Fujitsu Corporation

International Business Machines Corporation

John David Baniecki

Kazuaki Kurihara

Takeshi Shioga

Masatoshi Ishii

Kazunori Yamanaka

Yoshihiko Imanaka

Hiroyuki Aso

Masataka Mizukoshi

Kanae Nakagawa

Yoshikatsu Ishizuki

Teru Nakanishi

Robert B Laibowitz

Akihiko Akasegawa

Yasuo Yamagishi

Johannes Georg Bednorz

Taiji Sakai

Kenji Nomura

Mamoru Kurashina

Jean-Pierre A Locquet

Thomas M Shaw

Takashi Yamazaki

Christopher Carr Parks

Mineharu Tsukada

Jeffrey Scott Cross

Toshihisa Anazawa

Yasutoshi Kotaka

Igor Stolichnov

Kazuaki Kurhara

An oxygen generating electrode includes a conductive layer; a photocatalyst layer; and a light absorption. The light-absorbing layer arranged between the conductive layer and the photocatalyst layer. The light-absorbing layer is formed of one or a plurality of perovskite-type films, and each of the films contains tin (Sn), oxygen (O), sulfur (S), and one or more elements selected from Group 1 or Group 2 of the periodic table of elements. Each of the films formed by doping S for substituting an O site is set so that a band gap takes a predetermined value in a range between 0 eV to 4 eV.

Oxygen generating electrode, oxygen generating electrode device, and photoelectric converter

An oxygen generating electrode includes: an oxide film having a perovskite structure; an organic film over the oxide film; and a conductive film electrically coupled to the organic film, wherein the organic film contains an amino acid having a side chain of negative polarity.

Oxygen generating electrode and oxygen generator

An oxygen generation electrode includes, a conductive layer including a salt of stannic acid, the salt of stannic acid having a perovskite structure, a light absorption layer disposed on the conductive layer, and a catalyst layer disposed on the light absorption layer, the catalyst layer including an oxide having a perovskite structure and being responsible for an oxygen evolution reaction, the conductive layer being doped to degeneracy with impurities, the light absorption layer forming a Type-II heterojunction with the conductive layer, the catalyst layer being doped to degeneracy with impurities, the upper end of the valence band of the catalyst layer being higher than the upper end of the valence band of the light absorption layer.

Oxygen generation apparatus

A thermoelectric generator includes a perovskite dielectric substrate containing Sr and Ti and having electric conductivity by being doped to n-type; an energy filter formed on a top surface of the perovskite dielectric substrate, the energy filter including a first perovskite dielectric film, which contains Sr and Ti, has electric conductivity by being doped to n-type, and has a conduction band at an energy level higher than that of the perovskite dielectric substrate; a first electrode formed in electrical contact with a bottom surface of the perovskite dielectric substrate; and a second electrode formed in electrical contact with a top surface of the energy filter. The thermoelectric generator produces a voltage between the first and second electrodes by the top surface of the energy filter being exposed to a first temperature and the bottom surface of the perovskite dielectric substrate being exposed to a second temperature.

Thermoelectric generator

A photochemical electrode includes: an optical absorption layer; a catalyst layer for oxygen evolution reaction over the optical absorption layer; and a conducting layer over the catalyst layer. A valance band maximum of the catalyst layer is higher than a valance band maximum of the optical absorption layer. A work function of the conducting layer is larger than a work function of the catalyst layer.

Photochemical electrode and oxygen evolution device

A thermoelectric conversion element includes a film composed of a conductive oxide, a first electrode disposed on one end of the film composed of the conductive oxide, and a second electrode disposed on another end of the film composed of the conductive oxide, wherein the conductive oxide has a tetragonal crystal structure expressed by ABO, where 0.1&#x3c;x&#x3c;1, wherein the conductive oxide has a band structure in which a Fermi level intersects seven bands between a &#x393; point and an R point, and wherein the first electrode and the second electrode are disposed on the film composed of the conductive oxide so that electrical charge moves in a direction of a smallest vector among three primitive translation vectors of the crystal structure.

Method for producing thermoelectric conversion element

A thermoelectric conversion element includes: a first film including a perovskite structure; a second film and a third film, including a perovskite structure, disposed in such a manner that the first film is interposed between the second film and the third film; a fourth film, including a perovskite structure, disposed so as to interpose the second film with the first film; and a fifth film, including a perovskite structure, disposed so as to interpose the third film with the first film, wherein an offset in conduction band between the first film and the second film and an offset in conduction band between the first film and the third film is less than 0.25 eV, and an offset in conduction band between the second film and the fourth film and an offset in conduction band between the third film and the fifth film is more than 1 eV.

Method for producing thermoelectric conversion apparatus and thermoelectric conversion apparatus

A photochemical electrode includes a conductive oxide. Fermi energy of the conductive oxide is higher than a first energy minimum of a first band having a lowest energy and is lower than a second energy minimum of a second band having a higher energy than the first band among bands whose curvatures are positive in reciprocal space. The first energy minimum and the second energy minimum are at the same point of wave vector. A difference between the second energy minimum and the first energy minimum is not less than 1 eV nor more than 3 eV, and is smaller than a difference between the first energy minimum and an energy maximum of a band having a highest energy among bands whose curvatures are negative.

Photochemical electrode and hydrogen evolution device

Thermoelectric conversion element and method for producing the same

A thermoelectric conversion element includes a p-type film having a perovskite structure, the p-type film including Co; an n-type film having a perovskite structure, the n-type film including Ti; first and second i-type films configured to be arranged to face each other across the n-type film, the first and second i-type films having a perovskite structure and including Ti; and a barrier film configured to be interposed between a multilayer body and the p-type film, the barrier film having a perovskite structure and including Zr, the multilayer body including the n-type film and the first and second i-type films.

A thermoelectric conversion device includes a perovskite film over a substrate and formed with first and second electrodes on the perovskite film, wherein the perovskite film includes a domain having a crystal orientation different from a crystal orientation of a crystal that constitutes the perovskite film.

Thermoelectric conversion device having perovskite crystal including grain domain

A thermoelectric conversion device includes a stack in which a first perovskite dielectric film, which includes Sr and Ti and has a first bandgap, and a second perovskite dielectric film, which includes Sr and Ti and has a second bandgap smaller than the first bandgap, are stacked alternately, each of the first and second perovskite dielectric films being doped to have an electric conductivity, the first and the second perovskite dielectric films having respective compositions such that there appears a bandoffset of 0.54 eV in maximum between a conduction band of the first perovskite dielectric film and a conduction band of the second perovskite dielectric film.

Thermoelectric conversion device

A variable capacitor includes a metal oxide film having a perovskite structure, first and second electrode films having the metal oxide film placed therebetween and to be coupled to an external voltage source, and a bias voltage source configured to provide a bias voltage that is applied in series or parallel to a capacitance of a capacitor including the metal oxide film and the first and second electrode films, wherein the bias voltage applied by the bias voltage source to the capacitance is adapted to maximize a voltage dependency of a relative permittivity of the metal oxide film.

Variable capacitor and filter circuit with bias voltage

A fuel cell system includes a fuel cell configured to generate electric power with a fuel gas and an oxygen gas fed to the fuel cell and to discharge exhaust gas including COas a result of generating the electric power; a CO extraction part configured to reduce the COin the exhaust gas fed to the CO extraction part to CO, the CO extraction part including a processing container fed with the exhaust gas and a COadsorbing member provided in the processing container and formed of an oxide having an oxygen deficiency; and a CO recycling part configured to feed the extracted CO to the fuel cell as part of the fuel gas.

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Kawasaki, Japan

John David Baniecki