Xerox Corporation

John E Epler

Thomas L Paoli

Robert D Burnham

David W Treat

Harlan Forrest Chung

Thomas L Paell

In situ removal of selected or patterned portions of semiconductor layers is accomplished by induced evaporation enhancement to form reversed bias current confinement structures in semiconductor devices, such as heterostructure lasers and array lasers.

Buried reverse bias junction configurations in semiconductor structures

The technique of induced evaporation enhancement is used in MOCVD to accomplish geometrical variations via atomic level removal or thinning or negative growth techniques in situ during or after epitaxial growth thereby varying optical and electrical properties of fabricated semiconductor structures during growth. Among the structures capable of being fabricated are three dimensional buried heterostructures, transparent window lasers, multiple wavelength array lasers, index guided and antiguided mechanisms and transparent optical waveguide structures for optical signal coupling in integrated circuitry.

Method of fabricating semiconductor structures via photo induced

In situ removal of selected or patterned portions of quantum well layers is accomplished by photo induced evaporation enhancement to form quantum wire, patterned quantum wire and multiple quantum wires in a semiconductor structure.

Quantum wire fabrication via photo induced evaporation enhancement

Quantum fabricated via photo induced evaporation enhancement during in

In situ geometrical and stoichiometric properties of deposited films are brought about by employing a scanned irradiation source directed to a spot which is scanned across the growth surface in a chemical va

Method of in situ stoiciometric and geometrical photo induced

A quantum wire in a groove in a semiconductor layer emits coherent light in a semiconductor laser structure. Linear array, vertical array and two-dimensional array multiple quantum wire semiconductor laser structures are also embodiments of the quantum wire in a semiconductor layer groove. Optical waveguides and reverse bias junctions can also be formed with the quantum wire semiconductor laser structures.

Quantum wire semiconductor laser

In situ removal of selected or patterned portions of quantum well layers is accomplished by photo induced evaporation enhancement to form quantum wire and multiple quantum wires in a semiconductor laser structure.

Method of fabricating quantum wire semiconductor laser via photo induced

In situ removal of selected or patterned portions of semiconductor layers is accomplished by induced evaporation enhancement to form patterned buried impurity layers in semiconductor devices, such as heterostructure lasers and array lasers, which function as buried impurity induced layer disordering (BIILD) sources upon subsequent annealing. These layers may be formed to either function as buried impurity induced layer disordering (BIILD) sources or function as a reverse bias junction configuration of confining current to the active region of a laser structure. Their discussion here is limited to the first mentioned function.

Buried disordering sources in semiconductor structures employing photo

In situ evaporation of selected surface regions or layers of compound semiconductors is accomplished without breaking the growth system environment employing photo induced evaporation enhancement in chemical vapor deposition epitaxy. Intense radiation from an energy source desorbs or causes evaporation of consecutive monolayers of atoms or combined atoms from the surface crystal by thermal evaporation. The desorbed atoms from the growth surface are removed atomic layer by atomic layer in a fairly uniform and systematic manner and may be characterized as 'monolayer peeling' resulting in a morphology that is sculpturally smooth and molecularly continuous. In this sense, the method of this invention is analogous to erasing or the etching of crystal material and is the antithesis to laser deposition patterning wherein erasure after growth or reduced rate of growth during growth provide 'negative growth patterning'. In principal, then, this patternable negative growth process is coupled with a positive growth process for providing selective thinning regions of semiconductor layers in three dimensional crystal structures limited only by the functional capabilities of the growth reactor. Selective monotonic increasing and decreasing film thickness in situ can be accomplished while beam illumination remains stationary for a predetermined period of time with exposure of the growth surface accomplished through a patterned mask or, alternatively, while the beam spot or multiple beam spots are modulated and scanned across the growth surface of the film.

Method of in situ photo induced evaporation enhancement of compound thin

A novel energy beam induced layer disordering (EBILD) process is used to (a) locally melt in a scanned pattern regions of a solid state semiconductor heterostructure to produce an alloy of intermediate composition having different optical properties and/or (b) incorporating significantly large amounts of an impurity, present in an encapsulation surface layer of a solid state semiconductor heterostructure, into regions of the heterostructure via absorption of the impurity into liquid alloy melt to form regions having different optical and/or electrical properties and (c) thereafter optionally applying IID to enlarge or extend the disordered/as-grown boundaries of the initially melted region. As a direct write analogue to surface initiated impurity induced disordering (IID), EBILD is a flexible and viable process with high importance for continuous reproducibility and high yield in the fabrication of optoelectronic devices and thin film electronic and optoelectronic circuitry. Characterized in its simplest terms, the method of impurity incorporation contemplated by this invention provides such incorporation from a solid phase impurity source using an energy beam liquid phase technique to bring about absorption of the impurity with underlying constituents in a desired pattern to produce regions that may be disordered and possess different electrical properties or optical properties or both compared to regions not part of the scanned pattern.

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Cupertino, CA, United States of America

John E Epler