Intel Corporation

Praxair Technology, Inc.

John D Peck

David Michael Thompson

Adrien Lavoie

Harsono S Simka

Juan E Dominguez

John J Plombon

Valery M Dubin

Kevin O'Brien

Sean Michael Kelly

David Walter Peters

Steven R Chapman

Joseph Han

Ronald F Spohn

Steven W Johnston

Scott Houston Meiere

Michael M Litwin

Cynthia A Hoover

Nikhil R Agashe

Ethelbert Galicia

Sadashiv M Swami

Juan E Dominquez

David M Thompson

A method of operating an oxygen transport membrane based reforming system employing one or more packs of thermally coupled panels of reformer tubes and oxygen transport membrane ('OTM') reactors close to thermo-neutral point is provided. The method produces syngas by converting a hydrocarbon-containing feed, such as natural gas in the reformer tubes of a pack by endothermic steam reforming reactions. The heat required for endothermic reforming reactions is provided by exothermic oxidizing reactions occurring inside the OTM reactors of the pack. At a thermo-neutral point the heat released by exothermic reactions matches the heat required to support endothermic reactions and heat losses in the pack. The method modulates the flow rate of hydrocarbon-containing feed and/or steam-to-carbon ratio of the combined feed to the pack to maintain the surface temperature of oxygen transport membrane reactors below a target maximum temperature. The syngas product oxygen-to-carbon ratio is maintained within a desired target range such that the OTM based reforming system is operated close to thermo-neutral point.

Method of thermally-stabilizing an oxygen transport membrane-based reforming system

This invention relates to organometallic compounds represented by the formula (L)M(L)wherein M is a metal or metalloid, Land Lare different and are each a hydrocarbon group or a heteroatom-containing group;is a value of at least 1;is a value of at least 1;+is equal to the oxidation state of M; and wherein (i) Lhas a steric bulk sufficiently large such that, due to steric hinderance,cannot be a value equal to the oxidation state of M, (ii) Lhas a steric bulk sufficiently small such that, due to lack of steric hinderance,can be a value equal to the oxidation state of M only in the event thatis not a value of at least 1, and (iii) Land Lhave a steric bulk sufficient to maintain a heteroleptic structure in which+is equal to the oxidation state of M; a process for producing the organometallic compounds, and a method for producing a film or coating from organometallic precursor compounds.

Heteroleptic organometallic compounds

Disclosed herein is a process for producing a film, coating or powder employing a metallocene or metallocene-like precursor having the general formula CpMCp', where M is a metal selected from the group consisting of Ru, Os and Fe; Cp is a first substituted cyclopentadienyl or cyclopentadienyl-like, e.g., indenyl, moiety that includes at least one substituent group D, where Dis X; CHX; CHX(C&#x2550;O)CHX; CHXOCHX; CHX(C&#x2550;O)OCHX; or CHXO(C&#x2550;O)CHX; and Cp&#x2032; is a second substituted cyclopentadienyl or cyclopentadienyl-like, e.g., indenyl, moiety that includes at least one substituent group D&#x2032;, where D1&#x2032; is X; CHX; CHX(C&#x2550;O)CHX; CHXOCHX; CHX(C&#x2550;O)OCHX; or CHXO(C&#x2550;O)CHX. Dand D&#x2032; are different from one another. X is a halogen atom or NO; a1 is an integer between 1 to 8; b1 is an integer between 0 and 2(a1)+1&#x2212;c1; c1 is an integer between 0 and 2(a1)+1&#x2212;b1; b1+c1 is at least 1; a2 is an integer between 0 and 8; b2 is an integer between 0 and 2(a2)+1&#x2212;c2; and c2 is an integer between 0 and 2(a2)+1&#x2212;b2. The process can be used in manufacturing or processing electronic devices.

Deposition processes using group 8 (VIII) metallocene precursors

Organometallic precursors and methods for deposition on a substrate in seed/barrier applications are herein disclosed. In some embodiments, the organometallic precursor is a ruthenium-containing, tantalum-containing precursor or combination thereof and may be deposited by atomic layer deposition, chemical vapor deposition and/or physical vapor deposition.

Organometallic precursors for seed/barrier processes and methods thereof

A method for forming a metal carbide layer begins with providing a substrate, an organometallic precursor material, at least one doping agent such as nitrogen, and a plasma such as a hydrogen plasma. The substrate is placed within a reaction chamber; and heated. A process cycle is then performed, where the process cycle includes pulsing the organometallic precursor material into the reaction chamber, pulsing the doping agent into the reaction chamber, and pulsing the plasma into the reaction chamber, such that the organometallic precursor material, the doping agent, and the plasma react at the surface of the substrate to form a metal carbide layer. The process cycles can be repeated and varied to form a graded metal carbide layer.

Amine-free deposition of metal-nitride films

A method comprising introducing an organometallic precursor according to a first set of conditions in the presence of a substrate; introducing the organometallic precursor according to a different second set of conditions in the presence of the substrate; and forming a layer comprising a moiety of the organometallic precursor on the substrate according to an atomic layer deposition process. A system comprising a computing device comprising a microprocessor, the microprocessor coupled to a printed circuit board, the microprocessor comprising a substrate having a plurality of circuit devices with electrical connections made to the plurality of circuit devices through interconnect structures formed in a plurality of dielectric layers formed on the substrate and each of the plurality of interconnect structures separated from the plurality of dielectric layers by a barrier layer formed according to an atomic layer deposition process.

Direct tailoring of the composition and density of ALD films

Growing community of inventors

West Seneca, NY, United States of America

John D Peck