Xerox Corporation

Palo Alto Research Center Inc.

John Christopher Knights

Robert Anthony Street

Julie A Bert

Peter Kiesel

Stephan V Drappel

Nicholas K Sheridon

Gerald A Domoto

Alex N Hegyi

Henry R Till

James B Boyce

Richard G Crystal

Joseph Michael Crowley

Steven J Grammatica

Joseph Mort

Frank Jansen

Michael A Morgan

Harold M Anderson

Aron Sereny

John M Lennon

Rodney B Proulx

Patrick A O'Connell

Chuang C Tsai

So V Tien

Maria S Donigan

Robert L Battey

Robert A Barker

A system comprises an imaging device that includes a two dimensional array of pixels. Each pixel of the array includes a first optical filter having a first pass band arranged to filter excitation light reflected by a moving object and a first detector configured to detect light transmitted through the first optical filter and to generate a first electrical signal. Each pixel of the array also includes a second optical filter having a second pass band arranged to filter excitation light reflected by a moving object and a second detector configured to detect light transmitted through the second optical filter and to generate a second electrical signal. The imaging device further includes circuitry that generates output signals from each of the pixels based on the first electrical signal and the second electrical signal of the pixel. The output signal includes information about the speed and direction of the moving object.

Doppler imager

Various designs are provided to mitigate or solve limitation on the bendability of an active matrix backplanes: including breaking large rigid silicon chips (ICs) into smaller rigid ICs, changing the orientation of rigid ICs, changing the placement of the ICs on the array, thinning the ICs to the point where the Si is flexible, and replacing the ICs with high quality TFT processing which can be done on flexible substrates.

Alternative designs for addressing contacts that enhance bend ability of TFT backplanes

Bending a flexible x-ray detector to image a curved structure or object will distort the object appearance when compared to an image captured by a flat/rigid detector. An image distortion of this type can be corrected when the shape (relative bend position) of the x-ray detector is known. Incorporating strain sensors on the flexible x-ray detector makes it possible to record the local bend of the flexible x-ray detector when an image is taken. This shape information can be used to either label or correct for the image distortions created by bending the x-ray detector to assist users more accustomed to viewing images produced by flat/rigid x-ray detectors.

Flexible x-ray sensor with integrated strain sensor

Transitioning conventional x-ray detector materials and structures to bendable or flexible (e.g., plastic) substrates makes them rugged against breakage when dropped but exposes the detectors to damage if bent. Disclosed are bendable digital x-ray detector structures that are rugged with regard to bending as well as dropping. The structures provide strain matching between layers so that a detector backplane is in and/or near the mechanical neutral plane and therefore less susceptible to bending stress.

Bendable x-ray detector with TFT backplane in the neutral plane

A flexible TFT backplane includes, a flexible substrate, a first set of address line contacts associated with the substrate, and a second set of address line contacts associated with the substrate. The first set of address line contacts and the second set of address line contacts are located at opposite sides of the substrate from each other, defining a vertical direction. A first set of address lines designed to run in one of the vertical direction and a diagonal or non-vertical direction with respect to the defined vertical direction, with the first set of address lines connected to the first set of address line contacts. Also provided is a second set of address lines designed to run in one of a diagonal or non-vertical direction with respect to the defined vertical direction, and a combination of diagonal and horizontal directions with respect to the vertical direction, with the second set of address lines connected to the second set of address line contacts. At least one insulating layer is located between the first set of address lines and the second set of address lines, and a plurality of TFTs arranged in an array, within the boundaries of the substrate, wherein the TFTs are addressed by the first set of address lines and the second set of address lines.

Bendable TFT backplane with addressing contacts at opposite ends

A method of forming a contact structure and a contact structure. The contact structure includes a contact location, and contact elements disposed substantially on the contact location, at least one such contact element including a deformable center and a conducting layer covering at least a part of the deformable center.

Conductive bump with a plurality of contact elements

An image sensor is disclosed including passivation walls extending above the pixel contact pads into a photosensor layer (e.g., amorphous silicon) such that the pixel contact pads are isolated to reduce cross-talk. The passivation walls are formed from SiO or SiON to further reduce cross-talk. An embodiment includes metal structures provided under interface regions (e.g., under the passivation walls) separating adjacent pixels that are negatively biased to prevent cross-talk, and optionally extend under the contact pad to increase pixel capacitance. One embodiment omits p-type dopant from the lower amorphous silicon photodiode layer, and additional photodiode material layers are disclosed. Another disclosed sensor structure utilizes a textured surface to increase light absorption. A color filter structure for image sensors is also disclosed.

Image sensor with performance enhancing structures

Systems in one embodiment of the present invention comprise rotating element sheet material with a microstructured substrate component, and a method of assembling such rotating element sheet material. A first embodiment of the present invention comprises a substrate, enabling fluid, a plurality of rotatable elements of a first class, and a plurality of rotatable elements of a second class, where the substrate comprises a cavity-containing matrix having a plurality of cavities of a first class and a plurality of cavities of a second class, where the plurality of rotatable elements of a first class are disposed within the plurality of cavities of a first class, and the plurality of rotatable elements of a second class are disposed within the plurality of cavities of a second class, and where the plurality of cavities of a first class and the plurality of cavities of a second class are arranged in a regular, repeating pattern in a substantially single layer, or alternatively, the plurality of cavities of a first class and the plurality of cavities of a second class are arranged to define macroscopic regions displaying common aspects. A further embodiment of the present invention includes a method of macroscopically addressing rotating element sheet material.

