and a minority carrier lifetime below 2 nanoseconds. The sublayers may have a different composition from each other.

Photovoltaic cell with high efficiency CIGS absorber layer with low minority carrier lifetime and method of making thereof

Photovoltaic cell with high efficiency cigs absorber layer with low minority carrier lifetime and method of making thereof

A photovoltaic cell includes a p-type copper-indium-gallium-selenide absorber layer, where a content of Cu, In, and Ga in a first portion of the p-type copper-indium-gallium-selenide absorber layer satisfies the equation Cu/(In+Ga)&#x2266;0.3, and where the content is measured in atomic percent.

Photovoltaic cell with copper poor CIGS absorber layer and method of making thereof

A method including directing a first radiation at a first copper-indium-gallium (CIG) sputtering target in a reactive copper indium gallium selenide (CIGS) sputtering process, detecting a first reflected radiation from the first CIG target and determining the amount of selenium poisoning of the first CIG target based on the first reflected radiation.

Method of sensing local sputtering target selenization

A solar cell includes a substrate, a protective layer located over a first surface of the substrate, a first electrode located over a second surface of the substrate, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode over the n-type semiconductor layer. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material, and the second electrode is transparent and electrically conductive. The protective layer has an emissivity greater than 0.25 at a wavelength of 2 &#x3bc;m, has a reactivity with a selenium-containing gas lower than that of the substrate, and may differ from the first electrode in at least one of composition, thickness, density, emissivity, conductivity or stress state. The emissivity profile of the protective layer may be uniform or non-uniform.

Protective layer for large-scale production of thin-film solar cells

A solar cell includes a substrate, a first electrode located over the substrate, where the first electrode comprises a first transition metal layer, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode located over the n-type semiconductor layer. The first transition metal layer contains (i) an alkali element or an alkali compound and (ii) a lattice distortion element or a lattice distortion compound. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material.

Method and apparatus for controllable sodium delivery for thin film photovoltaic materials

A method for designing an array is provided. In certain embodiments, this method includes grouping probes into a plurality of ranked groups of probes; and designing an array comprising the ranked groups of probes, wherein the array contains more replicates of probes in a higher ranked group as compared to probes of a lower ranked group of probes.

Biopolymeric arrays having replicate elements

Methods, systems and computer readable media for quantifying and removing offset bias signals in a chemical array data set having one or more channels. In one embodiment, for each channel of data in the data set, a first set of features is selected from the data set. Surface intensities are calculated for features in the first selected set of features and surface intensifies of features not in the first selected set are calculated from the calculated surface intensities. A second set of features is selected, the intensity values of which are within a range of correspondingly located surface intensity values defined by upper and lower threshold intensities. Secondary surface intensifies are calculated for features in the second selected set of features and secondary surface intensities for all other locations on the array that were not locations corresponding to the features having secondary surface intensities calculated therefore, are calculated. Feature intensities of the channel features are then corrected as a function of the secondary surface intensities.

Methods and systems for removing offset bias in chemical array data

Methods for producing data for a partially saturated pixel produced during scanning of a chemical array are provided. In general, an analog signal for a partially saturated pixel is sampled to obtain a set of non-saturated digital signals and a set of saturated digital signals. The saturated digital signals are then processed to produce data for the pixel. Also provided are computer program products comprising programming for performing the subject methods, and a chemical array scanner containing this programming. The invention finds use in a variety of different applications, including both genomics and proteomics applications.

Methods and compositions for assessing partially saturated pixel signals

Methods, systems and computer readable media for removing trends in signal intensity values from features on a chemical array. Inputted signal values from features on the array are surface fitted to calculate a surface approximation. The surface approximation is normalized and used to de-trend the signal intensity values from the features.

Methods and systems for detrending signal intensity data from chemical arrays

Methods for identifying feature boundary pixels are provided. In general, the subject methods involve evaluating a pixel signal to identify any difference in amplitude between a first part of the signal and a second part of the signal. If the difference is significant, the pixel signal may be indicated as a pixel representing a feature boundary. Also provided are systems and programming for performing the subject methods, and an array scanner containing these systems and programming.

Detection of feature boundary pixels during array scanning

Growing community of inventors

Mountain View, CA, United States of America

John Frederick Corson