Micron Technology Incorporated

John C Gonzales

William A Polinsky

Bill Crane

Steven Ott

A method is provided for forming polymer on an interior surface of a reaction chamber. A polymer-forming gas is introduced into the chamber during the etching of a photoresist layer of a semiconductor wafer within the reaction chamber and the environment is regulated to form the polymer on the interior surface of the chamber. The polymer thus formed reduces the standard deviation of the critical dimensions of the semiconductor wafer. A method for the manufacture of integrated circuits is also provided.

Conditioning of a reaction chamber

A method is provided for forming polymer on an interior surface of a reaction chamber. A polymer-forming gas is introduced into the chamber and the environment is regulated to form the polymer on the interior surface of the chamber. Methods for the manufacture of integrated circuits, electronic devices, and electronic systems, are also provided.

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Kuna, ID, United States of America

John C Gonzales