Lam Research Corporation

Novellus Systems Incorporated

John Floyd Ostrowski

Bryan L Buckalew

Robert Rash

Stephen J Banik

Gabriel Hay Graham

Alfred Bostick

Sean Wilbur

Steven T Mayer

David W Porter

Richard G Abraham

Jon Henri

Gary B Lind

Steven W Taatjes

An electroplating apparatus includes an electrode at the bottom of a chamber, an ionically resistive element with through holes arranged horizontally at the top of the chamber, with a membrane in the middle. One or more panels extend vertically and parallelly from the membrane to the element and extend linearly across the chamber, forming a plurality of regions between the membrane and the element. A substrate with a protuberance extending along a chord of the substrate and contacting a top surface of the element is arranged above a first region. An electrolyte flowed between the substrate and the element descends into the first region via the through holes on a first side of the protuberance and ascends from the first region via the through holes on a second side of the protuberance, forcing air bubbles out from a portion of the element associated with the first region.

Removing bubbles from plating cells

Removing bubbles from plating cell

The embodiments disclosed herein relate to methods and apparatus for promoting bubble-free circulation of processing fluids in a recirculation system. Certain disclosed techniques involve passive, mechanical valve designs that promote variable resistance to flow in a drain. Other techniques involve automated flow control schemes that utilize feedback from flow meters, level sensors, etc. to achieve a balanced and bubble-free flow. The disclosed embodiments greatly reduce the incorporation of gas into a processing fluid, in particular as the processing fluid returns from a processing cell to a reservoir.

Bubble and foam solutions using a completely immersed air-free feedback flow control valve

Disclosed herein are lipseal assemblies for use in an electroplating clamshell for engaging and supplying electrical current to a semiconductor substrate during electroplating, which include an elastomeric lipseal for engaging the semiconductor substrate during electroplating, and wherein upon engagement the elastomeric lipseal forms multiple radially-separated sealing contact surfaces with the substrate which substantially exclude plating solution from a peripheral region of the substrate. Said lipseal assemblies may also include one or more electrical contact elements for supplying electrical current to the semiconductor substrate during electroplating.

Multi-contact lipseals and associated electroplating methods

A heat shield employed in semiconductor processing apparatus comprises a high performance insulation that has low thermal conductivity, such as, below the thermal conductivity of still air over a wide range of temperatures utilized in operation of the apparatus. As an example, the thermal conductivity of the insulation may be in the range of about 0.004 W/m&#xb7;h to about 0.4 W/m&#xb7;h over a temperature range of about 0&#xb0; C. to about 600&#xb0; C. or more. The deployment of the high performance heat shield reduces the power consumption necessary for the heater by as much as 20% to reach a desired processing temperature as compared to a case of heater power consumption required to reach the same desired temperature without the shield. Further, the heat shield significantly reduces the amount of undesired depositions from gas-entrained constituents on components in the chamber of the apparatus, particularly below or beyond the heat shield, by as much as 90% since the temperature drop is as much as ten orders of magnitude difference.

Heat shield for heater in semiconductor processing apparatus

Methods and apparatus are used for triggering and controlling an initial induction period in which a substrate is immersed in an electrochemical bath prior to actual electrochemical processing. This is accomplished by sensing a change in cell potential upon immersion of the substrate or a counter electrode in an electrochemical bath. Appropriate logic then holds the cell potential or current at a fixed value for a defined delay period. After that period ends, the logic allows the cell potential or current to increase to a level where electrochemical processing begins.

Controlled induction by use of power supply trigger in electrochemical processing

A dynamic chuck for holding a semiconductor wafer or other substrate includes a plurality of clamping arms mounted radially about a central axis of rotation of the wafer or other substrate. Each of the arms is mounted such that it is free to pivot about a horizontal axis. As the chuck rotates the substrate, a centrifugal force acts on each of the arms, causing it to pivot about its axis of rotation and thereby forcing a holding surface of the arm against a peripheral edge of the substrate. The dynamic chuck is applicable to any type of device in which a semiconductor wafer or other substrate must be held in a centered positioned while it is being spun, including wafer cleaning and rinsing apparatus.

Growing community of inventors

Lake Oswego, OR, United States of America

John Floyd Ostrowski