University of California

Calient Networks, Inc.

Leland Stanford Junior University

Intel Corporation

USA As Represented by Secretary of the Navy

Honeywell G.m.b.h.

Kddi R&d Laboratories, Inc.

Aerius Photonics LLC

Hewlett-packard Company

California Institute of Technology

The State University of New York

Ciena Corporation

The United States of America

Calient Technologies, Inc.

Solus Micro Technologies, Inc.

John E Bowers

Roger Jonathan Helkey

Ali Shakouri

Xuezhe Zheng

Justin Norman

Roger Jonathon Helkey

Herbert J Shaw

Arthur Charles Gossard

David Edward Welsh

Steven A Newton

Aaron Roe Hawkins

Daehwan Jung

Gordon S Kino

Noel C MacDonald

Jock T Bovington

Daniel Jacob Blumenthal

Alexander W Fang

Hyundai Park

Dubravko I Babic

Shifu Yuan

Matthew Sysak

Tony Walter

Robert Kehl Sink

Dan Blumenthal

James R Sechrist

Richard O Jones

Charles Matthew Corbalis

Kunal Mukherjee

Joseph L Schmit

Jonathan Charles Geske

Peter Hunt

Masashi Usami

Michael MacDougal

Adrian Keating

Ryo Inohara

Alan Mar

Kohsuke Nishimura

Chen Shang

Yating Wan

Martijn Heck

Jennifer Selvidge

Judy Karin

Zhaoyang Hu

Hsu-Feng Chou

Steven P DenBaars

Douglas Duane Coolbaugh

Mario J Paniccia

Robert G Anderson

Bin Liu

John Heck

Kerry J Vahala

Jerry R Meyer

Igor Vurgaftman

Behzad M Moslehi

Long Yang

Jared Bauters

Kevin J White

Tin Komljenovic

Kevin Seichi Yamada

Jonathan Klamkin

James Joseph Dudley

Scott A Diddams

Michael J Little

Oded Cohen

Moshe Tur

Douglas La Tulipe

Joseph W Goodman

Jonathon Barton

John Jeffrey Lyon

Scott Brian Papp

Kent W Carey

Gerald L Leake, Jr

John Matthew Chong

Seung Bok Lee

Chandrasekhar Pusarla

Eric John Stanton

Qi Chen

Robert C Anderson

Garrett Cole

William Charles

Herbert Kroemer

Kartik A Srinivasan

Yoel Shetrit

Patrick Abraham

Paul Wills

Bart Erwin

David Kinghorn

Herbert Paul Koenig

Alexander Spott

Christopher J LaBounty

Songtao Liu

Boo-Gyoun Kim

Michael Davenport

Paolo Pintus

Siddharth Jain

Duanni Huang

Ran Feldesh

Michael Geva

Daniel Abraham Tauber

Joshua M O Zide

A quantum dot (QD) laser comprises a semiconductor substrate and an active region epitaxially deposited on the semi-conductor substrate. The active region includes a plurality of barrier layers and a plurality of QD layers interposed between each of the plurality of barrier layers. A net compressive strain associated with the plurality of QD layers is maintained below a maximum allowable strain to prevent formation of misfit dislocations within the active region of the QD laser.

Quantum dot lasers and methods for making the same

An epitaxial structure includes a semiconductor substrate, a dislocation blocking layer; and one or more active layers.

Dislocation glide suppression for misfit dislocation free heteroepitaxy

A photonic integrated circuit (PIC) includes a semiconductor substrate, one or more passive components, and one or more active components. The one or more passive components are fabricated on the semiconductor substrate, wherein the passive components are fabricated in a III-V type semiconductor layer. The one or more active components are fabricated on top of the one or more passive components, wherein optical signals are communicated between the one or more active components via the one or more passive components.

Monolithic integrated quantum dot photonic integrated circuits

There is set forth herein a method including a substrate; a dielectric stack disposed on the substrate; one or more photonics device integrated in the dielectric stack; and a laser light source having a laser stack including a plurality of structures arranged in a stack, wherein structures of the plurality of structures are integrated in the dielectric stack, wherein the laser stack includes an active region configured to emit light in response to the application of electrical energy to the laser stack.

Photonics structure with integrated laser

Reconfigurable non-reciprocal integrated-optics-based devices are disclosed. The non-reciprocal devices include: a phase-sensitive device, such as a microring waveguide; a magneto-optic layer; and an electromagnet. These elements are operatively coupled such that a magnetic field generated by current flow through the electromagnet gives rise to a non-reciprocal phase shift in the phase-sensitive device. The non-reciprocal phase shift leads to a difference in the way that a light signal travels in the forward and backward directions through one or more bus waveguides that are operatively coupled with the phase-sensitive element. The non-reciprocity is reversible by reversing the direction of drive current flow in the electromagnet, which enables the inter-port connectivity of the ports of these bus waveguides to be reconfigured based on the direction of the drive current flow. Examples of reconfigurable isolator and circulator embodiments are described.

