International Business Machines Corporation

John David Henke

Robert P Latham

Peruvemba S Balasubramanian

Edwin C Grazier

Robert Joseph DeFilippi

Charles Noble Alcorn

Robert Ng Liang

Martin J Myers

Read only memory with optimized dimension for improved performance and

An MOSFET latching driver circuit is disclosed which employs a depletion mode FET load bistable latch whose first node drives a depletion mode FET device and whose second node drives an enhancement mode FET device which are interconnected in a push-pull driver circuit. The latching driver has a reduced size when laid out in an integrated circuit and operates at a high speed.

MOSFET latching driver

An integrated monolithic switch is fabricated in an epitaxial layer united to a semiconductor substrate. The switch includes a Darlington amplifier, a power output switch, a bilateral device, typically a diffused diode, and an epitaxial resistor, the combination being connected between a set of high voltage lines. The epitaxial layer has an appropriate thickness and resistivity to accommodate all active and passive elements. For a first input signal, the switch is connected to one high voltage line. For a second input signal, the switch is connected to the other high voltage line. The switch is adapted to sink current. The diode structure, when forward biased by the sinking current, forms a parasitic path to direct the sinking current to the substrate even though the high voltage lines are up. The Darlington is connected to the switch output to lower output voltage during the sinking condition. A set of switches of the same conductivity type may be employed to drive a cross point in a gas panel display.

Integrated monolithic switch for high voltage applications

Growing community of inventors

Manassas, VA, United States of America

John David Henke