Trumpf Photonics, Inc.

Innovative Photonic Solutions, Inc.

Sarnoff Corporation

Princeton Lightwave, Inc.

Other

David Sarnoff Research Center, Inc.

Novatrans Group Sa

Lamina Ceramics, Inc.

Innovative Photoic Solutions, Inc.

John Charles Connolly

Dmitri Z Garbuzov

Joseph H Abeles

Scott L Rudder

Donald E Ackley

Harald R Guenther

Viktor Borisovich Khalfin

Louis Anthony DiMarco

Ramon Ubaldo Martinelli

Ashok Narayan Prabhu

Barry Jay Thaler

Ellen Schwartz Tormey

Daniel Mandelik

John Francis Roulston

Robert Frank Karlicek, Jr

William Edward Stephens

Mark Stuart Hammond

Ian Ferguson

Ponnuswamy Palanisamy

Hao Lee

Joseph B Mazzochette

Attiganal Narayanaswamy Sreeram

Raymond Louis Camisa

Greg W Charache

Raymond Joseph Menna

Claus Schnitzler

Holger Schlüter

Giora Griffel

Nancy Ann Morris

Victor Borisovich Khalfin

Joseph B Gannon

Attiganal Narayanaswamysreeram

Nancy A Morris

Robert V Chimenti

Benjamin L Carlin

Mikhail Alexandrovich Maiorov

A compact dual-wavelength Raman probe using two laser sources each providing Raman excitation light at a different wavelength is disclosed causing Raman scattering in a fingerprint region associated with one excitation wavelength and causing Raman scattering in a stretch region, which are detected by the same detector array.

Dual wavelength Raman probe with spectral concatenation of data

A hybrid external cavity laser and a method for configuring the laser having a stabilized wavelength is disclosed. The laser comprises a semiconductor gain section and a volume Bragg grating, wherein a laser emission from the semiconductor gain section is based on a combination of a reflectivity of a front facet of the semiconductor gain section and a reflectivity of the volume Bragg grating and the reflectivity of the semiconductor gain section and the volume Bragg grating are insufficient by themselves to support the laser emission. The hybrid cavity laser further comprises an etalon that provides further wavelength stability.

Wavelength stabilized diode laser

A thermo-electric cooling (TEC) system is presented for cooling of a device, such a laser for example. The TECT system comprises first and second heat pumping assemblies, and a control unit associated at least with said second heat pumping assembly. Each heat pumping assembly has a heat source from which heat is pumped and a heat drain through which pumped heat is dissipated. The at least first and second heat pumping assemblies are arranged in a cascade relationship having at least one thermal interface between the heat source of the second heat pumping assembly and the heat drain of the first heat pumping assembly, the heat source of the first heat pumping assembly being thermally coupled to the electronic device which is to be cooled by evacuating heat therefrom. The control unit is configured and operable to carry out at least one of the following: (i) operating said second heat pumping assembly to provide a desired temperature condition such that temperature of the heat drain of said first heat pumping assembly is either desirably low or by a certain value lower than temperature of the heat source of said first heat pumping assembly; and (ii) operating said second heat pumping assembly to maintain predetermined temperature of said thermal interface.

Thermo-electric cooling system and method for cooling electronic devices

A hybrid external cavity laser and a method for configuring the laser having a stabilized wavelength are disclosed. The laser comprises a semiconductor gain section and a volume Bragg grating, wherein a laser emission from the semiconductor gain section is based on a combination of a reflectivity of a front facet of the semiconductor gain section and a reflectivity of the volume Bragg grating and the reflectivity of the semiconductor gain section and the volume Bragg grating are insufficient by themselves to support the laser emission. The hybrid cavity laser further comprises an etalon that provides further wavelength stability.

A hybrid external cavity laser (HECL) system comprises a diode laser, collection and collimation optics, and a volume Bragg grating, emits radiation at a single wavelength with a short-term wavelength stability in the order of at least one part in a billion The wavelength stability is achieved by use of a thermal management system, comprising inner and outer housings, each containing a temperature sensor, and electronic circuitry that monitors the temperatures and controls both the laser diode current and a thermoelectric cooler based on temperatures determined from said temperature sensors. The laser system is packaged in a compact enclosure that minimizes waste heat, facilitating use in applications that have heretofore employed stable, single-frequency lasers, including He&#x2014;Ne lasers.

Wavelength-stabilized diode laser

Disclosed are systems and methods for using a semiconductor optical amplifier (SOA) as an optical modulator for pulsed signals. In accordance with the principles of the invention, the SOA can be biased with a negative voltage to suppress transmission and improve modulator extinction and biased with a positive pulsed signal with sufficient amplitude to forward bias the amplifier (SOA), both transmitting the carrier and increasing its amplitude by means of a gain provided by the SOA under forward biased conditions. In addition, the forward bias voltage may be selected to compensate for losses within the SOA.

Method and system for operating semiconductor optical amplifiers

An adjustable demolition leverage tool capable of removable and adjustable connection to various rotationally and positionably adjustable tool heads being specifically shaped to achieve various demolition tasks. The tool heads are configured so the distance between the two side edges of a tool head may be extended or reduced and the angle of the leading edge of the tool head with respect to the handle of the leverage tool may also be adjusted.

Adjustable demolition leveraging tool and method

A light source includes a semiconductor laser diode and a narrow spectral and spatial bandwidth reflector in optical communication with respect to the semiconductor diode laser and aligned with the output beam of the diode laser, such that a portion of the light in the output beam is reflected back into the laser.

High-power semiconductor laser

A semiconductor laser diode having increased efficiency and therefore increased power output. The laser diode includes a body of a semiconductor material having therein a waveguide region which is not intentionally doped so as to have a doping level of no greater than about 5&#xd7;10/cm. Within the waveguide region is means, such as at least one quantum well region, for generating an optical mode of photons. Clad regions of opposite conductivity type are on opposite sides of the waveguide region. The thickness of the waveguide region, a thickness of at least 500 nanometers, and the composition of the waveguide and the clad regions are such so as to provide confinement of the optical mode in the waveguide region to the extent that the optical mode generating does not overlap into the clad regions from the waveguide region more than about 5%.

High power semiconductor laser diode

A semiconductor laser diode and method are described, wherein the path of the current through the device between the positive and negative conductors is controlled. Lateral spread of the gain current in the active region is prevented by implanting protons in areas of the active layer flanking a desired gain region. The implanted regions become less conductive, and prevent lateral spread of the gain current. The position of the implanted regions can be selected so that the gain current only crosses a portion of the active layer that supports desired lateral modes of the laser light.

Control of current spreading in semiconductor laser diodes

Integrated packages incorporating multilayer ceramic circuit boards mounted on a metal support substrate can be used for temperature control by the metal support substrate. Various electronic components, as well as additional temperature control devices, can be connected to the circuit boards and to the metal support substrate to control or regulate the temperature of operation of the components. The integrated package can be hermetically sealed with a lid.

Low temperature co-fired ceramic-metal packaging technology

A semiconductor diode laser has a characteristic output with a single mode vertical far-field divergence. The semiconductor diode laser includes a waveguide with a first refractive index and a quantum well embedded in the center of the waveguide. On one side of the waveguide sits a p-type cladding layer with a second refractive index smaller than the first refractive index. On the other side of the waveguide sits an n-type cladding layer with a third refractive index smaller than the first refractive index and larger than the second refractive index.

Semiconductor diode lasers with improved beam divergence

Growing community of inventors

Clarksburg, NJ, United States of America

John Charles Connolly