Motorola Corporation

John D Goshinska, Jr

Warren L Seely

Hugh Robert Malone

Michael Lee Fraser

Craig L Fullerton

Ronald F Kielmeyer

Armando J Mendoza

Richard J Christensen

Paul L Brownlee

A two-dimensional FET array (,) within a Q-band power amplifier module is presented. Array (,) has a plurality of substantially identical one-dimensional FET arrays (,) substantially centered upon a primary axis (,) of two-dimensional array (,) substantially perpendicular to a propagation axis (,) of module (,). Each one-dimensional array (,) is formed of a plurality of FETs (,) substantially centered along a FET axis (,) substantially parallel to propagation axis (,). Each one-dimensional array (,) is proximate and coupled to each of an input bus (,) and an output bus (,), both oriented substantially parallel to propagation axis (,).

Power amplifier having two-dimensional FET array

A complimentary switched amplifier transceiver (10) is provided which offers performance advantages and reduces system complexity over conventional half-duplex transceivers by using complimentary switched amplifiers for eliminating switches. Power output to a channel transition (31) from a transmit amplifier (26) is not degraded by a switch insertion loss in a transmit mode. Receiver noise figure is not degraded due to the switch insertion loss from the channel transition (31) to a receive amplifier (27). Switch devices and their associated control lines are eliminated, reducing circuit complexity for complimentary switched amplifier circuits such as a combined amplifier switch (12) and a first bi-directional amplifier (22).

Complimentary switched amplifier transceiver system

Growing community of inventors

Gilbert, AZ, United States of America

John D Goshinska, Jr