Micron Technology Incorporated

Texas Instruments Corporation

Other

John Frederic Schreck

George B Raad

Phat C Truong

Brent Keeth

Terry R Lee

David J McElroy

Timmie M Coffman

Rahul Advani

Jeffrey K Kaszubinski

Mark E Tuttle

J Thomas Pawlowski

Nevil N Gajera

John R Wilford

David D Wilmoth

Mark Hiatt

Debra J Dolby

Jeff Koelling

Jon Morris

Rishad Omer

Tyler J Gomm

Kallol Mazumder

Scott Eugene Smith

Eric Booth

Todd A Dauenbaugh

Fabio Pellizzer

Dean A Klein

Brian M Shirley

Karthik Sarpatwari

Simon J Lovett

Harish Naga Venkata

Cliff Zitlaw

Roger D Norwood

Benjamin H Ashmore, Jr

Lingming Yang

Mansour Fardad

Dan Penney

Timothy B Cowles

Dong Pan

James S Rehmeyer

Cetin Kaya

Manzur Gill

Brian W Huber

Sung-Wei Lin

Tim M Coffman

John Howard MacPeak

Mark J Hiatt

Harvey J Stiegler

Eddie Hearl Breashears

Wayland B Holland

Pradeep L Shah

Mark Rogers Tuttle

Dennis R Robinson

David A Tatman

Chirag Desai

Shailesh R Kadakia

Phat C Troung

Harvey J Steigler

Gary L Howe

Richard A Bussey

Local input/output (LIO) lines may be used for precharging and equalizing the digit lines associated with a sense amplifier. The precharge device and equalization device of the associated sense amplifier may be omitted in some examples. In some examples, an equalization device may short the lines of a LIO line pair together. The LIO line pair may drive one or more pairs of digit lines to a precharge potential. Digit lines may be connected to the LIO line pair and driven to a midpoint potential in some examples.

Systems, apparatuses, and methods of using local input/output (LIO) lines for precharging and equalizing digit lines of sense amplifiers

In some examples, a main word line driver may include a transistor that is driven between an on state and a high resistance state by a signal based, at least in part, on a row address. In both states, the transistor may maintain a main word line in an inactive state. When in the high resistance state, the transistor may be overridden by a decoder that drives the main word line to an active state. In some examples, a main word line driver may include a transistor maintained in a high resistance state coupled in parallel with another transistor that may be driven between an on state and an off state by a signal based, at least in part, on a row address. When the other transistor is in the off state, the high resistance state transistor may be overridden by a decoder that drives a main word line to an active state.

Main word line drivers

Systems, methods and apparatus to read target memory cells having an associated reference memory cell configured to be representative of drift or changes in the threshold voltages of the target memory cells. The reference cell is programmed to a predetermined threshold level when the target cells are programmed to store data. In response to a command to read the target memory cells, estimation of a drift of the threshold voltage of the reference is performed in parallel with applying an initial voltage pulse to read the target cells. Based on a result of the drift estimation, voltage pulses used to read the target cells can be modified and/or added to account for the drift estimated using the reference cell.

Drift aware read operations

Components of sense amplifiers may share contacts that couple the components to a global line via a local line. In some examples, the components may be pull-down circuits of a same sense amplifier or pull-down circuits of adjacent sense amplifiers. The shared contact may include a transistor or a resistance between the local line and the global line. In some examples, the global line may be an RNL line. The transistor or resistance may reduce the impact of voltage across the components from affecting the global line and/or reduce the impact of voltage changes on the global line on the individual components.

Isolation of local lines of sense amplifiers

Methods, systems, and devices for storing and reading data at a memory device are described. A memory device may utilize one or more storage states to store data within a data word. The memory device may exhibit higher data leakage or more power consumption when storing or reading a first storage state compared to storing or reading one or more other storage states. In some cases, the memory device may generate a second data word corresponding to a first data word by modifying each symbol type of the first data word to generate a different symbol type for the second data word. A memory device may reduce the occurrence of a storage state associated with large data leakage, or high-power consumption, or both. Further, the memory device may generate and store an indicator indicating the transformation of a corresponding data word.

Data storage based on data polarity

Some embodiments include apparatus, systems, and methods having a base, a first die, a second arranged in a stacked with the first die and the base, and a structure located in the stack and outside at least one of the first and second dice and configured to transfer signals between the base and at least one of the first and second dice.

Signal delivery in stacked device

As described, an apparatus may include a memory cell corresponding to a memory address and an access line forming at least a portion of the memory cell. The apparatus may include a first decoder associated with a first delivery driver coupled to a first end of the access line and a second decoder associated with a second delivery driver coupled to another end of the access line.

Memory operation with double-sided asymmetric decoders

Embodiments of the disclosure are drawn to apparatuses and methods for content addressable memory (CAM) cells. Each CAM cell may include a comparator portion which stores a bit of information. Each CAM cell may also include a comparator portion, which compares an external bit to the stored bit. A group of CAM cells may be organized into a CAM register, with each CAM cell coupled in common to a signal line. Any of the CAM cells may change a voltage on the signal line if the external bit does not match the stored bit.

Apparatuses, systems, and methods for a content addressable memory cell and associated comparison operation

Techniques are provided for writing a high-level state to a memory cell capable of storing three or more logic states. After a sense operation performed by a first sense component and a second sense component, a digit line may be isolated from the first sense component and the second sense component. The high-level state may be stored in the memory cell, then a second state may be stored in the memory cell, in which the second state may be a mid-level state or a low-level state. The second state may be stored based on a write-back component identifying that the second state was stored in the memory cell before the write back procedure.

Write techniques for a memory device with a charge transfer device

Techniques are provided for sensing a signal associated with a memory cell capable of storing three or more logic states. To sense the memory cell (e.g., a signal associated with the memory cell), a charge may be transferred between a digit line and a node coupled with a plurality of sense components using a charge transfer device. Once the charge is transferred, at least some if not each of the plurality of sense components may sense the charge using one of a variety of sensing schemes. For example, the charge may be sensed by each sense component at a same time using a single fixed reference value, or at different times using different fixed reference values. Based on the charge being transferred or transferred with the node (e.g., using the charge transfer device) and each sense component sensing the charge, a logic state associated with the memory cell may be determined.

Sensing techniques using a charge transfer device

Apparatuses, systems, and methods for a content addressable memory cell with latch and comparator circuits

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Lucas, TX, United States of America

John Frederic Schreck