Atmel Corporation

Aeroflex Colorado Springs Inc.

Aeroflex Utmc Microelectronics, Inc.

John Chaffee

Darwin Gene Enicks

David B Kerwin

Scott M Tyson

Richard L Woodruff

Damian A Carver

A method for pseudomorphic growth and integration of an in-situ doped, strain-compensated metastable compound base into an electronic device, such as, for example, a SiGe NPN HBT, by substitutional placement of strain-compensating atomic species. The invention also applies to strained layers in other electronic devices such as strained SiGe, Si in MOS applications, vertical thin film transistors (VTFT), and a variety of other electronic device types. Devices formed from compound semiconductors other than SiGe, such as, for example, GaAs, InP, and AlGaAs are also amenable to beneficial processes described herein.

Integrated circuit structures containing a strain-compensated compound semiconductor layer and methods and systems related thereto

A method for manufacturing a radiation hardened semiconductor device, having defined active region and isolation region. The isolation region containing an isolation material and active region containing a transition region between active and isolation region, sometimes denoted a bird's beak region. Wherein the transition region is implanted with germanium and boron, to prevent formation of leakage paths between active devices, or within an active device. The implanted area can be further limited to that area of the transition region that is adapted to be covered by a gate material, such as polysilicon.

Radiation hardened semiconductor device

Growing community of inventors

Colorado Springs, CO, United States of America

John Chaffee