Westinghouse Electric Corporation

Northrop Grumman Systems Corporation

United States of America As Represented by the Secretary of the Air Force

University of Pennsylvania

John D Adam

John Xavier Przybysz

Steven N Stitzer

Michael R Daniel

Hong Zhang

Aaron A Pesetski

James Edward Baumgardner

Robert Miles Young

Deborah P Partlow

Narsingh Bahadur Singh

Gianluca Piazza

Andre E Berghmans

Andrew J Piloto

Brian Paul Wagner

David A Kahler

David J Knuteson

Howard N Fudem

Marc Eisenzweig Sherwin

Robert A Moore

Silai V Krishnaswamy

Robert W Weinert

Gerald I Klein

Bruce R McAvoy

Salvador H Talisa

William E McGann

John J Talvacchio

Thomas E Steigerwald

S Visvanathan Krishnaswamy

Terence W O'Keeffe

Ralph W Patterson

Nicholas G Paraskevopoulos

Jim Murduck

Norman Goldstein

John M Walker

Carol J Painter

A bulk acoustic resonator assembly and methods for fabricated the resonator assembly is provided. The resonator includes a cavity on a first surface of a substrate, with a sheet of low acoustic loss material suspended over the cavity. The sheet of low acoustic loss material is configured such that an associated fundamental frequency of the sheet of low acoustic loss material is a function of a length of the sheet of low acoustic loss material in a direction parallel to the first surface of the substrate. A transducer includes an electromechanical layer on the sheet of low acoustic loss material and a patterned conductive material formed on the electromechanical material. The transducer is configured to induce vibrations in the low acoustic loss material upon application of an electrical signal to the conductive pattern.

Lateral over-moded bulk acoustic resonators

Multi-function receivers are disclosed in which high dynamic range active microwave filters using nanoscale devices are disposed within a switched channelizer stage. In an embodiment the receiver includes an input low noise amplifier, a switched channelizer comprised of active filters utilizing nanoscale devices, an output amplifier, a mixer, and an analog to digital converter. Additionally, the use of highly selective active filters in the channelizer allows for the optional elimination of the mixing stage, improving cost and overall volume.

Multi-function receiver with switched channelizer having high dynamic range active microwave filters using carbon nanotube electronics

An imaging system includes an RF source, a focal plane array and device for focusing the RF signal from the RF source. The focal plane array includes a plurality of carbon nanotube mixers for capturing RF signals and down-converting the signals to a selected bandwidth and output an output signal. The device focuses the RF signal output from said RF source onto the focal plane array.

Carbon nanotube devices and method of fabricating the same

Methods of producing polycrystalline and single crystal dielectrics are disclosed, including dielectrics comprising CaCuTiOor LaGaSiO. Superior single crystals are manufactured with improved crystallinity by atomic lattice constant adjustments to the dielectric and to the substrate on which it is grown. Dielectric materials made according to the disclosed methods are useful for manufacture of energy storage devices, e.g. capacitors.

High dielectric capacitor materials and method of their production

A carbon nanotube field effect transistor includes a substrate, a source electrode, a drain electrode and a carbon nanotube. The carbon nanotube forms a channel between the source electrode and the drain electrode. The carbon nanotube field effect transistor also includes a gate dielectric and a gate electrode. The gate electrode is separated from the carbon nanotube by the gate dielectric, and an input radio frequency voltage is applied to the gate electrode.

Carbon nanotube field effect transistor

A resonant transistor includes a substrate, a source and a drain formed on the substrate, an input electrode and a carbon nanotube gate. A gap is formed between the source and the drain. The input electrode is formed on the substrate. The carbon nanotube gate is clamped on one end by a contact electrode and positioned, preferably cantilevered, over the gap and over the input electrode.

Carbon nanotube resonator transistor and method of making same

A frequency selective limiter includes a pair of back-to-back diodes, coupled to an input and an output of the frequency selective limiter, and a resonator. The resonator is coupled to the pair of back-to-back diodes.

Frequency selective limiting with resonators

An RF mixer includes a diode quad including first, second, third and fourth carbon nanotube diodes, each carbon nanotube diode including a p-n junction The mixer also includes a RF input coupled each of the diodes, and a local oscillator input coupled with each of the diodes.