Reconfigurable integrated-optics-based non-reciprocal devices

A silicon-photonic integrated circuit comprising a direct-bandgap-semiconductor-based active optical device that is epitaxially grown on an indirect-bandgap SOI substrate () is disclosed. The structure of the active optical device includes an active region () having quantum dots () made of InGaAs that are embedded in one or more confinement layers (n-InP, p-InP), where the bandgap of the confinement layers is higher than that of the quantum dots. Further the confinement-layer material is preferably lattice matched to the quantum dot material in order to suppress associated crystalline defects within the material are located away from the center of its bandgap such that they suppress recombination-enhanced defect-reaction-driven degradation of the active optical device. The active optical device is epitaxially grown on a handle substrate of an SOI substrate that has a surface waveguide formed in its device layer, where the active region and the surface waveguide are at the same height above the handle wafer surface.

Integration of direct-bandgap optically active devices on indirect-bandgap-based substrates

A fiber-optic gyroscope is disclosed, wherein the fiber-optic gyroscope has counter-propagating light signals in a closed-loop optical path, and where the light signals are characterized by an orthogonality that mitigates optical coupling between them. In some embodiments, the orthogonality is a difference in frequency of the two signals. In some embodiments, the orthogonality is a difference in the polarizations of the two signals. The orthogonality is imparted on the light signals by a non-reciprocal element that is optically coupled with the optical path. In some embodiments, a gain-balancing filter is also included to ensure that the loop gain for each light signal is substantially equal to one. In some embodiments, the light signals are provided by a gain element that is characterized by inhomogeneous broadening.

Orthogonal-mode laser gyroscope

A dual-comb optical-frequency comb generator includes a tunable comb-generating laser, a coarse-comb generator, a fine-comb generator, a second harmonic generator, a coarse-comb offset photodetector, a dual-comb offset photodetector, and a fine-comb photodetector. The coarse comb is self-referencing and coupled to the fine comb so as to enable absolute determination of the frequencies of the fine comb.

Optical frequency measurement and control using dual optical-frequency combs

Photonic integrated circuits on silicon are disclosed. By bonding a wafer of HI-V material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. The coupling between the silicon waveguide and the III-V gain region allows for integration of low threshold lasers, tunable lasers, and other photonic integrated circuits with Complimentary Metal Oxide Semiconductor (CMOS) integrated circuits.

III-V photonic integration on silicon

An ultra-broadband photonic integrated circuit platform that combines at least two types of waveguides that each transmit in different, but overlapping, spectral bands on a single chip. By combining the multiple waveguides, the bandwidth of the platform can be extended beyond the bandwidth of either waveguide alone. In an exemplary embodiment, an ultra-broadband photonic integrated circuit includes a nitride-on-insulator (NOI) waveguide configured to transmit optical beams in a first spectral band and a silicon-on-nitride-on-insulator (SONOI) waveguide configured to transmit optical beams in a second band, where the same material serves as the core material in the NOI waveguide and as the cladding material in the SONOI waveguide. In some embodiments, light-emitting devices are bonded to an upper surface of the waveguides. In some embodiments, the circuit includes beam-combining elements so that a single beam combining all of the input wavelengths is output from the circuit.

Ultra-broadband photonic integrated circuit platform and ultra-broadband photonic integrated circuit

A method of fabricating a heterogeneous semiconductor wafer includes depositing a III-V type semiconductor epitaxial layer on a first wafer having a semiconductor substrate. The first wafer is then bonded to a second wafer having a patterned silicon layer formed on a semiconductor substrate, wherein the III-V type semiconductor epitaxial layer is bonded to the patterned silicon layer of the second wafer. The semiconductor substrate associated with the first wafer is removed to expose the III-V type semiconductor epitaxial layer.

Bonding of heterogeneous material grown on silicon to a silicon photonic circuit

A method for realizing a semiconductor waveguide and an ultra-low-loss dielectric waveguide disposed on the same substrate is disclosed. The method includes forming a partial dielectric waveguide structure on the substrate, wherein the dielectric waveguide is annealed to reduce hydrogen incorporation, and wherein the top cladding of the dielectric waveguide is only partially formed by a first dielectric layer. A second substrate comprising a semiconductor layer having a second dielectric layer disposed on its top surface is bonded to the first substrate such that the first and second dielectric layers collectively form the complete top cladding for the dielectric waveguide. The second substrate is then removed and the semiconductor layer is patterned to define the semiconductor waveguide core.

Integrated dielectric waveguide and semiconductor layer and method therefor

A semiconductor metallurgy includes a ratio of germanium and palladium that provides low contact resistance to both n-type material and p-type material. The metallurgy allows for a contact that does not include gold and is compatible with mass-production CMOS techniques. The ratio of germanium and palladium can be achieved by stacking layers of the materials and annealing the stack, or simultaneously depositing the germanium and palladium on the material where the contact is to be manufactured.

CMOS-compatible gold-free contacts

Composite epitaxial materials that comprise semimetallic ErAs nanoparticles or nanoislands epitaxially embedded in a semiconducting InGaAs matrix both as superlattices and randomly distributed throughout the matrix are disclosed. The presence of these particles increases the free electron concentration in the material while providing scattering centers for phonons. Electron concentration, mobility, and Seebeck coefficient of these materials are discussed and their potential for use in thermoelectric power generators is postulated. These composite materials in accordance with the present invention have high electrical conductivity, low thermal conductivity, and a high Seebeck coefficient. The ErAs nanoislands provides additional scattering mechanism for the mid to long wavelength phonon&#x2014;the combination reduces the thermal conductivity below the alloy limit.

High efficiency thermoelectric materials based on metal/semiconductor nanocomposites

Growing community of inventors

Santa Barbara, CA, United States of America

John E Bowers