Oregon State University

Hewlett-packard Development Company, L.p.

John F Wager, Iii

Randy Hoffman

Douglas A Keszler

Hai Q Chiang

David Hong

James Elmer Abbott, Jr

Greg Scott Long

Roberto A Pugliese

Kristopher Olsen

John M McGlone

Brady J Gibbons

E William Cowell, Iii

Arun K Agarwal

Benjamin L Clark

Stephen Horvath

Nicole L Dehuff

Dong Li

Rick Presley

Chris Knutson

William F Stickle

Paul D Keir

David Oregon State University Off Of Techn Transfer Hong

Hai Q Oregon State Universitys Off Of Techn Transfer Chiang

An amorphous thin metal film can comprise a combination of three metals or metalloids including: 5 at % to 90 at % of a metalloid selected from the group of carbon, silicon, and boron; 5 at % to 90 at % of a first metal selected from the group of titanium, vanadium, chromium, iron, cobalt, nickel, zirconium, niobium, molybdenum, ruthenium, rhodium, palladium, hafnium, tantalum, tungsten, osmium, iridium, and platinum; and 1 at % to 90 at % of cerium. The three elements may account for at least 50 at % of the amorphous thin metal film.

Amorphous thin metal film

An amorphous thin metal film can include a combination of metals or metalloids including: 5 at % to 74 at % of a metalloid selected from the group of carbon, silicon, and boron; 5 at % to 74 at % of a first metal; 5 at % to 74 at % of a second metal; and 5 at % to 70 at % of a dopant. The first and second metals can be independently selected from the group of titanium, vanadium, chromium, iron, cobalt, nickel, zirconium, niobium, molybdenum, ruthenium, rhodium, palladium, hafnium, tantalum, tungsten, osmium, iridium, or platinum, wherein the first metal and the second metal can be different metals. The dopant can be selected from the group of oxygen, nitrogen, or combinations thereof. The metalloid, first metal, second metal, and dopant can account for at least 70 at % of the amorphous thin metal film.

The present disclosure is drawn to a thermal inkjet printhead stack with an amorphous thin metal protective layer, comprising an insulated substrate, a resistor applied to the insulated substrate, a resistor passivation layer applied to the resistor, and an amorphous thin metal protective layer applied to the resistor passivation layer. The amorphous thin metal protective layer can comprise from 5 atomic % to 90 atomic % of a metalloid of carbon, silicon, or boron. The film can also include a first and second metal, each comprising from 5 atomic % to 90 atomic % of titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, or platinum. The second metal is different than the first metal, and the metalloid, the first metal, and the second metal account for at least 70 atomic % of the amorphous thin metal protective layer.

Thermal inkjet printhead stack with amorphous thin metal protective layer

An electronic structure comprising: (a) a first metal layer; (b) a second metal layer; (c) and at least one insulator layer located between the first metal layer and the second metal layer, wherein at least one of the metal layers comprises an amorphous multi-component metallic film. In certain embodiments, the construct is a metal-insulator-metal (MIM) diode.

Amorphous multi-component metallic thin films for electronic devices

A thin-film transistor includes a gate electrode, a gate dielectric disposed on the gate electrode, a channel layer, and a passivation layer. The channel layer has a first surface and an opposed second surface, where the first surface is disposed over at least a portion of the gate dielectric. The channel layer also has a first oxide composition including at least one predetermined cation. The passivation layer is disposed adjacent to at least a portion of the opposed second surface of the channel layer. The passivation layer has a second oxide composition including the at least one predetermined cation of the first oxide composition and at least one additional cation that increases a bandgap of the passivation layer relative to the channel layer.

Thin film transistors

Enhancement mode, field effect transistors wherein at least a portion of the transistor structure may be substantially transparent. One variant of the transistor includes a channel layer comprising a substantially insulating, substantially transparent, material selected from ZnO or SnO. A gate insulator layer comprising a substantially transparent material is located adjacent to the channel layer so as to define a channel layer/gate insulator layer interface. A second variant of the transistor includes a channel layer comprising a substantially transparent material selected from substantially insulating ZnO or SnO, the substantially insulating ZnO or SnObeing produced by annealing. Devices that include the transistors and methods for making the transistors are also disclosed.

Transistor structures and methods for making the same

A semiconductor device can include a channel including a zinc-indium oxide film.

Semiconductor device

Apparatus comprising a thin film transistor having passivation layer disposed adjacent to a second surface of said channel layer, wherein said passivation layer comprises one or more wide-bandgap dielectric materials.

Thin film transistor with a passivation layer

Enhancement mode, field effect transistors wherein at least a portion of the transistor structure may be substantially transparent. One variant of the transistor includes a channel layer comprising a substantially insulating, substantially transparent, material selected from ZnO, SnO, or InO. A gate insulator layer comprising a substantially transparent material is located adjacent to the channel layer so as to define a channel layer/gate insulator layer interface. A second variant of the transistor includes a channel layer comprising a substantially transparent material selected from substantially insulating ZnO, SnOor InO, the substantially insulating ZnO, SnO, or InObeing produced by annealing. Devices that include the transistors and methods for making the transistors are also disclosed.

Transistor structures

Transistor structures having a transparent channel

A transistor device includes a channel of p-type substantially transparent delafossite material. Source and drain contacts are interfaced to the channel. Gate dielectric is between a gate contact and the channel.

Transistor device having a delafossite material

Phosphor compositions of the formula Zn M X:Mn, wherein M is selected from the group consisting of the trivalent cations of Al, In, Ga, and mixtures thereof, and X is selected from the group consisting of S, Se, Te, and mixtures thereof are disclosed. Also disclosed are phosphor compositions of the formula, MX:Cu,L,A wherein M is selected from the divalent ions of Sr, Mg, Ca, Ba, X is selected from the group consisting of S, Se, Te, and mixtures thereof, and mixtures thereof, L is selected from the group consisting of the trivalent cations of the lanthanides, Al, In, Ga, Sc, and mixtures thereof, and A is selected from the alkali metal ions or mixtures thereof. Emission chromaticity of the phosphors is controlled by varying codopant concentrations. Electroluminescent devices comprising the phosphors also are disclosed.

Growing community of inventors

Corvallis, OR, United States of America

John F Wager, Iii