Raytheon Company

John F Mara, Jr

Mark E Russell

Russell W Hansen

Edward G Daly, Iii

Michael C Tipton

Gregory J Pietrangelo

A radio frequency circuit includes a first RF switch having a first common port coupled to an input port of the switch circuit and a first pair of branch ports and a second RF switch having a second common port coupled to an output port of the circuit and a second pair of branch ports. The radio frequency circuit further includes an RF propagation network having a first end coupled to a first one of said first pair of branch ports of said first RF switch and a second end coupled to a first one of said second pair of branch ports of said second RF switch. The radio frequency circuit further includes an RF termination having an impedance characteristic corresponding to an impedance characteristic of said first common port and having a first end coupled to a second one of said first pair of branch ports of said first RF switch and a second end coupled to a first reference potential.

Plural switch circuits having RF propagation networks and RF terminations

A gain control amplifier is shown to include a temperature compensation circuit and a feed forward gain control loop. With such an arrangement, a gain control amplifier is provided wherein variations of an output signal of the amplifier are minimized due to changing characteristics of the amplifier caused by ambient temperature variation or from a varying input signal level.

Gain control amplifier

A radio frequency (RF) amplifier circuit includes an input matching network having a first port coupled to an input port of the circuit. The RF amplifier circuit further includes a high electron mobility field effect transistor (HEMT) having source, gate and drain electrodes with the gate electrode coupled to the second port of the input impedance matching network and means, coupled between the source electrode and a DC reference potential, for providing inductive feedback to the source electrode of the HEMT. The RF amplifier circuit further includes an output matching network having a first port coupled to the drain electrode of the HEMT. The output matching network comprises a first RF propagation network having a first end coupled to the first port of the output matching network and a second end coupled to a first electrode of a capacitor. A second electrode of the capacitor is coupled to a second port of the output matching network. The RF amplifier circuit further includes a monolithic microwave integrated circuit amplifier having an input port coupled to the second port of the output matching network and having an output port coupled to an output port of the RF amplifier circuit.

Radio frequency amplifier circuit

A frequency multiplier is shown to include either a frequency doubler or a frequency tripler coupled to an amplifier with a temperature compensation circuit and a feed forward gain control loop. With such an arrangement, a frequency multiplier is provided wherein variations of an output signal of the frequency multiplier are minimized due to changing characteristics of the frequency multiplier caused by ambient temperature variation or from a varying input signal level.

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Nashua, NH, United States of America

John F Mara, Jr