US Government As Represented by the Secretary of the Army

John D Demaree

Paul J Conroy

Stefan P Svensson

Charles Stanley Leveritt

James Hirvonen

In certain desirable embodiments, the present invention relates to the use ofN isotopes into GaAsN, InAsN or GaSbN films for ion beam analysis. A semiconductor-nitride assembly for growing and analyzing crystal growth in a group III-V semiconductor sample that includes: a substrate; a buffer layer deposited on the substrate, a nitrogen gas injector to incorporate enriched nitrogen gas and the nitrogen gas injector includes a concentration of enriched nitrogen gas, a thin film consisting of at least one group III element containing compound where at least one group III element is covalently bonded with the nitrogen in the presence of the same or different group V element of the buffer layer, and a proton beam to analyze the incorporation of the nitrogen gas in the thin film layer is described.

Apparatus for growth of dilute-nitride materials using an isotope for enhancing the sensitivity of resonant nuclear reaction analysis

Method for growth of dilute-nitride materials using an isotope for enhancing the sensitivity of resonant nuclear reation analysis

A dynamic process for increasing the wear life of ferrous articles subjected to a high-temperature environment created by combustion of a propellant or fuel comprises selecting the propellant or fuel so that its combustion products include relatively large amounts of nitrogen, which nitrogen forms a protective nitride layer on the surface of the ferrous article. Disclosed is a specific embodiment of the invention for prolonging the wear life of gun barrels.

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Baltimore, MD, United States of America

John D Demaree