A radio frequency (RF) filter includes a substrate, first and second dielectric layers formed on first and second portions of the substrate, a ground plane formed on a third portion of said substrate, a carbon nanotube array, and first and second electrodes. The third portion of the substrate includes, at least in part, the area between the first and second portions thereof. The carbon nanotube array is formed on a portion of said ground plane between the first and second dielectric layers. The first and second electrodes are formed on the first and second dielectric layers, such that an RF signal may be input to and output from the carbon nanotube array via the first and second signal guides. A third electrode is disposed over the carbon nanotube array and is used to voltage bias the array.

Radio frequency device and method using a carbon nanotube array

A frequency selective limiter operative in a magnetostatic surface mode with a pair of parallel microstrip transducers formed on a substrate and having a length at least equal to the width of an overlaying YIG film ranging in thickness from about 0.1 &#x3bc;m and about 5.0 &#x3bc;m and having a width equal to or less than about 20. mm and which is biased by a permanent magnetic field applied in the plane of the film parallel to the transducers so that magnetostatic surface waves propagate therebetween in the YIG film so as to provide a limiter threshold level in the range of &#x2212;75 dBm to &#x2212;35 dBm. The transducers have specific spacings and dimensions.

Low threshold power frequency selective limiter for GPS

A narrow bandwidth (1 to &gt;100 MHz) HTS microwave filter (30 or 50) is described which is tunable over a moderate frequency range (100 to &gt;1000 MHz at X-band). The low loss (&lt;1 dB) and GHz/microsecond tuning rates enable the filter to operate as a radar preselector filter. The filter consists of a multi-pole microstrip or stripline HTS coupled one-half resonator pattern deposited onto a ferrite substrate (32 or 52, 54). The ferrite substrate is operated in a latching mode like that in the operation of digital phase shifters. The filter tunability arises from the variation of the effective permeability with the remanent magnetization.

Rapidly tunable, high-temperature superconductor, microwave filter

A planar phase shifter formed of multiple layers of a ferrite. Selected layers of the ferrite are patterned with a conductor and the multiple layers of magnetic dielectric and conductor are cofired. The phase shifter is fabricated by first obtaining ferrite powder. Then, layers of the ferrite are made, preferably by tape casting. Next the ferrite layers are metallized by applying selected amounts of conductive metals in a selected pattern upon the tape. Selected numbers of vias are placed through selected layers of tape and conductive metal is placed in the vias to provide vertical connections through the layers. The tape layers are then stacked in a predetermined order and are laminated. The laminated stack of layers is then fired to a temperature of approximately 800.degree. C. to 1000.degree. C., sintering the laminated layers into one integrated structure.

Planar phase shifters using low coercive force and fast switching,

This invention is a design for lateral field film bulk acoustic resonators (LF-FBAR). All electrodes in this design are located on one surface of the piezoelectric material, thereby simplifying manufacturing and improving performance. The gap between electrodes is limited to a specified dimension to maximize the efficiency of the device. Single and multi-pole devices are described. Barium magnesium fluoride and lithium niobate are specified as the piezoelectric material for high frequency applications.

Lateral field FBAR

The invention is directed to an FSL in which a pair of planar ferrite members have planar surfaces in confronting relationship and at least one signal carrying conductor is supported between the ferrites and is closely coupled thereto. A magnetic biasing field is established having field lines disposed at an angle relative to the conductor such that the FSL has an increased attenuation at low frequencies resulting in a relatively flat limiting characteristic across the bandwidth. The conductor may lie in a plane parallel to the field lines or transverse to the field lines. In one embodiment the conductor zigzags in the plane of the field.

Frequency selective limiter with flat limiting response

A frequency selective limiting device is described incorporating a pair of generally planar ferrite members and a plurality of signal-carrying conductors positioned between the ferrite members. The plurality of signal-carrying conductors are located on a single YIG substrate. A D.C. bias field may be generated by a common magnetic source positioned on the surface of the substrate opposite the plurality of signal-carrying conductors.

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Murrysville, PA, United States of America

John D Adam