Motorola Corporation

John E Holmes

Rudy Michael Emrick

Steven James Franson

Bruce Bosco

Stephen Kent Rockwell

Kenneth V Buer

David W Corman

A packaging structure () is provided having a hermetic sealed cavity for microelectronic applications. The packaging structure () comprises first and second packaging layers () forming a cavity. Two liquid crystal polymer (LCP) layers () are formed between and hermetically seal the first and second packaging layers (). First and second conductive strips () are formed between the LCP layers () and extend into the cavity. An electronic device () is positioned within the cavity and is coupled to the first and second conductive strips ().

Hermetic cavity package

In one embodiment, an improved transceiver assembly for a vehicle capable of detecting potentially hazardous objects is disclosed. The transceiver assembly comprises a tapered slot feed antenna for generating a beam and for detecting the beam as reflected from the potential hazards. The antenna is formed in or on a housing which also contains a parabolic dish that oscillates to sweep the beam of radiation towards the potential hazards outside of the vehicle. In a preferred embodiment, approximately 77 GHz radiation is generated from and detected by the antenna. The antenna is preferably formed on a printed circuit board (PCB) (substrate), which can include additional circuitry necessary to operate the antenna, and which is preferably mounted at an acute angle with respect to the housing to direct the beam at the parabolic dish.

Tapered slot feed for an automotive radar antenna

A semiconductor structure includes a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material, and a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material. A composite transistor includes a first transistor having first active regions formed in the monocrystalline silicon substrate, a second transistor having second active regions formed in the monocrystalline compound semiconductor material, and a mode control terminal for controlling the first transistor and the second transistor.

Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same

High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Once such a structure is built, a high electron mobility transistor (HEMT) or a heterojunction bipolar transistor (HBT) can be constructed on the structure. A HEMT or HBT of the above structure can then be used in a switch or in an amplifier.

Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates

An extremely broad band high power termination (10) for microwave and millimeter frequency amplifiers combines a standard resistive low frequency termination (15) with a broad band high frequency absorptive element (13) using an absorptive material such as Eccosorb. A mid-band matching network (14) is provided between the resistive termination (15) and the Eccosorb absorptive element (13). The Eccosorb absorbs the energy of the higher microwave frequencies while the resistor absorbs energy at low frequencies. Accordingly, a much higher power handling capability in a compact planer environment is achieved. This termination (10) is suitable use for use in K-band power amplifier combiners (30) that require high isolation and high power handling capability of the isolated ports (35).

High power broadband termination for k-band amplifier combiners

A method (140) for tuning millimeter-wave FET amplifiers (20) during manufacture, through the application (144) of a gate bias voltage (52) so as to tune the FET (22) of the amplifier (20) to match an input circuit (24), and through the application (146) of a drain bias voltage (74) so as to tune the FET (22) of the amplifier (20) to match an output circuit (26), then measuring (150) the frequency response of the amplifier (20). This tuning method (140) is repeated (152) until a predetermined frequency response has been achieved. Once achieved, the predetermined frequency response is realized (154) by permanently fixing the gate bias voltage (52) and the drain bias voltage (74) at the determined values. This iterative method (140) of tuning amplifiers (20) is then repeated for all amplifiers (20) to be tuned.

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Scottsdale, AZ, United States of America

John E Holmes