Kopin Corporation

John C C Fan

Jeffrey Jay Jacobsen

Matthew M Zavracky

Stephen A Pombo

Rodney J Bumgardner

Alan Richard

Wen-Foo Chern

Hong K Choi

Bor-Yeu Tsaur

Jagdish Narayan

Hiap L Ong

Brenda D Dingle

Robert W McClelland

Frederick P Herrmann

Tchang-Hun Oh

Paul M Zavracky

Declan Halpin

Kenneth A Kokinakis

Lee A Kuczewski

Jason Lo

Jinlin Ye

Jyh Chia Chen

Shirong Liao

Mark B Spitzer

Christopher Iain Parkinson

Peter A Ronzani

Ronald P Gale

Dashen Fan

Ernesto Carlos Martinez Villalpando

Yong Seok Seo

Jang Ho Kim

Kenny W Y Chow

Shambhu Shastry

Schang-Jing Hon

Jyh-Chia Chen

Hong-Kyun Choi

Paul Baker

Steve Tchang-Hun Oh

Ron Gale

Kenney W Y Chow

Ken Fox

The invention is a multi-microphone voice processing SoC primarily for head worn applications. It bypasses the use of conventional pre-amp voice CODEC (ADC/DAC) chips all together by replacing their functionality with digital MEMS microphone(s) and digital speaker driver (DSD). Functionality necessary for speech recognition such as noise/echo cancellation, speech compression, speech feature extraction and lossless speech transmission are also integrated into the SoC. One embodiment is a noise cancellation chip for wired, battery powered headsets and earphones, as smart-phone accessory. Another embodiment is as a wireless Bluetooth noise cancellation companion chip. The invention can be used in headwear, eyewear glass, mobile wearable computing, heavy duty military, aviation and industrial headsets and other speech recognition applications in noisy environments.

Digital voice processing method and system for headset computer

A handheld wireless display device, having at least SVGA-type resolution, includes a wireless interface, such as Bluetooth&#x2122;, WiFi&#x2122;, Wimax&#x2122;, cellular or satellite, to allow the device to utilize a number of different hosts, such as a cell phone, personal computer, media player. The display may be monocular or binocular. Input mechanisms, such as switches, scroll wheels, touch pads, allow selection and navigation of menus, playing media files, setting volume and screen brightness contrast, activating host remote controls or performing other commands. The device may include MIM diodes, Hall effect sensors, or other position transducers and/or accelerometers to detect lateral movements along and rotational gestures around the X, Y and Z axes as gesture inputs and movement queues. These commands may change pages, scroll up, down or across an enlarged screen image, such as for web browsing. An embedded software driver permits replicating a high-resolution screen display from a host PC.

Head worn wireless computer having high-resolution display suitable for use as a mobile internet device

Audio eyewear

A wearable electronic display that includes an eyewear frame having a first side frame portion. A display module with a micro-display for generating images can be mounted to the first side frame portion. The display module can have an elongate portion with an image exit window positioned for directing viewable images to a user's eye.

Spectacle with invisible optics

The invention relates to a microdisplay system that utilizes a small high resolution active matrix liquid crystal display with an illumination system and a magnifying optical system to provide a hand held communication display device. The system can employ an LED illumination system and cellular communication or processor circuits within a compact housing to provide communication devices such as pagers, telephones, televisions, and hand held computer devices with a compact high resolution video display.

Microdisplay for portable communication systems

An active matrix color crystal display has an active matrix circuit, a counterelectrode panel and an interposed layer of liquid crystal. The active matrix display is located in a portable microdisplay system that has a display computer that generates images to be displayed on the liquid crystal display and connected to the active matrix liquid crystal display. A data link transmits data at a rate of speed of greater than 200 Mbytes per second in series for at least a portion between the display computer and the active matrix liquid crystal display. In a preferred embodiment, the display system has a randomizing device that alternates the amplifier through which an analog video signal passes.

Portable microdisplay system

A semiconductor device includes a substrate having a first major surface; a semiconductor device structure over the first surface of the substrate, the device structure comprising an n-type semiconductor layer, and a p-type semiconductor layer over the n-type semiconductor layer; a p-side electrode having a first and a second surface, wherein the first surface is in electrical contact with the p-type semiconductor layer; and a p-side bonding pad over the p-side electrode. Preferably, the semiconductor device further comprises an n-side bonding pad over an n-type semiconductor layer. The p-side and n-side bonding pads each independently includes a gold layer as its top layer and a single or multiple layers of a diffusion barrier under the top gold layer. Optionally, one or more metal layers are further included under the diffusion barrier. Typically, the p-side bonding pad is formed on the p-side electrode. The n-side bonding pad typically is formed on the n-type semiconductor layer, and forms a good ohmic contact with the n-type semiconductor layer.

Bonding pad for gallium nitride-based light-emitting devices

A bonding pad for an electrode is in contact with p-type gallium nitride-based semiconductor material that includes aluminum. The bonding pad may also includes one or more metals selected from the group consisting of palladium, platinum, nickel and gold. The bonding pad can be used to attach a bonding wire to the p-electrode in a semiconductor device, such as a light-emitting diode or a laser diode without causing degradation of the light-transmission and ohmic properties of the electrode. The bonding pad may be formed of substantially the same material as an electrode in making an ohmic contact with n-type gallium nitride-based semiconductor material (n-electrode). This allows the bonding pad and the n-electrode to be formed simultaneously when manufacturing a gallium nitride-based light-emitting device which substantially reduces the cost to manufacture the device.

Bonding pad for gallium nitride-based light-emitting device

An optoelectronic device such as an LED or laser which produces spontaneous emission by recombination of carriers (electrons and holes) trapped in Quantum Confinement Regions formed by transverse thickness variations in Quantum Well layers of group III nitrides.

Efficient light emitting diodes and lasers

A semiconductor device includes: a substrate; an n-type semiconductor layer over the substrate, the n-type semiconductor layer having a planar top surface; a p-type semiconductor layer extending over a major portion of the n-type semiconductor layer and not extending over an exposed region of the n-type semiconductor layer located adjacent to at least one edge of the planar top surface of the n-type semiconductor layer; a first bonding pad provided on the exposed region of the n-type semiconductor layer; an electrode layer extending over the p-type semiconductor layer; and a second bonding pad on the electrode layer, the bonding pad including a central region for securing an electrical interconnect, and at least one finger-like region protruding from the central region, the finger-like region having a length extending away from the central region and a width that is substantially less than the length. A method for producing a semiconductor device also is described.

Light-emitting diode device geometry

An improved electrode for a p-type gallium nitride based semiconductor material is disclosed that includes a layer of an oxidized metal and a first and a second layer of a metallic material. The electrode is formed by depositing three or more metallic layers over the p-type semiconductor layer such that at least one metallic layer is in contact with the p-type semiconductor layer. At least two of the metallic layers are then subjected to an annealing treatment in the presence of oxygen to oxidize at least one of the metallic layers to form a metal oxide. The electrodes provide good ohmic contacts to p-type gallium nitride-based semiconductor materials and, thus, lower the operating voltage of gallium nitride-based semiconductor devices.

Electrode for p-type gallium nitride-based semiconductors

The invention relates to a microdisplay system that utilizes a small high resolution active matrix liquid crystal display with an illumination system and a magnifying optical system to provide a viewfinder in a electronic image record system such as a digital camera or video camera. The matrix display can be transmissive or reflective using sequential lighting. The system can use an alternating common voltage which allows reduced power consumption. In addition an internal heating system in the display allows the system to be used at low temperatures.

Color display system for a camera

Growing community of inventors

Brookline, MA, United States of America

John C C Fan