Rockley Photonics Limited

John Drake

Damiana Lerose

Henri Nykänen

Amit Singh Nagra

Sanna Leena Mäkelä

Evie Kho

Ying Luo

Vivek Raghunathan

Gerald Cois Byrd

Brett Sawyer

Michael Lee

A silicon integrated circuit. In some embodiments, the silicon integrated circuit includes a first conductive trace, on a top surface of the silicon integrated circuit, a dielectric layer, on the first conductive trace, and a second conductive trace, on the dielectric layer, connected to the first conductive trace through a first via.

Silicon photonic interposer with two metal redistribution layers

A mirror and method of fabricating the mirror, the method comprising:

Waveguide mirror and method of fabricating a waveguide mirror

An optical fiber adapter and method of fabricating the same from a wafer including a double silicon-on-insulator layer structure. The optical fiber adapter may include a mode converter, a trench, and a V-groove, the V-groove and the trench operating as passive alignment features for an optical fiber, in the transverse translational and rotational degrees of freedom, and in the longitudinal translational degree of freedom, respectively. The mode converter may include a buried tapered waveguide.

Mode converter and method of fabricating thereof

An optical mode converter and method of fabricating the same from wafer including a double silicon-on-insulator layer structure. The method comprising: providing a first mask over a portion of a device layer of the DSOI layer structure; etching an unmasked portion of the device layer down to at least an upper buried oxide layer, to provide a cavity; etching a first isolation trench and a second isolation trench into a mode converter layer, the mode converter layer being: on an opposite side of the upper buried oxide layer to the device layer and between the upper buried oxide layer and a lower buried oxide layer, the lower buried oxide layer being above a substrate; wherein the first isolation trench and the second isolation trench define a tapered waveguide; filling the first isolation trench and the second isolation trench with an insulating material, so as to optically isolate the tapered waveguide from the remaining mode converter layer; and regrowing the etched region of the device layer.

A mirror and method of fabricating the mirror, the method comprising: providing a silicon-on-insulator substrate, the substrate comprising: a silicon support layer; a buried oxide (BOX) layer on top of the silicon support layer; and a silicon device layer on top of the BOX layer; creating a via in the silicon device layer, the via extending to the BOX layer; etching away a portion of the BOX layer starting at the via and extending laterally away from the via in a first direction to create a channel between the silicon device layer and silicon support layer; applying an anisotropic etch via the channel to regions of the silicon device layer and silicon support layer adjacent to the channel; the anisotropic etch following an orientation plane of the silicon device layer and silicon support layer to create a cavity underneath an overhanging portion of the silicon device layer; the overhanging portion defining a planar underside surface for vertically coupling light into and out of the silicon device layer; and applying a metal coating to the underside surface.

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St. Ives, United Kingdom

John Drake