International Business Machines Corporation

John F Conway

Edward C Fredericks

Giorgio G Via

An apparatus and method for characterizing lithography imaging to quickly optimize a lithography process is described. The apparatus consists of two lithography masks for use with an optical stepper, ion-beam or x-ray lithography tool. The first mask is used for creating topography on the wafer substrate, and is patterned with groups of large elements arranged in orthogonal and angular directions. The second mask is used for defining a periodic pattern over the large elements. Preferably, the periodic pattern is in the same order of dimension as the critical element on the integrated circuit. A method is provided for characterizing lithography tools which do not have lithography masks such as an electron beam exposure tool.

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Sterling, VA, United States of America

John F Conway