Hampshire Instruments, Inc.

University of Rochester

John F Hoose

Robert David Frankel

Robert G Zambelli

James M Forsyth

John Michael Soures

Thomas L Duft

Joseph A Abate

Lisa Gregorka

Malcolm M Drummond

An x-ray lithography system is disclosed in which x-rays are generated by directing a high energy laser beam against a metal target to form an x-ray emitting plasma. The x-rays from the plasma are then directed through a mask towards a resist covered wafer to cause a patterned exposure on the wafer resist coating. The mask, the portion of the target which the laser beam strikes and the portion of the wafer to be exposed are all within an evacuated chamber. The laser, prior to entering the chamber, is split into two separate beams, each of which are focused and directed through a window in the side of the chamber towards the same spot on the target. Apparatus, including an air bearing, seal and positioner, is provided to move the target at periodic intervals. Similar apparatus is provided to move the wafer from exposure section to exposure section. The laser beam system includes a face pumped laser beam amplifier and unidirectional beam expanders to allow the maximum energy to be transferred to the laser beam by the amplifier. A series of two or more laser pulses are provided in order to maximize the energy obtained from the laser amplifier. A magnet and a membrane shield are also provided to prevent high energy particles and dust contaminants from the plasma from effecting the lithography process. A materials handling device is provided for moving wafers, targets and masks and an alignment system operating within the evacuated chamber, positions of the wafer with respect to the mask prior to the exposure thereof.

X-ray lithography system

A device used to test the features of a mask used in a semiconductor lithographic machine. The device includes an array of charge couple devices and an array of pinholes positioned above the charge couple devices. The array of pinholes includes a small pinhole opening for each of the charge couple devices in that array and the size of each opening is dependent upon the resolution of the mask features desired to be inspected. The array of pinholes and the array of charge couple devices are moved in unison in discrete steps, related to the size of the pinhole openings, across an area of the mask related to the center to center spacing of the charge couple devices of the charge couple device array. By reading the data of each of the charge couple devices after each step, a comparison can be made against data previously obtained from a known good mask and a determination can be made whether the mask under test is acceptable or flawed.

Lithographic system mask inspection device

A multibeam laser amplifier system is disclosed wherein a plurality of laser beams may be amplified to high power with high efficiency. The beams may then be directed upon a target such as a nuclear fusion fuel element, as in a laser fusion reactor. The system is made up of an array of dual, active mirror laser amplifier units. The laser beams are reflected between successively disposed ones of these units. The units are optically pumped by flash lamps which are arranged in close proximity to the reflective sides of the laser bodies in each unit.

Laser apparatus

Growing community of inventors

Rochester, NY, United States of America

John F Hoose