Versum Materials Us, LLC

Air Products and Chemicals, Inc.

John Francis Lehmann

Xinjian Lei

Jianheng Li

Raymond Nicholas Vrtis

Robert Gordon Ridgeway

William Robert Entley

Alan Charles Cooper

Manchao Xiao

Sergei Vladimirovich Ivanov

Charles G Coe

Guido Peter Pez

Matthew R MacDonald

Daniel Joseph Tempel

Rajiv Krishan Agarwal

Gennady Dantsin

William Jack Casteel

Charles Gardner Coe

Compositions for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the composition comprises at least one compound is selected from the group consisting of a siloxane, a trisilylamine-based compound, and a cyclic trisilazane compound.

Compositions and methods using same for deposition of silicon-containing film

Amino-functionalized cyclic oligosiloxanes, which have at least three silicon and three oxygen atoms as well as at least one organoamino group and methods for making the oligosiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-functionalized cyclic oligosiloxanes are also disclosed.

Organoamino-functionalized cyclic oligosiloxanes for deposition of silicon-containing films

Processes for depositing silicon-containing films (e.g., silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films) are performed using halidosilane precursors. Examples of halidosilane precursor compounds described herein, include, but are not limited to, monochlorodisilane (MCDS), monobromodisilane (MBDS), monoiododisilane (MIDS), monochlorotrisilane (MCTS), and monobromotrisilane (MBTS), monoiodotrisilane (MITS).

Processes for depositing silicon-containing films using halidosilane compounds and compositions

Processes for depositing silicon-containing films (e.g., silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films) are performed using halidosilane precursors. Examples of halidosilane precursor compounds described herein, include, but are not limited to, monochlorodisilane (MCDS), monobromodisilane (MBDS), monoiododisilane (MIDS), monochlorotrisilane (MCTS), and monobromotrisilane (MBTS), monoiodotrisilane (MITS). Also described herein are methods for depositing silicon containing films such as, without limitation, silicon, amorphous silicon, silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon carbonitride, doped silicon films, and metal-doped silicon nitride films, at one or more deposition temperatures of about 500&#xb0; C. or less.

Processes for depositing silicon-containing films using halidosilane compounds

Compositions and methods using same for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the composition comprises at least one compound is selected from the group consisting of a siloxane, an trisilylamine-based compound, an organoaminodisilane compound, and a cyclic trisilazane compound.

The method described herein provides a method for preparing a chlorinated silane at least one end product comprising SiHCl, SiHCl, and combinations thereof in molar yields of 50% or greater with respect to silane in the feed stream. The method described herein therefore provides an end product comprising the one or more chlorinated silanes by contacting reaction mixture comprising silane and hydrogen chloride with a catalyst at a temperature and time sufficient to provide the end product.

Method for making a chlorosilane

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Bethlehem, PA, United States of America

John Francis Lehmann