US Government As Represented by the Secretary of the Army

The State University of New York

Maxion Technologies, Inc.

University of Texas System

John D Bruno

Richard L Tober

Donald E Wortman

John T Pham

Serge Luryi

Gregory L Belenky

Mikhail V Kisin

Sergey Suchalkin

Leon Shterengas

Mikhail A Belkin

Thomas B Bahder

John L Bradshaw

Mary S Tobin

Romel D Gomez

The present invention provides a QCL device with an electrically controlled refractive index through the Stark effect. By changing the electric field in the active area, the energy spacing between the lasing energy levels may be changed and, hence, the effective refractive index in the spectral region near the laser wavelength may be controlled.

Quantum cascade lasers with electrically tunable emission wavelengths

A semiconductor light source comprises a substrate, lower and upper claddings, a waveguide region with imbedded active area, and electrical contacts to provide voltage necessary for the wavelength tuning. The active region includes single or several heterojunction periods sandwiched between charge accumulation layers. Each of the active region periods comprises higher and lower affinity semiconductor layers with type-II band alignment. The charge carrier accumulation in the charge accumulation layers results in electric field build-up and leads to the formation of generally triangular electron and hole potential wells in the higher and lower affinity layers. Nonequillibrium carriers can be created in the active region by means of electrical injection or optical pumping. The ground state energy in the triangular wells and the radiation wavelength can be tuned by changing the voltage drop across the active region.

Semiconductor light source with electrically tunable emission wavelength

Disclosed are a semiconductor device and method of manufacturing the same comprising a substrate, a mesa region adjacent to the substrate, an electroplated metal layer, for reducing the thermal resistance of the device, surrounding the mesa region, an insulator layer separating a side portion of the mesa region from the electroplated metal layer, a heat sink, a bonding layer adjacent to the heat sink, and a second metal layer in between the substrate and the heat sink, wherein the substrate is adjacent to the bonding layer, and wherein the electroplated metal layer dimensioned and configured to have a thickness of at least half a thickness of the mesa region; and to laterally spread heat away from the mesa region. The mesa region comprises a first cladding layer adjacent to the substrate, an active region adjacent the first cladding layer, and a second cladding layer adjacent to the active region.

Lateral heat spreading layers for epi-side up ridge waveguide semiconductor lasers

A quantum-confined Stark effect semiconductor optical modulator, operable to modulate light of a particular wavelength in the range of around 780 to 840 nm. A p-i-n diode having p, intrinsic and n regions, as well as first and second electrical contacts for application of a reverse bias voltage defines the modulator. The particular intrinsic region includes a plurality of semiconductor layers defining a plurality of quantum wells separated by barrier layers having a certain bandgap energy above that of the quantum wells. The quantum wells including at least two ultra-thin barrier layers within the quantum well and being of a material having a certain bandgap energy above that of the quantum wells. The width of each ultra-thin barrier layer is no more than approximately two molecular layers thick.

Multiple quantum well semiconductor optical modulator

An interband cascade (IC) light emitting device having narrow ridges, and a method of growing and fabricating the IC light emitting device is disclosed. The IC light emitting device produced by the method of the present invention has 18 active regions separated by n-type injection regions and a plurality of coupled quantum wells of Al(In)Sb, InAs, and Ga(In)Sb layers. The IC light emitting device produced according to the present method has a differential external quantum efficiency of at least 500%, a peak power output of at least 4W/facet, a power conversion efficiency of at least 14% in continuous wave at 80K, a power conversion efficiency of at least 18% in pulsed wave operation at 80K, a continuous wave operation temperature of 142 K or less, a thermal resistance of from about 24-29 K*cm /kW and continuous wave output powers of at least 100 mW/facet at temperatures above 77K.

Interband cascade light emitting device and method of making same

A valve-less fluid control circuit for controlling rhythmic action devices, such as circulatory assist devices. The fluid control circuit has a plurality of pressure sensitive fluid oscillators for circulating a fluid. Each fluid oscillator includes a capacitance chamber unit for peristaltic pumping of fluid after being filled via an input conduit and a resistance conduit. A first control conduit provides an outlet of fluid from the capacitance unit during peristaltic pumping, and when the pressure of the fluid in the first control conduit reaches a certain level relative to the pressure of fluid in the input conduit, the fluid is directed through an interactive region and exits the first fluid oscillator through an exhaust conduit. A coupling unit couples the output of the first fluid oscillator to the input conduit of the successive fluid oscillator, so that the expansion and contraction of the capacitance chambers occurs successively without the need for valves and/or complicated control circuitry, such as solenoids and cams. A return conduit at the last fluid oscillator returns the fluid to a second control conduit of the first fluid oscillator to refill the first capacitance chamber.

Valve-less fluid control circuit for rhythmic action devices

A method for improving images of surface features of a sample, constructed by a scanning probe microscope, includes constructing images of surface features of a sample with a scanning probe microscope; measuring a displacement of the sample that occurs during the constructing step; and correcting the images using the measured displacement. An apparatus for improving images of surface features of a sample, constructed by a scanning probe microscope, includes a vacuum chamber; a sample holder disposed in the vacuum chamber; at least one spring connected between the vacuum chamber and the sample holder; at least one magnet disposed in the vacuum chamber for damping vibrations of the sample holder; a probe and piezo tube assembly disposed in the vacuum chamber for scanning surface features of a sample; and an interferometer disposed in the vacuum chamber wherein the interferometer measures a distance between the sample and a point fixed with respect to the sample.

Vibration distortion removal for scanning probe microscopes

An electromagnetic launcher includes a single or multi-polar, multi-phase electrical generator powered by an external source; electrical conductors leading from output coils of the generator and from a center point joining the output coils; a plurality of rails connected to the electrical conductors; and an armature having at least two channels; whereby there is at least one position of the armature along the plurality of rails where current flows simultaneously through both of the at least two channels.

Electromagnetic launcher with pulse-shaping armature and divided rails

An optoelectronic device comprises a detector, an emitter and a modulator corporated into a single semiconductor chip. The optoelectronic device provides electrical isolation and optical interconnection (via waveguides) of the components of the semiconductor chip. Contacts for providing forward and reverse bias voltages are included in the device. The optoelectronic device is fabricated by growing a strained-layer quantum diode structure to produce a piezoelectric field in a quantum well, electrically isolating portions of the structure, and optically interconnecting portions of the structure. The fabrication is carried out by using an implant process or an etching process, and without having to use either regrowth techniques or packaging together of multiple optical elements.

Single-chip, multi-functional optoelectronic device and method for

An apparatus for determining thickness of a wall or coal seam includes a ice for measuring the time of sound travel through the thickness; a flexible isolation bellows that mechanically supports the device for measuring the time of sound travel; and a retractable isolation arm attached to the isolation bellows. The device for measuring the time of sound travel may be a single-beam pulse sonar system. The single-beam pulse sonar system includes a pulse generator, a power amplifier, a transmit/receive switch, a reciprocal acoustic transducer, a receiver for determining the thickness, and a display and/or an electronic feedback circuit for steering an autonomous miner.

Growing community of inventors

Bowie, MD, United States of America

John D Bruno