American Telephone & Telegraph Co., At&t Bell Laboratories

John C Hensel

Anthony F Levi

Raymond T Tung

John M Gibson

A method for producing, without etching, a perforated layer of epitaxial metal silicide, especially CoSi.sub.2, on a single crystal Si substrate, with epitaxial Si overlying the silicide layer. The layer thickness, and the number and size of the openings in the layer are such as to make the structure suitable as an electronic device, in particular, as a permeable base transistor. The number and/or size of the openings is a function of processing parameters such as the substrate orientation, the annealing temperature of the film, or the Co/Si ratio of the deposited material. A device comprising a perforated silicide layer is also disclosed.

Semiconductor device comprising a perforated metal silicide layer

Described is a method for producing metal silicide/silicon heterostructures. The method comprises depositing a very thin Si 'template' layer on a relatively cold (&lt;200.degree. C.) silicide substrate, raising the substrate temperature into the approximate range 500.degree.-800.degree. C. and maintaining it there while depositing further Si onto the template. The resulting Si layer can be of high crystalline perfection. The silicide advantageously is CoSi.sub.2, Co.sub.x Ni.sub.1-x Si.sub.2, CoSi.sub.y Ge.sub.2-y, or NiSi.sub.2, with 0&lt;x&lt;1,1&lt;y&lt;2.

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Summit, NJ, United States of America

John C Hensel