Texas Instruments Corporation

Raytheon Company

Raytheon Ti Systems, Inc.

John Charles Ehmke

Virgil Cotoco Ararao

Charles L Goldsmith

Billy D Ables

Zhimin J Yao

Roland W Gooch

Ivan Kmecko

Lance W Barron

Susan M Eshelman

James L Cheever

Simon Joshua Jacobs

Adam Joseph Fruehling

Arthur Monroe Turner

James Norman Hall

William Craig McDonald

Sean Christopher O'Brien

James Carl Baker

Brandon William Pillans

James M Irion, Ii

Vincent C Lopes

Arun Gupta

Scott Patrick Overmann

Richard E Hodges

Divyanshu Agrawal

Shea Chen

Stephen L Whicker

John Paul Harris, Jr

Mark R Skokan

Andrew Malczewski

R Thomas Dover

Charles A Franda

Allan R Logan

Toby R Linder

In described examples, a first metal layer is configured along a periphery of a cavity to be formed between a first substrate and a second substrate. A second metal layer is adjacent the first metal layer. The second metal layer includes a cantilever. The cantilever is configured to deform by bonding the first substrate to the second substrate. The deformed cantilevered is configured to impede contaminants against contacting an element within the cavity.

Vertical shear weld wafer bonding

A system includes an optical film stack, where the optical film stack includes a substrate and a first inorganic layer on the substrate. The optical film stack also includes a first dielectric layer on the first inorganic layer and a first metal layer on the first dielectric layer. The optical film stack also includes a second dielectric layer on the first metal layer and a second inorganic layer on the second dielectric layer. The optical film stack also includes a second metal layer on the second inorganic layer.

Dark mirror thin films

A method includes attaching an optically transparent wafer to a first surface of an interposer wafer. The interposer wafer has a second surface opposite the first surface, and the second surface has a first channel therein. The method further includes attaching the interposer wafer to a first surface of a semiconductor wafer, and etching a second channel through the optically transparent wafer and through the interposer wafer. The method then includes applying wax into the second channel, and sawing through the optically transparent wafer and through at least a portion of the interposer wafer to form a third channel having a width that is wider than a width of the second channel. The wax is then removed to expose a portion of the first surface of the semiconductor wafer.

Selective wafer removal process for wafer bonding applications

In described examples, a first device on a first surface of a substrate is coupled to a structure arranged on a second surface of the substrate. In at least one example, a first conductor arranged on the first surface is coupled to circuitry of the first device. An elevated portion of the first conductor is supported by disposing an encapsulate and curing the encapsulate. The first conductor is severed by cutting the encapsulate and the first conductor. A second conductor is coupled to the first conductor. The second conductor is coupled to the structure arranged on the second surface of the substrate.

Through-substrate conductor support

In described examples, a transient liquid phase (TLP) metal bonding material includes a first substrate and a base metal layer. The base metal layer is disposed over at least a portion of the first substrate. The base metal has a surface roughness (Ra) of between about 0.001 to 500 nm. Also, the TLP metal bonding material includes a first terminal metal layer that forms an external surface of the TLP metal bonding material. A metal fuse layer is positioned between the base metal layer and the first terminal metal layer. The TLP metal bonding material is stable at room temperature for at least a predetermined period of time.

Stabilized transient liquid phase metal bonding material for hermetic wafer level packaging of MEMS devices

In described examples, a first metal layer is arranged along a periphery of a cavity to be formed between a first substrate and a second substrate. A second metal layer is arranged adjacent to the first metal layer, where the second metal layer includes a cantilever. The cantilever is arranged to deform in response to forces applied from a contacting structure of the second substrate during bonding of the first substrate to the second substrate. The deformed cantilevered is arranged to impede contaminants against contacting an element within the cavity.

Hermetic vertical shear weld wafer bonding

In described examples, an image-generating panel is arranged for modulating a projection beam to include a modulated optical image. A cooling device is arranged to transfer heat received from the image-generating panel to a heat sink. The cooling device is arranged to receive the projection beam on a first side and to transmit the projection beam from a second side. The heat received from the image-generating panel can include heat generated by the image-generating panel in response to incidental sunlight.

