Shipley Company LLC

Rohm & Haas Electronic Materials LLC

John E Schemenaur

Craig S Allen

Marc Langlois

Rajan Hariharan

Jud Ready

Trifon Tomov

Jan Tzyy-Jiuan Hwang

David D Senk

Xiaodong Hu

Maria Anna Rzeznik

John P Cahalen

Structures including a capacitor dielectric material disposed on the surface of an electrode suitable for use in forming capacitors are disclosed. Methods of forming such structures are also disclosed.

Capacitor structure

Electrically resistive material including platinum and from about 5 and about 70 molar percent of iridium, ruthenium or mixtures thereof, calculated based on platinum as 100%, are disclosed.

Resistive materials

Electrically resistive material including platinum and from about 5 and about 70 molar percent or iridium, ruthenium or mixtures thereof, calculated based on platinum as 100%, are disclosed.

Disclosed is a resistor structure for embedding in a dielectric material including a thin film resistive material disposed on a surface of a conductive layer wherein the surface has an isotropic surface roughness having a Rz (din) value of 3 to 10 &mgr;m and a peak-to-peak wavelength of 2 to 20 &mgr;m.

Resistor structure

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Marlborough, MA, United States of America

John E Schemenaur