Alliance for Sustainable Energy, LLC

Wisconsin Alumni Research Foundation

Other

University of Notre Dame Du Lac

Rochester Institute of Technology

John David Simon

Aaron Joseph Ptak

Kevin Louis Schulte

David Levi Young

Thomas Francis Kuech

Debdeep Jena

Myles Aaron Steiner

Huili Xing

Elisabeth Lynne Mcclure

Wondwosen Tilahun Metaferia

Disclosed herein are methods and devices that use a low-thermal conductivity inert gas to shield reactant gases and thus enabling a cold wall operation within a hot wall system.

Nitrogen-enabled high growth rates in hydride vapor phase epitaxy

The present disclosure relates to a method that includes contacting a surface of a first layer that includes a Group III element and a Group V element with a gas that includes HCl, where the first layer is positioned in thermal contact with a wafer positioned in a chamber of a reactor, and the contacting results in a roughening of the surface.

Light scattering structures for thin-film solar cells and methods of making the same

Presented herein are reactors for growing or depositing semiconductor films or devices. The reactors disclosed may be used for the production of III-V materials grown by hydride vapor phase epitaxy (HVPE).

Hydride enhanced growth rates in hydride vapor phase epitaxy

Methods for forming interdigitated back contact solar cells from III-V materials are provided. According to an aspect of the invention, a method includes depositing a patterned Zn layer to cover first areas of an n-type emitter region, wherein the emitter region comprises a III-V material, and forming a passivated back contact region by counter-doping the first areas of the emitter region by diffusing Zn from the patterned Zn layer into the first areas of the emitter region, such that the first areas of the emitter region become p-type.

Methods of forming interdigitated back contact solar cells

A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HVPE-type reactants and gases. Using HVPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5 &#x3bc;m/minute.

High throughput semiconductor deposition system

A compositionally graded semiconductor device and a method of making same are disclosed that provides an efficient p-type doping for wide bandgap semiconductors by exploiting electronic polarization within the crystalline lattice. The compositional graded semiconductor graded device includes a graded heterojunction interface that exhibits a 3D bound polarization-induced sheet charge that spreads in accordance with &#x3c1;(z)=&#x2212;&#x2207;&#xb7;P(z), where &#x3c1;(z) is a volume charge density in a polar (z) direction, and &#x2207; is a divergence operator, wherein the graded heterojunction interface is configured to exhibit substantially equivalent conductivities along both lateral and vertical directions relative to the graded heterojunction interface.

Compositionally graded heterojunction semiconductor device and method of making same

A wakeup signal generating circuit is connected to an input of an electrically driven motor having a drive shaft that is mechanically coupled to a power sliding door or power lift gate of an automobile. The motor is normally responsive to a motor drive signal to control door/lift gate movement via rotation of the motor drive shaft. In the absence of the motor drive signal, the motor is responsive to rotation of the drive shaft, via manual movement of the door or lift gate, to produce a back electromotive force (EMF) signal at the input of the motor. The wakeup signal generating circuit is responsive to the back EMF signal to produce a wakeup signal. In one embodiment, the wakeup signal is used to cause a control circuit controlling the overall operation of the motor to wake up from a reduced-function, power conserving sleep mode of operation and operate in a full-function, full power wakeup mode of operation.

Growing community of inventors

Littleton, CO, United States of America

John David Simon