Hughes Aircraft Company

John E Jensen

Lee W Tutt

Leroy J Miller

Michael J Little

Frederick G Yamagishi

J David Margerum

Jennifer J Zinck

Michael N Ernstoff

William R Byles

Yat-Shir Lee

Paul Y Hsieh

Damodaran Rajavel

A metalorganic arsenic source comprising R.sub.3-m AsH.sub.m, where R is an organic radical selected from the group consisting of C.sub.n H.sub.2n+1 and C.sub.n H.sub.2n-1, where n ranges from 1 to 6, and where m is 1 or 2, such as tert-butylarsine (t-BuAsH.sub.2), is useful in terminating a silicon surface with arsenic without carbon contamination, thereby permitting subsequent growth of high quality ZnSe. Use of this metalorganic arsenic source allows the full potential of the metalorganic molecular beam epitaxy (MOMBE) deposition technique, which has demonstrated superior flux control than that achieved by MBE, to be realized in the heteroepitaxy of HgCdTe on silicon substrates. Other metalorganic deposition procedures, such as MOVPE, may also be employed in the practice of the invention.

Method of growth of II-VI materials on silicon using As passivation

An optical cement system having an index of refraction of 1.50 or less, which can be used to bond pieces of optical quality glass during the preparation of devices. The surfaces of the glass pieces to be bonded are treated with an organosilane to produce activated sites, to which the adhesive forms a chemical bond. The adhesive is prepared by mixing together a transparent polymerizable monomer having a refractive index of 1.50 or less, a thickener, and an initiator. The adhesive is flowable, and its consistency is determined by the nature of the thickener. A layer of the adhesive is placed between the pieces of organosilane-treated glass, and polymerized by ultraviolet light or other energy, bonding the pieces of glass together with an adhesive having a refractive index less than that of the glass.

Optical adhesive system having low refractive index

A mercury compound such as mercury telluride or mercury cadmium telluride is deposited upon a substrate by chemical vapor deposition, with dissociation of the organic compounds accelerated by laser energy. The mercury-containing compound is preferably divinylmercury, which dissociates under intense light of 248 nanometers wavelength to deposit mercury in combination with the codeposited element. The laser-assisted chemical vapor deposition is accomplished at 100.degree. C. to 195.degree. C., preferably 165.degree. C., without the deposition of carbon contaminants.

Laser and thermal assisted chemical vapor deposition of mercury

High purity gold films are photochemically deposited on substrates from the gold containing compound (CH.sub.3).sub.2 Au[CH(COCF.sub.3).sub.2 ]. A vapor of the gold containing organometallic compound, possibly mixed with a carrier gas, is flowed over the surface of the substrate, which is at 0.degree. C. to 160.degree. C., and preferably at ambient temperature. Photodissociation is induced with ultraviolet light, inasmuch as the organometallic compound is strongly absorbing in the range of from about 300 to 340 nanometers. Substantially no organic fragments are deposited upon the surface, so that the deposited gold film is of high purity.

Photochemical deposition of high purity gold films

A method for depositing GaAs on a substrate is disclosed, involving applying a thin liquid film of a gallium-arsenic complex solution to the substrate and evaporating arsenide complex. The gallium-arsenic complex is selected from the group of complexes having the formula X.sub.3 GaAsR.sub.3 where X is chlorine, bromine, iodine, phenyl, methyl or trifluoromethyl and R is by hydrogen, phenyl, benzyl, methyl or trifluoromethyl. The thin solid film is irradiated with ultraviolet light at a sufficient wavelength and of a sufficient intensity to photochemically convert the gallium-arsenic complex to GaAs.

Method for forming gallium arsenide from thin solid films of

A number of alkyl and alkoxy-substituted ortho-cyanophenyl biphenylcarboxylate esters have been prepared for use as components for nematic liquid crystal mixtures which can be used in homeotropically aligned, field effect display devices or in dynamic scattering displays. These materials have large negative dielectric anisotropies and high birefringence.

Ortho-cyanophenyl biphenylcarboxylate liquid crystal esters and mixtures

This invention is directed to liquid crystal mixtures which have an extended operating range and require a low operating voltage. They are white in color and stable to atmospheric oxygen, moisture, and light. Because of their superior properties, they are useful in electro-optical displays, especially in liquid crystal watches and pocket-size calculators.

Liquid crystal mixtures for electro-optical display devices

A liquid crystal device biased by an alternating current having a predetermined frequency higher than the dispersion frequency of the liquid crystal material. The liquid crystal device exhibits inherent capacitance across its input terminals which is resonated by an inductor to result in a higher bias current and reduction of image smear of images displayed by such device.

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Newbury Park, CA, United States of America

John E Jensen