Transparent display panel cooling

In described examples, a hermetic package of a microelectromechanical system (MEMS) structure includes a substrate having a surface with a MEMS structure of a first height. The substrate is hermetically sealed to a cap forming a cavity over the MEMS structure. The cap is attached to the substrate surface by a vertical stack of metal layers adhering to the substrate surface and to the cap. The stack has a continuous outline surrounding the MEMS structure while spaced from the MEMS structure by a distance. The stack has: a first bottom metal seed film adhering to the substrate and a second bottom metal seed film adhering to the first bottom metal seed film; and a first top metal seed film adhering to the cap and a second top metal seed film adhering to the first top metal seed film.

Hermetically sealed MEMS device and its fabrication

A MEMs actuator device and method of forming includes arrays of actuator elements. Each actuator element has a moveable top plate and a bottom plate. The top plate includes a central membrane member and a cantilever spring for movement of the central membrane member. The bottom plate consists of two RF signal lines extending under the central membrane member. A MEMs electrostatic actuator device includes a CMOS wafer, a MEMs wafer, and a ball bond assembly. Interconnections are made from a ball bond to an associated through-silicon-via (TSV) that extends through the MEMS wafer. A RF signal path includes a ball bond electrically connected through a TSV and to a horizontal feed bar and from the first horizontal feed bar vertically into each column of the array. A metal bond ring extends between the CMOS wafer and the MEMS wafer. An RF grounding loop is completed from a ground shield overlying the array to the metal bond ring, a TSV and to a ball bond.

MEMS electrostatic actuator device for RF varactor applications

A method of leak detection of hermetically sealed cavities semiconductor devices is provided. Scribe streets are formed with access from each packaged device on a first substrate to the edge of the first substrate. The first substrate is attached to a second substrate, forming gaps between the two substrates. A cavity is formed around a packaged device on the first substrate by attaching a bond ring to the first substrate and an optically transparent window above the bonding ring. The cavity is evacuated. A high powered laser beam strikes the top surface of the device on the first substrate within the cavity and creates a vertical surface displacement of the first substrate. The vertical surface displacement is monitored using a separate interrogation laser beam. Leakage of the cavity can be measured by characterizing the resonance decay rate, Q.

Leak detection using cavity surface quality factor

A hermetic package comprising a substrate () having a surface with a MEMS structure () of a first height (), the substrate hermetically sealed to a cap () forming a cavity over the MEMS structure; the cap attached to the substrate surface by a vertical stack () of metal layers adhering to the substrate surface and to the cap, the stack having a continuous outline surrounding the MEMS structure while spaced from the MEMS structure by a distance (); the stack having a bottom first metal seed film () adhering to the substrate and a bottom second metal seed film () adhering to the bottom first seed film, both seed films of a first width () and a common sidewall (); further a top first metal seed film () adhering to the cap and a top second metal seed film () adhering to the top first seed film, both seed films with a second width () smaller than the first width and a common sidewall (); the bottom and top metal seed films tied to a metal layer () including gold-indium intermetallic compounds, layer () having a second height () greater than the first height and encasing the seed films and common sidewalls.

Hermetically-sealed MEMS device and its fabrication

A hermetic package comprising a substrate () having a surface with a MEMS structure () of a first height (), the substrate hermetically sealed to a cap () forming a cavity over the MEMS structure; the cap attached to the substrate surface by a vertical stack () of metal layers adhering to the substrate surface and to the cap, the stack having a continuous outline surrounding the MEMS structure while spaced from the MEMS structure by a distance (); the stack having a bottom metal seed film () adhering to the substrate with a first width (), and further a top metal seed film () adhering to the cap with a second width () smaller than the first width, the top metal seed film tied to a layer () including gold-indium intermetallic compounds, layer () having a height greater than the first height.

A hermetically sealed package includes a lid () hermetically bonded to a wafer or substrate (), with a chamber therebetween defined by a recess () in the lid. A circuit device () such as MEMS device is provided within the chamber on the substrate. A plurality of vias (-) are provided through the substrate, and each have a structure which facilitates a hermetic seal of a suitable level between opposite sides of the substrate. The vias provide electrical communication from externally of the assembly to the device disposed in the chamber.

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Garland, TX, United States of America

John Charles Ehmke