International Business Machines Corporation

John D Sylvestri

Darrell L Miles

Terence Lawrence Kane

Richard W Oldrey

Peilin Song

Michael P Tenney

Stephen Bradley Ippolito

Patrick J McGinnis

Yun-Yu Wang

Frank Louis Pompeo

Phong T Tran

Brett H Engel

Jay A Bunt

David J Lewison

Stephen M Lucarini

Manuel J Villalobos

Barbara A Averill

A method of preparing a computer processor die includes determining a warpage shape of the computer processor die at a testing temperature. The method also includes selectively contouring a thickness of the computer processor die at a contouring temperature by physically removing material from a surface of the computer processor die such that the surface will be substantially flat at the testing temperature.

High power device fault localization via die surface contouring

A method and system for backside unlayering a semiconductor device to expose FEOL semiconductor features of the device for subsequent electrical and/or physical probing. A window is formed within a backside substrate layer of the semiconductor. A collimated ion plasma is generated and directed so as to contact the semiconductor only within the backside window via an opening in a focusing shield. This focused collimated ion plasma contacts the semiconductor, only within the window, while the semiconductor is simultaneously being rotated and tilted by a temperature controlled stage, for uniform removal of semiconductor layering such that the semiconductor features, in a location on the semiconductor corresponding to the backside window, are exposed. Backside unlayering of the invention may be enhanced by CAIBE processing.

Backside unlayering of MOSFET devices for electrical and physical characterization

A structure for locating a fault in a semiconductor chip. The chip includes a substrate on a dielectric interconnect. A first electrical response image of the chip, which includes a spot representing the fault, is overlayed on a first reflection image for monochromatic light in an optical path from an optical microscope through a SIL/NAIL and into the chip. The index of refraction of the substrate exceeds that of the dielectric interconnect and is equal to that of the SIL/NAIL. A second electrical response image of the chip is overlayed on a second reflection image for the monochromatic light in an optical path in which an optical stop prevents all subcritical angular components of the monochromatic light from being incident on the SIL/NAIL. If the second electrical response image includes or does not include the spot, then the fault is in the substrate or the dielectric interconnect, respectively.

Angular spectrum tailoring in solid immersion microscopy for circuit analysis

A method and structure for locating a fault in a semiconductor chip. The chip includes a substrate on a dielectric interconnect. A first electrical response image of the chip, which includes a spot representing the fault, is overlayed on a first reflection image for monochromatic light in an optical path from an optical microscope through a SIL/NAIL and into the chip. The index of refraction of the substrate exceeds that of the dielectric interconnect and is equal to that of the SIL/NAIL. A second electrical response image of the chip is overlayed on a second reflection image for the monochromatic light in an optical path in which an optical stop prevents all subcritical angular components of the monochromatic light from being incident on the SIL/NAIL. If the second electrical response image includes or does not include the spot, then the fault is in the substrate or the dielectric interconnect, respectively.

The present invention provides a semiconducting device including a gate dielectric atop a semiconducting substrate, the semiconducting substrate containing source and drain regions adjacent the gate dielectric; a gate conductor atop the gate dielectric; a conformal dielectric passivation stack positioned on at least the gate conductor sidewalls, the conformal dielectric passivation stack comprising a plurality of conformal dielectric layers, wherein no electrical path extends entirely through the stack; and a contact to the source and drain regions, wherein the discontinuous seam through the conformal dielectric passivation stack substantially eliminates shorting between the contact and the gate conductor. The present invention also provides a method for forming the above-described semiconducting device.

Barrier dielectric stack for seam protection

An apparatus for facilitating single die backside probing of semiconductor devices includes a chip holder configured for receiving a single integrated circuit die attached thereto, the chip holder maintained in flexible engagement in an X-Y orientation with respect to a lift plate. A lift ring is coupled to the lift plate, the lift ring configured to facilitate adjustment of the lift plate and the chip holder in a Z-direction.

Apparatus and method for single die backside probing of semiconductor devices

A technique is described for performing critical parameter analysis (CPA) of a semiconductor device (DUT) by combining the capabilities of conventional automated test equipment (ATE) with a focused optical beam scanning device such as a laser scanning microscope (LSM). The DUT is provided with a fixture such that it can be simultaneously scanned by the LSM or a similar device and exercised by the ATE. The ATE is used to determine pass/fail boundaries of operation of the DUT. Repeatable pass/fail limits (for timing, levels, etc.) are determined utilizing standard test patterns and methodologies. The ATE vector pattern(s) can then be programmed to 'loop' the test under a known passing or failing state. When light energy from the LSM scanning beam sufficiently disturbs the DUT to produce a transition (i.e., to push the device outside of its critical parameter limits), this transition is indicated on the displayed image of the DUT, indicating to the user which elements of the DUT were implicated in the transition.

Laser-induced critical parameter analysis of CMOS devices

A method for implementing backside probing of a semiconductor device includes isolating an identified defect area on a backside of the semiconductor device, and milling the identified defect area to an initial depth. Edges of the identified defect area are masked, wherein unmasked semiconductor material, beginning at the initial depth, is etched for a plurality of timed intervals until one or more active devices are reached. The one or more active devices are electrically probed.

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Poughkeepsie, NY, United States of America

John D Sylvestri