Sprague Electric Company

John D Macdougall

Richard B Cooper

High voltage integrated circuit field plates that are connected directly to the epitaxial pockets over which they lie, are formed simultaneously with high resistivity polysilicon resistors and are insulated from cross-over metal by a dual insulation of silicon dioxide and silicon nitride. Without adding to these process steps, MNS capacitors are formed that have a higher packing density than their MOS counterparts. The space saving MNS capacitors are thus space-wise and process-wise compatible with the polysilicon field plates that occupy much less chip real estate than do diffused channel stops.

High voltage integrated circuit

A Hall-cell of relatively high sensitivity and low power consumption is provided in an isolated epitaxial pocket of an integrated circuit. The epitaxial layer is of opposite conductivity type to that of the supporting silicon substrate. The Hall-cell body of opposite conductivity type consists of an ion-implanted surface portion of the pocket and may have a thickness that is limited by a buried layer of the same type as that of the substrate. This Hall-cell is capable of being manufactured with closely controlled electrical properties and by steps imposing few restraints on the quality of other components in the integrated circuit.

Growing community of inventors

Westborough, MA, United States of America

John D Macdougall