Hewlett-packard Development Company, L.p.

John Chen

Chien-Hua Chen

Sriram Ramamoorthi

Sadiq Bengali

Timothy F Myers

S Jonathan Wang

Edward Enciso

James Weaver

Tom Cooney

High-voltage CMOS devices and low-voltage CMOS devices are integrated on a common substrate by forming a sacrificial film over at least active device areas, lithographically defining device active regions of the high-voltage CMOS devices, implanting dopants selectively through the sacrificial film into the lithographically defined device active regions of the high-voltage CMOS devices, diffusing the implanted dopants, removing the sacrificial film, and subsequently forming low-voltage CMOS devices.

Integrating high-voltage CMOS devices with low-voltage CMOS

A method is disclosed for forming a single crystal cantilever and tip on a substrate. The method can include the operation of defining an implant area on the substrate with a layer of photoresist. A further operation can be implanting oxygen into the substrate in the implant area to a predetermined depth to form a buried oxide layer. The buried oxide layer can define a bottom of the single crystal cantilever and tip. Another operation can involve shaping the single crystal cantilever and tip from the substrate above the buried oxide layer.

Method for forming a cantilever and tip

A photonic assisted emitter including an at least partially transparent electron source layer, a thin metal layer; and a tunneling layer disposed between said at least partially transparent electron source layer and said thin metal layer.

Transparent electron source emitter device and method

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Corvallis, OR, United States of America

John Chen