Rotating element sheet material with microstructured substrate and method of use

An amorphous silicon electrographic writing head assembly which reduces the voltage drift in the high voltage driving transistor. The writing head including a substrate having a first surface and a second surface, the first surface having thin film elements fabricated thereon, the first surface having a first region, a second region, and a third region, the first region including an array of writing electrodes, the second region including an array of high voltage transistors, and the third region including interconnecting circuitry for connecting the thin film elements to a connector. The head also includes a first cover glass fixed to the first surface of the array covering the first region and a second cover glass fixed to the first surface of the array covering the third region. Also included are a first side glass fixed to the second surface of the array and a second side glass fixed to the first cover glass and the second cover glass whereby a channel is formed over the second region of the array where the high voltage driving transistor is located.

Amorphous silicon electrographic writing head assembly with protective

Disclosed are ionographic imaging apparatuses and processes. One apparatus comprises an imaging means, means for applying to the imaging means a liquid material capable of forming a dielectric peel layer adhering to the imaging means, ionographic writing means for generating a latent image on the peel layer, means for developing the latent image on the peel layer, and means for simultaneously transferring the peel layer bearing the developed image from the imaging means to a substrate and affixing the peel layer bearing the developed image to the substrate. In another embodiment, the apparatus employs a process which comprises applying to an imaging means a liquid material capable of forming a dielectric peel layer adhering to the imaging means, forming a first latent image on the peel layer with an ionographic writing means, developing the first latent image with a first developer, forming a second latent image on the peel layer containing the first developed image with an ionographic writing means, developing the second latent image with a second developer, forming a third latent image on the peel layer containing the first and second developed images with an ionographic writing means, developing the third latent image with a third developer, and simultaneously transferring the portion of the peel layer that bears the developed images to a substrate and affixing the peel layer bearing the developed images to the substrate. A further embodiment is directed to an apparatus and process for sequentially forming and developing primary color images on an imaging means to form a full color image, followed by trasnsferring the fully formed image to a substrate, wherein the developers employed contain a release agent.

Imaging apparatuses and processes

A method of doping selected areas of semiconductor material in the fabrication of integrated circuit devices, including placing a semiconductor substrate in a glow discharge reactor, introducing reactant gases into the reactor, subjecting the reactant gases to a plasma discharge, depositing, upon the substrate, a dopant carrier layer comprising an amorphous semiconductor material having a predetermined dopant concentration, controlling the thickness of the dopant carrier layer, and driving the dopant atoms out of the amorphous semiconductor dopant carrier layer into the selected areas of the semiconductor substrate by means of a controlled elevated temperature anneal.

Controlled isotropic doping of semiconductor materials

An electrophotographic photoresponsive device for use in electrophotography comprised of a supporting substrate, and an amorphous silicon composition containing from about 25 parts per million by weight to about 1 weight percent of boron compensated with from about 25 parts per million by weight to about 1 weight percent of phosphorous, nitrogen, or arsenic. Also disclosed is a photoresponsive electrophotographic device comprised of a supporting substrate, an uncompensated amorphous silicon layer and an amorphous silicon composition containing from about 100 parts per million by weight to about 1 weight percent of boron compensated with from about 25 parts per million by weight to about 1 weight percent of phosphorous, wherein the compensation increases from zero percent compensation to one percent compensation, for a distance of from about 0.1 microns to about 5 microns, which distance extends from the uncompensated amorphous silicon layer to the compensated amorphous silicon layer or wherein the photoresponsive device is comprised of a supporting substrate, an uncompensated amorphous silicon composition, a compensated amorphous silicon composition, containing from about 100 parts per million by weight to about 1 weight percent of boron compensated with from about 25 parts per million by weight to about 1 weight percent of phosphorous, wherein the compensation increases from zero percent compensation to one percent compensation, for a distance of from about 0.1 microns to about 5 microns, which distance extends from the uncompensated amorphous silicon layer to the compensated amorphous silicon layer and a top overcoating layer of silicon nitride, silicon carbide, or amorphous carbon.

Electrophotographic devices containing compensated amorphous silicon

In an r.f. glow discharge system, a plurality of hollow electrodes are positioned circumferentially about a central point forming a circular array or squirrel cage. A workpiece is supported within the squirrel cage and relative rotational movement between the squirrel cage and the workpiece is provided. A plurality of apertures are provided along the surface of each electrode and aligned toward the surface of the workpiece. Alternatively, each electrode may further consist of a pair of inner and outer hollow tubes each with a plurality of apertures along its length with the apertures of the inner tube being adjacent to and spaced from the apertures of the outer tube but offset therefrom. The arrangement is best suited for a cylindrically shaped workpiece, e.g., a photoreceptor drum.

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Soquel, CA, United States of America

John Christopher Knights