Other

International Business Machines Corporation

John Edward Sheet, Ii

Todd Alan Christensen

William Paul Hovis

Karl Robert Erickson

Richard Lee Donze

Jon Robert Tetzloff

An apparatus for measuring a structural characteristic between a polysilicon shape and a silicon area. The apparatus for measuring a structural characteristic between a polysilicon shape and a silicon area comprises the silicon area, and a plurality of polysilicon shapes each having a unique orientation relative to the silicon area wherein each of the polysilicon shapes is formed having an angle less than or equal to a critical angle. The critical angle is an angle at or below which a sidewall spacer no longer is formed on a polysilicon shape, thereby causing the polysilicon shape to short circuit to an underlying portion of the silicon area by way of a silicide bridge.

Electrical open/short contact alignment structure for active region vs. gate region

The present invention is a decoupling capacitor for an integrated circuit. The integrated circuit has a final metal layer which includes a power bus. The decoupling capacitor comprises a dielectric film disposed over the final metal layer and a conductive film disposed over the dielectric layer, whereby capacitance may be provided in the dielectric layer.

Integrated circuit having integral decoupling capacitor

Growing community of inventors

Zumbrota, MN, United States of America

John Edward Sheet, Ii