Philips Lumileds Lighting Company LLC

Koninklijke Philips Corporation N.v.

Lumileds LLC

Lumileds Lighting U.s., LLC

Lumileds Holding B.v.

Philips Lumileds Lights Co., LLC

Koninklijke Philips Electronics N.v.

John Edward Epler

Michael Ragan Krames

Nathan Fredrick Gardner

Michael David Camras

Paul Scott Martin

Michael Jason Grundmann

Werner K Goetz

Jonathan J Wierer

Sungsoo Yi

James Gordon Neff

Byung-Kwon Han

Costas Dimitropoulos

Melvin Barker Mclaurin

Oleg Borisovich Shchekin

Stefano Schiaffino

Daniel Alexander Steigerwald

Frank Michael Steranka

Steven Paolini

Aurelien Jean Francois David

Oscar Arturo Chao Pujol

Gerard Harbers

Serge J Bierhuizen

Grigoriy Basin

Jonathan J Wierer, Jr

Rajwinder Singh

James Chinmo Kim

Mark A Pugh

Qi Ye

Hanmin Zhao

Tal Margalith

Nathan Frederick Gardner

Mari Holcomb

Gerd O Mueller

Regina B Mueller-Mach

Ling Zhou

Rafael Ignacio Aldaz

Gregory W Eng

Patrick Nolan Grillot

Franklin J Wall, Jr

Franklin Joseph Wall

M George Craford

Frederic Dupont

Frédéric Georges Michel Dupont

Aurelien J F David

Francisco Alexander Leon

Melvin Barker McLaurin

James G Neff

Aurelien JF David

Michael R Krames

Mark Pugh

Michael Krames

Steve Paolini

Oleg B Shchekin

Techniques, devices, and systems are disclosed and include LEDs with a first flat region, at a first height from an LED base and including a plurality of epitaxial layers including a first n-layer, a first active layer, and a first p-layer. A second flat region is provided, at a second height from the LED base and parallel to the first flat region, and includes at least a second n-layer. A sloped sidewall connecting the first flat region and the second flat region is provided and includes at least a third n-layer, the first n-layer being thicker than at least a portion of third n-layer. A p-contact is formed on the first p-layer and an n-contact formed on the second n-layer.

Micro light emitting devices

Embodiments of the invention include a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region. A contact disposed on the p-type region includes a transparent conductive material in direct contact with the p-type region, a reflective metal layer, and a transparent insulating material disposed between the transparent conductive layer and the reflective metal layer. In a plurality of openings in the transparent insulating material, the transparent conductive material is in direct contact with the reflective metal layer.

Contact for a semiconductor light emitting device

Techniques, devices, and systems are disclosed and include LEDs with a first flat region, at a first height, including a plurality of epitaxial layers such as a first n-layer, a first p-layer, and a first active layer. A second flat region at a second height and parallel to the first flat region includes at least a second n-layer. Sloped sidewalls connect the first flat region and the second flat region and include at least a third n-layer. The p-layer of the first flat region is thicker that at least a portion of the third region. A p-contact is formed on the first p-layer and an n-contact is formed on the second n-layer.

Micrometer scale light emitting diode displays on patterned templates and substrates

The structural characteristics of the light-exiting surface of a light emitting device are controlled so as to increase the light extraction efficiency of that surface when the surface is roughened. A light emitting surface comprising layers of materials with different durability to the roughening process exhibits a higher light extraction efficiency than a substantially uniform light emitting surface exposed to the same roughening process. In a GaN-type light emitting device, a thin layer of AlGaN material on or near the light-exiting surface creates sharper features after etching compared to the features created by conventional etching of a surface comprising only GaN material.

Light extraction using feature size and shape control in LED surface roughening

A uLED and method for regrowth with thinner deposition on sidewall are disclosed. The uLED and method include a growth substrate including flat first and second regions, where the growth substrate is thicker in the first region as compared to the second region, and a third region of sloped sidewalls connecting the first and second regions, the topography forming a regular geometric pattern, a plurality of semiconductor epitaxial layers covering the first, second, and third regions including at least a p-n junction layer including a light emitting active region of direct bandgap semiconductor, sandwiched between n-type and p-type layers, each of the plurality of semiconductor epitaxial layers being thicker on the first and second regions as compared to the corresponding semiconductor epitaxial layers on the third region, and a plurality of electrical contacts forming an anode and cathode on part of the first and second regions, respectively.

A device comprising a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region is disclosed. The device comprises a porous region. The device comprises a first layer disposed between the light emitting layer and the porous region. The device comprises a mask layer disposed between the porous region and the first layer. The device comprises a plurality of openings formed in the mask layer.

Light emitting device including porous semiconductor

Methods and apparatus are described. An apparatus includes a hexagonal oxide substrate and a III-nitride semiconductor structure adjacent the hexagonal oxide substrate. The III-nitride semiconductor structure includes a light emitting layer between an n-type region and a p-type region. The hexagonal oxide substrate has an in-plane coefficient of thermal expansion (CTE) within 30% of a CTE of the III-nitride semiconductor structure.

Light emitting device with improved extraction efficiency

A device includes a substrate () and a III-nitride structure () grown on the substrate, the III-nitride structure comprising a light emitting layer () disposed between an n-type region () and a p-type region (). The substrate is a RA0(MO)where R is one of a trivalent cation: Sc, In, Y and a lanthanide; A is one of a trivalent cation: Fe (III), Ga and Al; M is one for a divalent cation: Mg, Mn, Fe (II), Co, Cu, Zn and Cd; and n is an integer&#x2265;1. The substrate has an inplane lattice constant a. At lease one III-nitride layer in the III-nitride structure has a bulk lattice constant asuch that [(|a&#x2212;a|)/a]*100% is no more than 1%.

III-nitride light emitting device with a region including only ternary, quaternary, and/or quinary III-nitride layers

A method according to embodiments of the invention includes positioning a flexible film () over a wafer of semiconductor light emitting devices, each semiconductor light emitting device including a semiconductor structure () including a light emitting layer sandwiched between an n-type region and a p-type region. The wafer of semiconductor light emitting devices is bonded to a substrate () via the flexible film (). After bonding, the flexible film () is in direct contact with the semiconductor structures (). The method further includes dividing the wafer after bonding the wafer to the substrate ().

Method of bonding a substrate to a semiconductor light emitting device

A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure is disposed between a window layer and a light-directing structure. The light-directing structure is configured to direct light toward the window layer; examples of suitable light-directing structures include a porous semiconductor layer and a photonic crystal. An n-contact is electrically connected to the n-type region and a p-contact is electrically connected to the p-type region. The p-contact is disposed in an opening formed in the semiconductor structure.

Semiconductor light emitting device including a window layer and a light-directing structure

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San Jose, CA, United States of America

John Edward Epler