International Business Machines Corporation

John Christopher Flake

Evan G Colgan

Robert L Wisnieff

Paul Stephen Andry

Lubomyr Taras Romankiw

Peter M Fryer

Eugene John O'Sullivan

Bruno Michel

Takatoshi Tsujimura

Tricia Lynn Breen

William S Graham

An electroplating apparatus, in accordance with the present invention, includes a plurality of chambers. A first chamber includes an anode therein. The first chamber has an opening for delivering an electrolytic solution containing metal ions onto a surface to be electroplated. The surface to be electroplated is preferably a cathode. A second chamber is formed adjacent to the first chamber and has a second opening in proximity of the first opening for removing electrolytic solution containing metal ions from the surface to be electroplated. The plurality of chambers are adapted for movement in a first direction along the surface to be electroplated.

Electroplating apparatus and four mask TFT array process with electroplated metal

The process of derivatization and patterning of surfaces, and more particularly to the formation of self-assembled molecular monolayers on metal oxide surfaces using microcontact printing and the derivative articles produced thereby.

Method of forming patterned nickel and doped nickel films via microcontact printing and uses thereof

A method for forming an electrically conductive layer having predetermined patterns for semiconductor devices includes providing a substrate, forming an insulation layer having OH functional groups on the substrate, forming a patterned polymer layer on the insulation layer, etching the insulation layer to create a patterned insulation layer which has the same patterns as the patterned polymer layer, stripping the patterned polymer layer to expose the patterned insulation layer, treating the patterned insulation layer with a coupling agent which reacts with the OH functional groups, treating the patterned insulation layer with a catalyst-containing solution in which the catalyst reacts with the coupling agent, and depositing electrically conductive material on the patterned insulation layer which is catalytically active.

Method for forming patterns for semiconductor devices

A method for forming ohmic contacts for semiconductor devices, in accordance with the present invention, includes forming a layer containing metal which includes dopants integrally formed therein. The layer containing metal is patterned to form components for a semiconductor device, and a semiconductor layer is deposited for contacting the layer containing metal. The semiconductor device is annealed to outdiffuse dopants from the layer containing metal into the semiconductor layer to form ohmic contacts therebetween.

Method of forming ohmic contacts using a self doping layer for thin-film transistors

Electroplating apparatus

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Mohegan Lake, NY, United States of America

John Christopher Flake